T 9722
Abstract: Diode T 9722 EDI8G322048C
Text: EDI8G322048C 2048Kx32 SRAM Module 2048Kx32 Static RAM CMOS, High Speed Module Features 2048Kx32 bit CMOS Static Random Access Memory • Access Times: 20, 25, and 35ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package
|
Original
|
PDF
|
EDI8G322048C
2048Kx32
01581USA
EDI8G322048C
T 9722
Diode T 9722
|
bq4017
Abstract: bq4017Y
Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable
|
Original
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
36-Pin
bq4017
bq4017Y
|
Untitled
Abstract: No abstract text available
Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable
|
Original
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
|
Untitled
Abstract: No abstract text available
Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable
|
Original
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
|
bq4017
Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable
|
Original
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
BQ4017MC-70
bq4017Y
BQ4017YMC-70
|
bq4017
Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable
|
Original
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
BQ4017MC-70
bq4017Y
BQ4017YMC-70
|
Untitled
Abstract: No abstract text available
Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable
|
Original
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
|
Untitled
Abstract: No abstract text available
Text: Not Recommended for new Designs bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable
|
Original
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
|
bq4017
Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable
|
Original
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
BQ4017MC-70
bq4017Y
BQ4017YMC-70
|
Untitled
Abstract: No abstract text available
Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable
|
Original
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
|
bq4017
Abstract: bq4017Y
Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited
|
Original
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
bq4017Y
|
Untitled
Abstract: No abstract text available
Text: Not Recommended for new Designs bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable
|
Original
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
|
bq4017
Abstract: bq4017Y
Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable
|
Original
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
bq4017Y
|
Untitled
Abstract: No abstract text available
Text: ^EDI EDI8G322048C 2048KX32 SRAM Module ELECTRONIC DESIGNS, INC 2048KX32 Static RAM CMOS, High Speed Module Features The EDI8G 322048C is a high speed 64 m egabit Static 2048Kx32 bit CMOS Static RAM m odule organized as 2048K w ords by 32 bits. This Random Access Memory
|
OCR Scan
|
PDF
|
EDI8G322048C
2048KX32
322048C
2048K
1024Kx4
|
|
Untitled
Abstract: No abstract text available
Text: h bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte g ral control c ircu itry and lith iu m
|
OCR Scan
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
bq4017
2048K
|
Untitled
Abstract: No abstract text available
Text: ^E D I _ EDI8F82048C Electronic Dvtions Inc. Commercial Sixteen Megabit SRAM Module 16 Megabit 2Megx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 Megabit CMOS Static RAM 2048Kx8 bit CMOS Static based on sixteen 128Kx8 Static RAMs mounted on a multi- Random Access Memory
|
OCR Scan
|
PDF
|
EDI8F82048C
EDI8F82048C
2048Kx8
128Kx8
150ns
EDI8F82048LP)
EDI8F82048C70BSC
EDI8F82048C85BSC
|
Untitled
Abstract: No abstract text available
Text: m o EDI8G322048C i 2043Kx32 SRAMModtÉe ElfC TB O N C D O C N SN C . 2048Kx32Static RAM CMOS> High SpeedModule Features The EDI8G322048C is a high speed 64 megabit Static 2048Kx32 bit CMOS Static RAM module organized as 2048K words by 32 bits. This Random Access Memory
|
OCR Scan
|
PDF
|
EDI8G322048C
2043Kx32
2048Kx32Static
EDI8G322048C
2048Kx32
2048K
1024Kx4
EDI8G322M8C
EDI8G322048C20MMC
EDI8G322048C25MMC
|
Untitled
Abstract: No abstract text available
Text: bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte gral control circuitry and lithium
|
OCR Scan
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
bq4017
2048K
0003b11
|
Untitled
Abstract: No abstract text available
Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description >• D a ta re te n tio n in th e absence of pow er T h e CM OS bq4017 is a n o n v o latile 16,777,216-bit sta tic RAM org an ized a s 2,09 7 ,1 5 2 w o rd s b y 8 b its. T h e in te g r a l c o n tro l c irc u itry a n d l it h
|
OCR Scan
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
|
A18E
Abstract: A18E 40
Text: bq4017/bq4017Y U IM IT R O O E - 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lith
|
OCR Scan
|
PDF
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
bq4017
2048K
A18E
A18E 40
|
D1581
Abstract: OQ10 EDI8G322048C
Text: ^EDI EDI8G322048C 2048KX32 SRAM Module ELECTRONIC DESIGNS, INC 2048KX32 Static RAM CMOS, High Speed Module Features The EDI8G322048C is a high speed 64 m egabit Static 2048Kx32 bit CMOS Static RAM m odule organized as 2048K w ords by 32 bits. This Random Access Memory
|
OCR Scan
|
PDF
|
EDI8G322048C
2048KX32
EDI8G322048C20MMC
EDI8G322048C25MMC
EDI8G322048C35MMC
I8G322048C
D1581
OQ10
EDI8G322048C
|
IC 4017 B
Abstract: No abstract text available
Text: bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 w ords by 8 b its. The in te g ral control circu itry an d lith
|
OCR Scan
|
PDF
|
4017Y
2048Kx8
bq4017
216-bit
bq4017/bq4017Y
2048K
IC 4017 B
|
Untitled
Abstract: No abstract text available
Text: CYM1471 CYM1481 'is CYPRESS 1024KX 8 SRAM Module 2048KX 8 SRAM Module SEMICONDUCTOR Features Functional Description • High-density 8-/16-megabit SRAM modules T h e CYM 1471 an d CYM1481 are highp erform ance 8 -m egabit and 16-megabit static R A M m odules organized as 1024K
|
OCR Scan
|
PDF
|
CYM1471
CYM1481
8-/16-megabit
CYM1460/CYM1461
1024KX
2048KX
-120C
1471L
PF--120C
1471PS--120C
|
Untitled
Abstract: No abstract text available
Text: CYM1471 CYM1481 CYPRESS SEMICONDUCTOR 1024K x 8 SRAM Module 2048Kx 8 SRAM Module Features F unctional D escription • High-density 8-/16-megabit SRAM modules T he CYM1471 an d CYM 1481 are highperform ance 8-m egabit and 16-megabit static R A M m odules organized as 1024K
|
OCR Scan
|
PDF
|
CYM1471
CYM1481
1024K
2048Kx
8-/16-megabit
CYM1471
16-megabit
1024K
2048K
1471L
|