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    Vishay Siliconix SI4493DY-T1-E3

    MOSFET P-CH 20V 10A 8SO
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    DigiKey SI4493DY-T1-E3 Reel 2,500
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    SI4493DY Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4493DY Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si4493DY SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI4493DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 10A 8SOIC Original PDF
    SI4493DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 10A 8SOIC Original PDF

    SI4493DY Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch


    Original     		PDF Si4493DY Si4493DY-T1 Si4493DY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4493DY 2002/95/EC Si4493DY-T1-E3 Si4493DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4493DY-T1

    Abstract: Si4493DY-T1-E3 Si4493DY
    Text: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch


    Original     		PDF Si4493DY Si4493DY-T1 Si4493DY-T1-E3 S-61005-Rev. 12-Jun-06

    Untitled

    Abstract: No abstract text available
    Text: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch


    Original     		PDF Si4493DY Si4493DY-T1 Si4493DY-T1-E3 18-Jul-08

    Si4493DY

    Abstract: Si4493DY-T1 S3142
    Text: Si4493DY New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.00775 @ VGS = - 4.5 V - 14 0.01225 @ VGS = - 2.5 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Load Switch - 20 S SO-8 S 1 8 D S 2 7


    Original     		PDF Si4493DY Si4493DY-T1 S-31420--Rev. 07-Jul-03 S3142

    Si4493DY

    Abstract: Si4493DY-T1-E3
    Text: Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4493DY 2002/95/EC Si4493DY-T1-E3 Si4493DY-T1-GE3 18-Jul-08

    Si4493DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4493DY 12-Jun-03

    on 5295 transistor

    Abstract: on 5295 AN609 Si4493DY 1.0722
    Text: Si4493DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4493DY AN609 19-Mar-07 on 5295 transistor on 5295 1.0722

    Si4493DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4493DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4493DY 2002/95/EC Si4493DY-T1-E3 Si4493DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    QG-57

    Abstract: Si4493DY
    Text: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4493DY S-52525Rev. 12-Dec-05 QG-57

    Untitled

    Abstract: No abstract text available
    Text: Si4493DY New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.00775 @ VGS = - 4.5 V - 14 0.01225 @ VGS = - 2.5 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Load Switch - 20 S SO-8 S 1 8 D S 2 7


    Original     		PDF Si4493DY Si4493DY-T1 08-Apr-05