Untitled
Abstract: No abstract text available
Text: C3 WMS256K16-XXX WHITE MICROELECTRONICS 256KX16 M O NO LITHIC SRAM FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging • 44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Ratpack (Package 208) ■ Organized as256Kx16
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WMS256K16-XXX
256KX16
MIL-STD-883
as256Kx16
l/Cte-16
Ao-17
256K16
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Untitled
Abstract: No abstract text available
Text: 128Kx 32 EEPROM Module mosaic PUMA67E4001/A-12/15/17/20 Issue4.2 : June 1996 semiconductor, inc. Description 4,194,304bitCMOS EEPROM Module ThePUMA67E4001/Aisa4MbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of 120,150,170and200nsareavailable.The
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128Kx
PUMA67E4001/A-12/15/17/20
304bitCMOS
ThePUMA67E4001/Aisa4MbitCMOS
170and200nsareavailable
100years.
PUMA67E4001/A-15/17/20
67E4001AMB-15E
MIL-STD-883
128Kx32
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Untitled
Abstract: No abstract text available
Text: ^E D I EDI8F16256C Bvctronic D«algnt inc.— High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs inj-ieaded (SOJ) chip carriers surface-mounted onto
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EDI8F16256C
256Kx16
EDI8F16256C
4096K-bit
256Kx4
intoa256Kx16
512Kx8or1024Kx4
1024Kx4
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Untitled
Abstract: No abstract text available
Text: m D EDI8F16256C \ Electronic D *signs In c.* High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMsinj-leaded(SOJ) chip carriers surface-mounted onto
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EDI8F16256C
256Kx16
EDI8F16256C
4096K-bit
256Kx4
512Kx8or1024Kx4
A0-A17_
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