Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    24N60AU1 Search Results

    SF Impression Pixel

    24N60AU1 Price and Stock

    IXYS Corporation IXGH24N60AU1

    IGBT 600V 48A 150W TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH24N60AU1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXSH24N60AU1

    IGBT 600V 48A 150W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSH24N60AU1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    24N60AU1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G20N60

    Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
    Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48


    Original     		PDF 24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1S IXGH24N60AU1 G20N60 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247

    24N60AU1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode VCES IXSH 24N60U1 IXSH 24N60AU1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES V CGR T J = 25°C to 150°C600 T J = 25°C to 150°C; R GE = 1 MW V 600 V V GES V GEM Continuous Transient ±20 ±30 V V I C25


    Original     		PDF 24N60U1 24N60AU1 O-247 24N60AU1

    24n60au1

    Abstract: 24N60U1 24n60 TO-247 weight C600 igbt 24n60au1 24N60U
    Text: HiPerFASTTM IGBT with Diode VCES IXSH 24N60U1 IXSH 24N60AU1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES V CGR T J = 25°C to 150°C600 T J = 25°C to 150°C; R GE = 1 MW V 600 V V GES V GEM Continuous Transient ±20 ±30 V V I C25


    Original     		PDF 24N60U1 24N60AU1 O-247 24n60au1 24N60U1 24n60 TO-247 weight C600 igbt 24n60au1 24N60U

    24N60AU1

    Abstract: NS525
    Text: HiPerFASTTM IGBT with Diode IXSH 24N60AU1 Combi Pack VCES IC25 VCE sat tfi = = = = 600 V 48 A 2.7 V 275 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V


    Original     		PDF 24N60AU1 O-247 150tching 24N60AU1 NS525

    24N60A

    Abstract: 24N60AU1
    Text: HiPerFASTTM IGBT IXGH 24N60A VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 48 A I C90 TC = 90°C 24


    Original     		PDF 24N60A O-247 24N60A 24N60AU1

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    b1113

    Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
    Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2


    Original     		PDF PLUS247 247TM O-247 O-264 O-268 16N60U1 24N60U1 30N60U1 62N60U1 24N60AU1 b1113 diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14

    931 diode smd

    Abstract: g20n60
    Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient


    OCR Scan     		PDF 24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1 IXGH24N60AU1S 4bflb22t. 931 diode smd g20n60

    6008B

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 24N60AU1 Symbol Test Conditions Maximum Ratings V C ES T j = 2 5 °C to 1 5 0 °C 600 V V CGR T,J = 25° C to 150° C; RCat„ = 1 MQ 600 V V t ges Continuous +20 V V GEM Transient t30 V ^C 25 Tc -2 5 C 48 A ^C90 T c = 9 0 3C


    OCR Scan     		PDF 24N60AU1 6008B

    smd diode JC 0p

    Abstract: DIODE SMD GEM IXGH24N60AU1S
    Text: Hi Per FAST IGBT with Diode IXGH 24N60AU1 24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600


    OCR Scan     		PDF 24N60AU1 IXGH24N60AU1S O-247 24N60AU1S) 24N60AU1S D94006DE, smd diode JC 0p DIODE SMD GEM IXGH24N60AU1S

    24N60AU

    Abstract: ixsh24n60au1 24n60au1 TO-247 weight
    Text: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V


    OCR Scan     		PDF 24N60U1 24N60AU1 IXSH24N60AU1 1999IXYS 24N60AU ixsh24n60au1 TO-247 weight

    Untitled

    Abstract: No abstract text available
    Text: DIXYS T r t" \ » HiPerFAST IGBT with Diode IXSH 24N60AU1 IXSH 24N60AU1S v CES ^C25 v ¥ CE sat Combi Pack tfi 600 V 48 A 2.7 V 275 ns oc G P relim inary data Symbol Test Conditions VCES Tj VCGR T.J = 25°C to 1 50°C;5 RrF = Cat = Maximum Ratings 25°C to 150°C


    OCR Scan     		PDF 24N60AU1 24N60AU1S O-247 24N60AU1S) 24N60AU1)

    IXSH24N60A

    Abstract: No abstract text available
    Text: □ IXYS HiPerFAST IGBT with Diode / IXSH24N60U1S IXSH24N60U1 24N60AU1 / 24N60AU1S V CES ^C25 V C E sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V v CGR T d = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF IXSH24N60U1S IXSH24N60U1 IXSH24N60AU1 IXSH24N60AU1S 24N60U1 24N60AU1 24N60U1S 24N60AU1S IXSH24N60A

    Untitled

    Abstract: No abstract text available
    Text: PIXYS 1 HiPerFAST IGBT V CES IXGH 24N60A ^C25 V v CE sat tfi 600 V 48 A 2.7 V 275 ns « Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Td = 25 °C to 150°C; RQE = 1 M£2 600 V v GES Continuous ±20 V V GEM Transient ±30 V ^ C25 Tc = 25 °C


    OCR Scan     		PDF 24N60A 24N60A 24N60AU1 4bflb22b

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    SMD diode b24

    Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
    Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64


    OCR Scan     		PDF 12N100 O-220 O-263 O-247 O-247 T0-204 30N30/. 40N30/. 31N60 SMD diode b24 diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode

    Untitled

    Abstract: No abstract text available
    Text: HiPerFAST IGBT IXSH 24N60 IXSH 24N60A VC E S ^C25 V CE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability G_ Sym bol Test Conditions Maximum Ratings V ces Tj = 25°C to 15 0CC 6 00 V v CGR T j = 25°C to 150°C; R GE = 1 M Q 600 V v GES


    OCR Scan     		PDF 24N60 24N60A O-247 24N60U1 24N60AU1

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


    OCR Scan     		PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B

    IXGA24N60A

    Abstract: No abstract text available
    Text: DIXYS IXGA 24N60A IXGH 24N60A HiPerFAST IGBT = = = = CES C25 v ¥ CE sat tfi 600 V 48 A 2.7 V 275 ns Preliminary data Maximum Ratings Symbol Test Conditions v’ c e s ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 M£2 600 V v* GES Continuous


    OCR Scan     		PDF 24N60A 24N60A O-263 O-247 24N60AU1 D94006DE, IXGA24N60A

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS V CES HiPerFAST IGBT 600 V 600 V IXSH 24N60 IXSH 24N60A V C25 CE sat 48 A 2.2 V 48 A 2.7 V Short Circuit SOA Capability G_ Maximum Ratings Sym bol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V


    OCR Scan     		PDF 24N60 24N60A Collect4N60A 24N60 24N60A 24N60U1 24N60AU1

    Untitled

    Abstract: No abstract text available
    Text: nixYS HiPerFAST IGBT IXGA 24N60A IXGH 24N60A = = = = CES ^C25 vv CE sat t 600 V 48 A 2.7 V 275 ns P relim inary data Symbol Test Conditions vCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M il 600 V vt g e s vGEM Continuous ±20 V Transient


    OCR Scan     		PDF 24N60A flb22b 24N60A 24N60AU1 D94006DE,