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    ROHM Semiconductor 2SA2048KT146Q

    TRANS PNP 30V 1A SMT3
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    DigiKey 2SA2048KT146Q Digi-Reel 4,567 1
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    2SA2048KT146Q Cut Tape 4,567 1
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    2SA2048KT146Q Reel 3,000 3,000
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    API Delevan M0820-48K

    FIXED IND 10UH 91MA 5.7 OHM SMD
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    Vishay Roederstein MKP1847H52048KP4

    CAP FILM 2UF 10% 1KVDC RADIAL
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    DigiKey MKP1847H52048KP4 Bulk 91
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    Vishay Roederstein MKP1847H52048KP2

    CAP FILM 2UF 10% 1KVDC RADIAL
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    DigiKey MKP1847H52048KP2 Bulk 91
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    Maxim Integrated Products TMCS-20-4-8K-AT-01

    OPTICAL ENCODER, 8192 PULSES, 20
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    DigiKey TMCS-20-4-8K-AT-01 Box 15
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    2048K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T 9722

    Abstract: Diode T 9722 EDI8G322048C
    Text: EDI8G322048C 2048Kx32 SRAM Module 2048Kx32 Static RAM CMOS, High Speed Module Features 2048Kx32 bit CMOS Static Random Access Memory • Access Times: 20, 25, and 35ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package


    Original     		PDF EDI8G322048C 2048Kx32 01581USA EDI8G322048C T 9722 Diode T 9722

    32-PIN

    Abstract: DS1249W DS1249W-100 DS1249W-150
    Text: DS1249W 3.3V 2048kb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1249W 2048kb 100ns 32-pin DS1249W 150ns 32-PIN, DS1249W-100 DS1249W-150

    Untitled

    Abstract: No abstract text available
    Text: LY62L204916A 2048K X 16 BIT LOW POWER CMOS SRAM Rev.1.2 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Nov. 06. 2012 Rev. 1.1 Typo error on page 9, revised as 8mmx10mm. Dec.18. 2012 Rev. 1.2 1. Revise ISB1 on page 4 & IDR on page 8


    Original     		PDF LY62L204916A 2048K 8mmx10mm. SRA-55SLT LY62L204916AGL-70SLT LY62L204916AGL-70SLI LY62L204916AGL-55SL LY62L204916AGL-70SLIT

    Untitled

    Abstract: No abstract text available
    Text: EN29LV160C EN29LV160C 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3.0V, single power supply operation - Minimizes system level power requirements • High performance - Access times as fast as 70 ns


    Original     		PDF EN29LV160C 2048K 1024K 16-bit) 16-Kbyte, 32-Kbyte, 64-Kbyte 16-Kword 32-Kword

    32-PIN

    Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
    Text: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns


    Original     		PDF DS1249Y/AB 2048k DS1249Y) DS1249AB) 32-pin 32-pin, 600-mil DS1249Y/AB 740-MIL DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70

    EN39SL160

    Abstract: cFeon EN cFeon serial Flash chip 07c0
    Text: EN39SL160H/L EN39SL160H/L 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only FEATURES • - • Single power supply operation - Full voltage range:1.65-1.95 volt for read and write operations. - Ideal for battery-powered applications.


    Original     		PDF EN39SL160H/L 2048K 1024K 16-bit) 400ms EN39SL160 cFeon EN cFeon serial Flash chip 07c0

    E99151

    Abstract: DS1249W DS1249W-100 DS1249W-100IND MDT32
    Text: 19-5633; Rev 11/10 DS1249W 3.3V 2048kb Nonvolatile SRAM www.maxim-ic.com FEATURES • •       PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles


    Original     		PDF DS1249W 2048kb 100ns 32-pin MDT32 E99151 DS1249W DS1249W-100 DS1249W-100IND

    EN29LV160CT

    Abstract: EN29LV160CB en29lv160c
    Text: EN29LV160C EN29LV160C 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3.0V, single power supply operation - Minimizes system level power requirements • High performance - Access times as fast as 70 ns


    Original     		PDF EN29LV160C 2048K 1024K 16-bit) 100ms 48-Ball EN29LV160CT EN29LV160CB en29lv160c

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL 16-Mbit 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE 1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)


    Original     		PDF CY62168DV30 16-Mbit 2048K 48-ball

    IN6AG

    Abstract: 28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 28F020 2048K 32-Pin 32-LEAD P28F020-70 N28F020-70 P28F020-90 IN6AG intel 28F020

    BY324

    Abstract: No abstract text available
    Text: ACMCS034 *ACMCS034* AK5362048AWP 2,097,152 Word by 36 Bit CMOS Dynamic Random Access Memory MICROCIRCUIT CORPORATION DESCRIPTION T h e Accutek A K 5 3 6 2 0 4 8 A W P high density m em ory module is a C M O S dynamic RAM organized in 2048K x 36 bit words. The


    OCR Scan     		PDF ACMCS034 ACMCS034* 2048K BY324

    Untitled

    Abstract: No abstract text available
    Text: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		PDF 28F020 2048K AP-316 AP-325 -80V05, -80V05 28F020 4a2bl75 Qlbb077

    M28F020-20

    Abstract: MD28F020-20/B
    Text: in te l ß o n iy ß iß O A O tfr M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum


    OCR Scan     		PDF M28F020 2048K MD28F020-90 MD28F020-12 MD28F020-15 MD28F020-20 MF28F020-90 MF28F020-12 MF28F020-15 MF28F020-20 M28F020-20 MD28F020-20/B

    Untitled

    Abstract: No abstract text available
    Text: P R lO B M A IifR r ¡ n ie l M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum


    OCR Scan     		PDF M28F020 2048K MD28F020-90 MF28F020-90 MD28F020-12 MF28F020-12 MD28F020-15 MF28F020-15 MD28F020-20 MF28F020-20

    Untitled

    Abstract: No abstract text available
    Text: IßTEXAR X R -T 6 166 Codirectional Digital Data Processor FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-T6166 is a digital CM O S circuit which performs the interface function betweeh a 64kbit/s data stream and a 2048kbit/s PCM timeslot data channel. When


    OCR Scan     		PDF XR-T6166 64kbit/s 2048kbit/s XR-T6164, XR-T6166

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8G322048C 2048KX32 SRAM Module ELECTRONIC DESIGNS, INC 2048KX32 Static RAM CMOS, High Speed Module Features The EDI8G 322048C is a high speed 64 m egabit Static 2048Kx32 bit CMOS Static RAM m odule organized as 2048K w ords by 32 bits. This Random Access Memory


    OCR Scan     		PDF EDI8G322048C 2048KX32 322048C 2048K 1024Kx4

    Untitled

    Abstract: No abstract text available
    Text: DS1252Y PRELIMINARY DALLAS SEMICONDUCTOR DS1252Y 2048K NV SRAM with Phantom Clock FEATURES PIN ASSIGNMENT • Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years • 256K x 8 NV SRAM directly replaces volatile static


    OCR Scan     		PDF DS1252Y 2048K 32-pin 32-PIN

    Untitled

    Abstract: No abstract text available
    Text: Preliminary bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte­ gral control circuitry and lithium


    OCR Scan     		PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017 2048K

    Untitled

    Abstract: No abstract text available
    Text: DS1252Y PRELIMINARY DALLAS SEMICONDUCTOR DS1252Y 2048K NV SRAM with Phantom Clock FEATURES PIN ASSIGNMENT • Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years • 256K x 8 NV SRAM directly replaces volatile static


    OCR Scan     		PDF DS1252Y 2048K 32-pin 32-PIN

    Untitled

    Abstract: No abstract text available
    Text: EDI8M8256C70/100/120PC ^EDI High Performance 2 Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8256C is a 2048K bit CMOS Static RAM module. It is based on eight 32Kx8 Static RAMs in plastic VSOP packages mounted on a multi-layered ceramic


    OCR Scan     		PDF EDI8M8256C70/100/120PC 256Kx8 EDI8M8256C 2048K 32Kx8 120ns

    Untitled

    Abstract: No abstract text available
    Text: EDI8M8257C 90/100/120/150 Module The fu tu re . . . today, i ÄDWÄNKgE DIMFÛI^IMIÂTDÛINI 256Kx8 SRAM CMOS, High Speed Module Features The EDI8M8257C is a 2048K 256Kx8 bit High Speed Static RAM module constructed using two EDI88128C (128Kx8) Static RAMs In teadless chip


    OCR Scan     		PDF EDI8M8257C 256Kx8 EDI8M8257C 2048K EDI88128C 128Kx8) 128Kx8 32-pin,

    Untitled

    Abstract: No abstract text available
    Text: DPZ2MS16P □PM Dense-Pac Microsystems, Inc. O 2048K X 16 FLASH MEMORY MODULE PRELIMINARY D ESC RIPTIO N : The DPZ2M S16P is a 32 megabit C M O S FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with sixteen 256K x 8 FLASH memory devices


    OCR Scan     		PDF DPZ2MS16P 2048K 4096K S16XP) 30A052-00 DPZ2MS16XP

    EDI8M8257C

    Abstract: DDD15L
    Text: ELECTRONIC DESIGNS INC S1E D 3230114 W D Ì 00012b2 Ö7T I EL3> EDI8M8257C B«dronlc DM igro Inc.a High Speed Two Megabit SRAM Module Pfôiy1DIMIHIV 256Kx8 Static RAM CMOS;Module Features T - Y é -Z3 -/</ The EDI8M8257C is a 2048K bit CMOS Static RAM 256Kx8 bit CMOS Static


    OCR Scan     		PDF EDI8M8257C 256Kx8 EDI8M8257C 2048K 128Kx8 the128Kx8 The32 EDI8M8257LP) I8M8257LP85P6C EDI8M8257LP100P6C DDD15L

    1024K

    Abstract: No abstract text available
    Text: Dense-Pac M icrosystem s, Inc. DPS1MS16P 1024K X 16 CMOS SRAM MODULE O DESCRIPTION: The DPS1MS16P is a 16 megabit, low-power static RAM module. The module is comprised o f sixteen 128K X 8 SRAM devices and tw o high-speed decoders. The DPS1MS16P can be user configurable as 1024K X 16 o r as 2048K X 8 bits.


    OCR Scan     		PDF DPS1MS16P 1024K DPS1MS16P 2048K DPS1MS16XP) DPS1MS16XP thePS1MS16P