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    Si4493DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si4493DY 12-Jun-03 PDF

    QG-57

    Abstract: Si4493DY
    Text: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si4493DY S-52525Rev. 12-Dec-05 QG-57 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Si7658ADP

    Abstract: Si7658ADP-T1-GE3 Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 SI7658A C2320
    Text: Specification Comparison Vishay Siliconix Si7658ADP vs. Si7658DP Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET PowerPAK SO-8 Identical Part Number Replacements: Si7658ADP-T1-GE3 replaces Si7658DP-T1-GE3 Si7658ADP-T1-GE3 replaces Si7658DP-T1-E3


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    Si7658ADP Si7658DP Si7658ADP-T1-GE3 Si7658DP-T1-GE3 Si7658DP-T1-E3 16-Jul-09 SI7658A C2320 PDF

    Si4493DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si4493DY 18-Jul-08 PDF

    DG9431

    Abstract: DG9431DV DG9431DY HP4192A
    Text: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max


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    DG9431 200-pA S-63598--Rev. 26-Jul-99 HP4192A DG9431 DG9431DV DG9431DY HP4192A PDF

    DG9232

    Abstract: DG9232DQ DG9232DY DG9233 DG9233DQ DG9233DY HP4192A
    Text: DG9232/9233 Vishay Siliconix Low-Voltage Dual SPST Analog Switch FEATURES D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC


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    DG9232/9233 200-pA S-63599--Rev. 26-Jul-99 HP4192A DG9232 DG9232DQ DG9232DY DG9233 DG9233DQ DG9233DY HP4192A PDF

    Untitled

    Abstract: No abstract text available
    Text: DG9232/9233 Vishay Siliconix Low-Voltage Dual SPST Analog Switch FEATURES D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC


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    DG9232/9233 200-pA DG9232/9233 S-63599--Rev. 26-Jul-99 HP4192A PDF

    DG9431

    Abstract: DG9431DV DG9431DY HP4192A
    Text: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max


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    DG9431 200-pA S-63598--Rev. 26-Jul-99 HP4192A DG9431 DG9431DV DG9431DY HP4192A PDF

    Untitled

    Abstract: No abstract text available
    Text: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max


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    DG9431 200-pA S-63598â 26-Jul-99 HP4192A PDF

    Si488DY

    Abstract: schematic diagram 12v 48v dc buck boost convert schematic diagram 12v - 48v dc buck boost convert PCIM 177 SI9118 48V to 12V buck boost transformer RMS-26 schematic diagram dc-dc flyback converter 1545CT 2N4401
    Text: Presented at PCIM Conference, May 14-16, 2002, Nuremburg, Germany POINT OF LOAD CONVERTERS - The Topologies, Converters, and Switching Devices Required for Efficient Conversion Jess Brown, Vishay Siliconix, UK e -mail: jess.brown@vishay.com Abstract Point of load POL or point of use (POU)


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    Si9118/9 AN724, com/docs/70824/70824 com/docs/70875/70875 Si488DY schematic diagram 12v 48v dc buck boost convert schematic diagram 12v - 48v dc buck boost convert PCIM 177 SI9118 48V to 12V buck boost transformer RMS-26 schematic diagram dc-dc flyback converter 1545CT 2N4401 PDF

    DG9232

    Abstract: DG9232DQ DG9232DY DG9233 DG9233DQ DG9233DY HP4192A
    Text: DG9232/9233 Vishay Siliconix Low-Voltage Dual SPST Analog Switch FEATURES D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC


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    DG9232/9233 200-pA S-05298--Rev. 17-Dec-01 HP4192A DG9232 DG9232DQ DG9232DY DG9233 DG9233DQ DG9233DY HP4192A PDF

    Si6963DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S Rated MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si6963DQ 28-Mar-03 PDF

    DG9431

    Abstract: DG9431DV-T1 DG9431DY-T1 HP4192A
    Text: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS D Low Voltage Operation +2.7 Available to +5 V D Low On-Resistance - rDS(on): 20 W D Fast Switching - tON : 35 ns, tOFF: 20 ns D Low Leakage - ICOM(on): 200-pA max D Low Charge Injection - QINJ: 1 pC


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    DG9431 200-pA HP4192A S-50694--Rev. 18-Apr-05 DG9431 DG9431DV-T1 DG9431DY-T1 HP4192A PDF

    Untitled

    Abstract: No abstract text available
    Text: DG9232/9233 Siliconix Low Voltage Dual SPST Analog Switch New Product FEATURES D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC


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    DG9232/9233 200-pA DG9232/9233 S-53751--Rev. 28-Jan-99 HP4192A PDF

    MOSFET 200v 20A n.channel

    Abstract: SUM27N20-78 72285
    Text: SPICE Device Model SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUM27N20-78 0-to-10V 15-May-03 MOSFET 200v 20A n.channel SUM27N20-78 72285 PDF

    SUM27N20-78

    Abstract: No abstract text available
    Text: SPICE Device Model SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUM27N20-78 S-60541Rev. 10-Apr-06 SUM27N20-78 PDF

    DG9232

    Abstract: DG9232DY DG9232DY-E3 DG9232DY-T1-E3 DG9233 DG9233DY
    Text: DG9232/9233 Vishay Siliconix Low-Voltage Dual SPST Analog Switch DESCRIPTION FEATURES The DG9232/9233 is a single-pole/single-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed tON: 35 ns, tOFF: 20 ns , low on-resistance (rDS(on):


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    DG9232/9233 DG9232/9233 BCD-15 DG9232/9233. 08-Apr-05 DG9232 DG9232DY DG9232DY-E3 DG9232DY-T1-E3 DG9233 DG9233DY PDF

    DG9431

    Abstract: DG9431DV-T1 DG9431DY-T1 HP4192A
    Text: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG9431 is a single-pole/double-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed tON: 35 ns, tOFF: 20 ns , low on-resistance (rDS(on): 20 Ω)


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    DG9431 DG9431 BCD-15 DG9431. 08-Apr-05 DG9431DV-T1 DG9431DY-T1 HP4192A PDF

    DG9431DV-T1

    Abstract: 71009 DG9431 DG9431DY-T1 HP4192A DG9431DV-T1-E3
    Text: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG9431 is a single-pole/double-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed tON: 35 ns, tOFF: 20 ns , low on-resistance (rDS(on): 20 Ω)


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    DG9431 DG9431 BCD-15 DG9431. 18-Jul-08 DG9431DV-T1 71009 DG9431DY-T1 HP4192A DG9431DV-T1-E3 PDF

    DG9431

    Abstract: DG9431DV-T1 DG9431DY-T1 HP4192A v08 marking
    Text: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS D Low Voltage Operation +2.7 Available to +5 V D Low On-Resistance - rDS(on): 20 W D Fast Switching - tON : 35 ns, tOFF: 20 ns D Low Leakage - ICOM(on): 200-pA max D Low Charge Injection - QINJ: 1 pC


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    DG9431 200-pA 08-Apr-05 DG9431 DG9431DV-T1 DG9431DY-T1 HP4192A v08 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR408DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


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    SiR408DP 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHA22N60EL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) typ. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.171 74 Qgs (nC) 15 Qgd (nC) 15 Configuration Single Reduced figure-of-merit (FOM) Ron x Qg


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    SiHA22N60EL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60EL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) typ. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.171 74 Qgs (nC) 15 Qgd (nC) 15 Configuration Single Reduced figure-of-merit (FOM) Ron x Qg


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    SiHB22N60EL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF