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    Fix Supply 1024KXC

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    Fix Supply 1024KXC188

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    Fix Supply 1024KXC410

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    Wall Industries Inc WMIPEM1024KX

    AC TO DC CONVERTER MODULE
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    Wall Industries Inc DTEM1024KX

    AC TO DC CONVERTER MODULE
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    1024KX Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX DUAL VOLTAGE LH28F800SUTD 8M 1024Kx8/512Kx16 3V Dual Work


    Original     		PDF LH28Fxxx LH28F800SUTD 1024Kx8/512Kx16)

    Untitled

    Abstract: No abstract text available
    Text: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited


    Original     		PDF bq4016/bq4016Y 1024Kx8 10-year bq4016 608-bit

    Untitled

    Abstract: No abstract text available
    Text: EDI8F321024C White Electronic Designs 1024Kx32 Static RAM CMOS, High Speed Module FEATURES n DESCRIPTION The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages on an epoxy


    Original     		PDF EDI8F321024C 1024Kx32 EDI8F321024C 1024K 1024Kx4 ena20MMC EDI8F321024C25MMC

    Untitled

    Abstract: No abstract text available
    Text: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited


    Original     		PDF bq4016/bq4016Y 1024Kx8 10-year bq4016 608-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited


    Original     		PDF bq4016/bq4016Y 1024Kx8 bq4016 608-bit 10-year

    EDI8F321024C

    Abstract: No abstract text available
    Text: EDI8F321024C White Electronic Designs 1024Kx32 Static RAM CMOS, High Speed Module FEATURES  DESCRIPTION The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ


    Original     		PDF EDI8F321024C 1024Kx32 EDI8F321024C 1024K 1024Kx4 175-8F321024C 176-8F321024C 356-8F321024C

    Untitled

    Abstract: No abstract text available
    Text: EDI8G321024V 1024Kx32 SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features 1024Kx32 bit CMOS Static Random Access Memory • Access Times: 12, 15, 17, and 20ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package


    Original     		PDF EDI8G321024V 1024Kx32 EDI8G321024V

    EDI8F81024C

    Abstract: EDI8F81024C100BSC EDI8F81024C70BFC EDI8F81024C70BSC EDI8F81024C85BSC
    Text: EDI8F81024C 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features 1024Kx8 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F81024LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks


    Original     		PDF EDI8F81024C 1024Kx8 100ns EDI8F81024LP) EDI8F81024C 128Kx8 01581USA EDI8F81024C100BSC EDI8F81024C70BFC EDI8F81024C70BSC EDI8F81024C85BSC

    Untitled

    Abstract: No abstract text available
    Text: EDI8F321024C Electronic Designs Inc. High Speed 32 Megabit SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 1024Kx32 bit CMOS Static Random Access Memory


    OCR Scan     		PDF EDI8F321024C 1024Kx32 EDI8F321024C 1024K 1024Kx4 EDI8F321024C35MZC EDI8F321024C45MZC 323D114

    Untitled

    Abstract: No abstract text available
    Text: WZ4KX3Ö 5KAM Module 1024Kx36 Static RAM CMOS, High Speed Module Features 1024Kx36 bit CMOS Static The EDI9G361024C is a high speed 36 megabit Static RAM Random Access Memory module organized as 1024K words by 36 bits. This module • Access Times: 17, 20 and 25


    OCR Scan     		PDF 1024Kx36 EDI9G361024C 1024K 1024Kx4 EDI9G361024C25MNC 0H07C 70C07

    Untitled

    Abstract: No abstract text available
    Text: ! j * . WPF1024K32-XPBX 1024Kx32 FLASH BALL GRID ARRAY PRELIMINARY * FEATURES • Access Times of 9 0 ,150ns ■ Organized as 1024Kx32 ■ Perimeter Ball Grid Packaging ■ Commercial and Industrial Temperature Ranges • 35mm BGA: ■ 5 Volt Power Supply, 12 V pp


    OCR Scan     		PDF WPF1024K32-XPBX 1024Kx32 150ns 1024Kx32 1024Kx8 1024K32 1024K 2048K

    Untitled

    Abstract: No abstract text available
    Text: AK5361024BWP 1,048,576 Word by 36 Bit CMOS Dynamic Random Access Memory MICEOCIECÏÏIT CORPORATION DESCRIPTION The Accutek AK5361024BWP high density memory module is a CMOS dynamic RAM organized in 1024Kx 36 bit words. The mod­ ule consists of two standard 1 Meg x 16 bits DRAMs and one 1 Meg


    OCR Scan     		PDF AK5361024BWP 1024Kx

    WF1024K32-XXX

    Abstract: sMD .v05 smd V05
    Text: c WHITE /MICROELECTRONICS a WF1024K32-XXX 1024Kx32 12V FLASH M ODULE FEATURES • 100,000 Erase/Program C ycles ■ ■ Organized as 1024Kx32 ■ Com m ercial, Industrial and M ilita ry T em peratu re Ranges ■ A c c e s s T im es of 1 0 0 ,150nS Packaging:


    OCR Scan     		PDF WF1024K32-XXX 1024Kx32 150nS 66-pin, 64KBytes each1024Kx8 1024Kx32 1024K 2048K WF1024K32-XXX sMD .v05 smd V05

    Untitled

    Abstract: No abstract text available
    Text: TT WF1024K32-XXX 11/HITE / M I C R O E L E C T R O N I C S 1024Kx32 12V FLASH MODULE PRELIMINARY* FEATURES • 12 V o lt Programming. 5V ± 10% Supply. ■ Access Times of 100,150 nS ■ Low Power CMOS, 3mA Standby Typical ■ ■ Optional Ready/Busy status pinout in CQFP


    OCR Scan     		PDF 11/HITE WF1024K32-XXX 1024Kx32 66-pin, WF1024K32-XHX WF1024K32-XG4X 1024K 150nS

    EDI8F81024C

    Abstract: OC98N a410c
    Text: ^EDI EDI8F81024C 1Mtgx8 SRAM Module ELECTRONC DESIGNS. WC 1Megx8 Static RAM CMOS, Module Features 1024Kx8 bit CMOS Static The EDI8F81024C is a 8 Megabit CMOS Static RAM based Random Access Memory on eight 128Kx8 Static RAMs mounted on a multi-layered • Access Times 70 thru 100ns


    OCR Scan     		PDF EDI8F81024C 1024Kx8 100ns EDI8F81024LP) EDI8F81024C 128Kx8 EDI8F81024C70BSC EDI8F81024C70BSI. OC98N a410c

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8G321024V 1024KX32 SRAM Module ELECTRONIC DESIGNS, IN C 1024Kx32 Static RAM CMOS, High Speed Module Features 1024Kx32 bit C M O S Static T h e E D I8 G 3 2 1 0 2 4 V is a high speed 32 m egabit Static RA M m odule organized as 1 0 2 4 K by 32 bits. This


    OCR Scan     		PDF EDI8G321024V 1024KX32 15MMC EDI8G321024V17MMC EDI8G321024V20MMC EDI8G321024V

    Untitled

    Abstract: No abstract text available
    Text: EDI8F321024C ^ E D I 11Q24KX32 SRAM Module EL£CTRüNICDE5lSN&INC 10mx32 Static RAM CHIOS, Hicfi Speed Module Features TheEDI8F321024C is a high speed 32 megabit Static RAM 1024Kx32 bit CMOS Static module organized as 1024K words by 32 bits. This module Random Access Memory


    OCR Scan     		PDF EDI8F321024C 1024Kx32 10mx32 TheEDI8F321024C 1024K 1024Kx4 f1024C 321024C20M 321024C25M 321024C35IVIN

    C4001

    Abstract: S13-146
    Text: 1 MEGABIT 1024KX 1-BIT CMOS STATIC RAM SIP MODULE PRELIMINARY IDT 7MC4001 FEATURES: DESCRIPTION: • H ig h -de n slty 1 m e g a b it (1024K x 1) C M O S sta tic RAM m odule • Surface m o un ted LCC c o m p o n e n ts m o un ted o n a co-fired c e ra m ic substrate


    OCR Scan     		PDF 1024KX 1024K 7MC4001 C4001 T71257 30-pin S13-150 IDT7MC4001 S13-146

    PN-84

    Abstract: No abstract text available
    Text: bq4016/bq4016Y BENCHMARQ 1024Kx8 Nonvolatile SRAM Features General Description > D a ta retention in the absence of power The CM O S bq4016 is a nonvolatile 8,388,608-bit sta tic RAM organized a s 1,048,576 w ords by 8 bits. The in ­ teg ra l control circuitry an d lithium


    OCR Scan     		PDF bq4016/bq4016Y 1024Kx8 bq4016 608-bit PN-84

    H31M1

    Abstract: EDI8M11024C 901ac
    Text: m o EDI8M11024C i Electronic D »*lgn i Inc. High Speed Megabit SRAM Module railDiOIMmf 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con­ structed using four 256Kx1 Static RAMs in leadlesschip


    OCR Scan     		PDF EDI8M11024C EDI8M11024C 1024Kx1 256Kx1 Z01M1 X0H31 H31M1 H31M1 901ac

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8F321024C ELECTRONIC DESIGNS INC. • High Speed 32 Megabit SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This 1024Kx32 bit CMOS Static


    OCR Scan     		PDF EDI8F321024C 1024Kx32 EDI8F321024C 1024K 1024Kx4 EDI8F321024C25MMC EDI8F321024C35MMC EDI8F321024C45MMC EDI8F321024C25MZC

    Untitled

    Abstract: No abstract text available
    Text: WS512K32-XXX M/HITE /M ICROELECTRONICS 512Kx32 SRAM MODULE PRELIMINARY* Organized as 512Kx32, U se r C o n fig u ra b le as 1024Kx16 or 2 M x8 C o m m ercial, Industrial and M ilita r y T em peratu re R anges FEATURES TTL C o m p atib le Inputs and O utputs


    OCR Scan     		PDF WS512K32-XXX 512Kx32 512Kx32, 1024Kx16 10HXX*

    Untitled

    Abstract: No abstract text available
    Text: L •V □PM Dense-Pac Microsystems, Inc. x DPZ1MS16P 1024KX 16 FLASH MEMORY MODULE O PRELIMINARY DESCRIPTION: The DPZ1M S16P is a 16 megabit CM O S FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with sixteen 128K x 8 FLASH memory devices


    OCR Scan     		PDF DPZ1MS16P 1024KX 1024K 2048K DPZ1MS16P) DPZ1MS16XP) 30A051-00 DPZ1MS16XP

    Untitled

    Abstract: No abstract text available
    Text: CYM1471 CYM1481 CYPRESS 1024KX 8 SRAM Module 2048K x 8 SRAM Module F e a tu re s F u n c tio n a l D escription • High-density 8-/l6-m egabit SRAM modules The CYM1471 and CYM1481 are highperform ance 8-megabit and 16*megabit static RAM m odules organized as 1024K


    OCR Scan     		PDF CYM1471 CYM1481 1024KX 2048K 1471PS 1471L 1471LPS--100C CYM1471PS --120C