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    bq4017

    Abstract: bq4017Y
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


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    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit 36-Pin bq4017 bq4017Y

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    Abstract: No abstract text available
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


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    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


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    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit

    bq4017

    Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


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    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit BQ4017MC-70 bq4017Y BQ4017YMC-70

    bq4017

    Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


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    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit BQ4017MC-70 bq4017Y BQ4017YMC-70

    Untitled

    Abstract: No abstract text available
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


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    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for new Designs bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original
    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit

    bq4017

    Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original
    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit BQ4017MC-70 bq4017Y BQ4017YMC-70

    Untitled

    Abstract: No abstract text available
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original
    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit

    bq4017

    Abstract: bq4017Y
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited


    Original
    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017Y

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for new Designs bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original
    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit

    bq4017

    Abstract: bq4017Y
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original
    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017Y

    bq4017

    Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
    Text: Not Recommended for new Designs bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original
    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit BQ4017MC-70 bq4017Y BQ4017YMC-70

    Untitled

    Abstract: No abstract text available
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original
    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for new Designs bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


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    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit

    Untitled

    Abstract: No abstract text available
    Text: LY62102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.3 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION


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    PDF LY62102616 1024K 48-pin

    xxxxxxxxx

    Abstract: No abstract text available
    Text: LY62L102616A Rev. 1.1 16M Bits 2Mx8 / 1Mx16 Switchable LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Correct typo error on the column “UB#”, “LB#” of truth table for row “Byte Read” “Byte Write” and “Output Disable” at


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    PDF LY62L102616A 1Mx16 LY62L102616ALL-55SLT LY62L102616ALL-55SL LY62L102616ALL-70SLIT xxxxxxxxx

    Untitled

    Abstract: No abstract text available
    Text: Preliminary bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte­ gral control circuitry and lithium


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    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017 2048K

    Untitled

    Abstract: No abstract text available
    Text: h bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte­ g ral control c ircu itry and lith iu m


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    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017 2048K

    Untitled

    Abstract: No abstract text available
    Text: ^E D I _ EDI8F82048C Electronic Dvtions Inc. Commercial Sixteen Megabit SRAM Module 16 Megabit 2Megx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 Megabit CMOS Static RAM 2048Kx8 bit CMOS Static based on sixteen 128Kx8 Static RAMs mounted on a multi- Random Access Memory


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    PDF EDI8F82048C EDI8F82048C 2048Kx8 128Kx8 150ns EDI8F82048LP) EDI8F82048C70BSC EDI8F82048C85BSC

    Untitled

    Abstract: No abstract text available
    Text: bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte­ gral control circuitry and lithium


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    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017 2048K 0003b11

    Untitled

    Abstract: No abstract text available
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description >• D a ta re te n tio n in th e absence of pow er T h e CM OS bq4017 is a n o n v o latile 16,777,216-bit sta tic RAM org an ized a s 2,09 7 ,1 5 2 w o rd s b y 8 b its. T h e in te g r a l c o n tro l c irc u itry a n d l it h ­


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    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit

    A18E

    Abstract: A18E 40
    Text: bq4017/bq4017Y U IM IT R O O E - 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lith ­


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    PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017 2048K A18E A18E 40

    IC 4017 B

    Abstract: No abstract text available
    Text: bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 w ords by 8 b its. The in te g ral control circu itry an d lith ­


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    PDF 4017Y 2048Kx8 bq4017 216-bit bq4017/bq4017Y 2048K IC 4017 B