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    SI6963DQ Search Results

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    SI6963DQ Price and Stock

    Rochester Electronics LLC SI6963DQ

    MOSFET 2P-CH 20V 3.8A 8TSSOP
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    DigiKey SI6963DQ Bulk 1,211
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    Fairchild Semiconductor Corporation SI6963DQ

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    Bristol Electronics SI6963DQ 92 4
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    Quest Components SI6963DQ 8,104
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    SI6963DQ 73
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    Rochester Electronics SI6963DQ 5,538 1
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    Vishay Intertechnologies SI6963DQ-T1

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    Bristol Electronics SI6963DQ-T1 402
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    SI6963DQ-T1 3,000
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    Quest Components SI6963DQ-T1 2,400
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    Vishay Siliconix SI6963DQ-T1

    MOSFET Transistor, Matched Pair, P-Channel, TSSOP
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    Quest Components SI6963DQ-T1 3,649
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    SI6963DQ-T1 1,704
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    sili SI6963DQT1

    DUAL P-CHANNEL 2.5-V (G-S) MOSFET Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI6963DQT1 3,600
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    SI6963DQ Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI6963DQ Fairchild Semiconductor Dual P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si6963DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si6963DQ Vishay Intertechnology Dual P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si6963DQ SPICE Device Model Vishay Dual P-Channel 2.5-V (G-S) Rated MOSFET Original PDF
    SI6963DQ-T1 Vishay Intertechnology Dual P-Channel 2.5-V (G-S) MOSFET Original PDF

    SI6963DQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si6963DQ

    Abstract: No abstract text available
    Text: Si6963DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D Si6963DQ 8 7 6 5 G1 D2 S2 S2 G2 G2 Top View D1 D2 P-Channel MOSFET


    Original
    PDF Si6963DQ S-53246--Rev. 26-May-97

    DIODE marking S4 97

    Abstract: No abstract text available
    Text: Si6963DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original
    PDF Si6963DQ DIODE marking S4 97

    Si6963DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S Rated MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si6963DQ 28-Mar-03

    Si6963DQ

    Abstract: No abstract text available
    Text: Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6963DQ G1 G2 6 S2 5 G2 Top View D1 D2 P-Channel MOSFET


    Original
    PDF Si6963DQ 18-Jul-08

    Si6963DQ

    Abstract: No abstract text available
    Text: Si6963DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original
    PDF Si6963DQ

    BUSS SR-5 T3.15A 250V

    Abstract: Si6963BDQ Si6963BDQ-T1-E3 Si6963DQ Si6963DQ-T1
    Text: Specification Comparison Vishay Siliconix Si6963BDQ vs. Si6963DQ Description: Dual P-Channel, 2.5 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6963BDQ-T1 Replaces Si6963DQ-T1 Si6963BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6963DQ-T1-E3 (Lead (Pb)-free version)


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    PDF Si6963BDQ Si6963DQ Si6963BDQ-T1 Si6963DQ-T1 Si6963BDQ-T1-E3 Si6963DQ-T1-E3 10-Nov-06 BUSS SR-5 T3.15A 250V

    Si6963DQ

    Abstract: No abstract text available
    Text: Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6963DQ G1 G2 6 S2 5 G2 Top View D1 D2 P-Channel MOSFET


    Original
    PDF Si6963DQ S-03108--Rev. 12-Feb-01

    A1818

    Abstract: No abstract text available
    Text: Si6963DQ New Product Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V - 3.5 0.085 @ VGS = - 2.5 V - 2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 G1 8 D2 7 S2 D Si6963DQ G2 6 S2 5 G2 Top View


    Original
    PDF Si6963DQ 08-Apr-05 A1818

    Si6963DQ

    Abstract: No abstract text available
    Text: Si6963DQ New Product Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V - 3.5 0.085 @ VGS = - 2.5 V - 2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 G1 8 D2 7 S2 D Si6963DQ G2 6 S2 5 G2 Top View


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    PDF Si6963DQ 18-Jul-08

    Dual P-Channel 2.5-V (G-S) MOSFET

    Abstract: MOSFET TSSOP-8 Si6963DQ
    Text: Si6963DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.2 0.10 @ VGS = –2.5 V "2.4 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D Si6963DQ 8 7 6 5 G1 D2 S2 S2 G2 G2 Top View D1 D2 P-Channel MOSFET


    Original
    PDF Si6963DQ 51242--Rev. 18-Dec-96 Dual P-Channel 2.5-V (G-S) MOSFET MOSFET TSSOP-8

    Si6963DQ

    Abstract: No abstract text available
    Text: Si6963DQ New Product Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V - 3.5 0.085 @ VGS = - 2.5 V - 2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 G1 8 D2 7 S2 D Si6963DQ G2 6 S2 5 G2 Top View


    Original
    PDF Si6963DQ S-20220--Rev. 01-Apr-02

    Untitled

    Abstract: No abstract text available
    Text: Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6963DQ G1 G2 6 S2 5 G2 Top View D1 D2 P-Channel MOSFET


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    PDF Si6963DQ 08-Apr-05

    diode 8a 600v

    Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
    Text: Fairchild New Product Highlights, #1, August 2001 Interface & Logic Optoelectronics Fairchild New Product Highlights Analog Discrete Power Switch for off-line power supply See page 2 The Latest Fairchild Innovations Contents Comprehensive New Product List


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    PDF Power247TM, diode 8a 600v 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


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    PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


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    PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


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    PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    Untitled

    Abstract: No abstract text available
    Text: T e m ic Si6963DQ Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) Id (A) ±3.5 ±2.7 rDS(on) (£2) 0.050 @ VGs = -4.5 V 0.085 @ VGs = -2.5 V 20 Si S2 o p 6 6 P-Channel MOSFET P-Channel MOSFET TSSOP-8 Si6963DQ Top View Di D2


    OCR Scan
    PDF Si6963DQ 25Source S-53246â 26-May-97