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    Samsung Electro-Mechanics CL21X106KOQNNNE

    CAP CER 10UF 16V X6S 0805
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    DigiKey CL21X106KOQNNNE Reel 288,000 2,000
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    Mouser Electronics CL21X106KOQNNNE 52,806
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    Avnet Asia CL21X106KOQNNNE 16 Weeks 100,000
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    Samsung Electro-Mechanics CL21X106KPCLRNC

    CAP CER 10UF 10V X6S 0805
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    DigiKey CL21X106KPCLRNC Reel 172,000 4,000
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    Mouser Electronics CL21X106KPCLRNC 172,336
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    Samsung Electro-Mechanics CL21X106MOQNNNE

    CAP CER 10UF 16V X6S 0805
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    DigiKey CL21X106MOQNNNE Reel 70,000 2,000
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    CL21X106MOQNNNE Cut Tape 3,080 1
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    Avnet Americas CL21X106MOQNNNE Reel 20 Weeks 160,000
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    Mouser Electronics CL21X106MOQNNNE 48,466
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    Samsung Electro-Mechanics CL21X106KAYQNWE

    CAP CER 10UF 25V X6S 0805
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    DigiKey CL21X106KAYQNWE Reel 10,000 2,000
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    CL21X106KAYQNWE Cut Tape 4,642 1
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    Avnet Americas CL21X106KAYQNWE Reel 20 Weeks 80,000
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    Mouser Electronics CL21X106KAYQNWE 71,260
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    KEMET Corporation T521X106M063ATE050

    CAP TANT POLY 10UF 63V 2917
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    DigiKey T521X106M063ATE050 Reel 4,000 500
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    Avnet Americas T521X106M063ATE050 Ammo Pack 54 Weeks, 4 Days 1
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    T521X106M063ATE050 Reel 54 Weeks, 4 Days 500
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    T521X106M063ATE050 Reel 15 Weeks 500
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    Mouser Electronics T521X106M063ATE050 3,781
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    1X106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor m285

    Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
    Text: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 167A690 182A934 1x106 1x1014 1x109 1x10-11 1x1012 5962H92153 36-Lead 28-Lead transistor m285 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650

    hx6228

    Abstract: MIL-PRF38535
    Text: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HX6228 1x106 1x1011 1x1012 1x10-10 32-Lead hx6228 MIL-PRF38535

    238A792

    Abstract: No abstract text available
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 238A792 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, 238A792

    HXNV0100

    Abstract: No abstract text available
    Text: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109


    Original     		PDF HXNV0100 1x106 1x109 1x1012 1x10-10 1x1014 1x1015 N61-0995-000-000

    Untitled

    Abstract: No abstract text available
    Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF 1x106 1x1014 1x109 1x1011 1x10-10 HX6256 28-Lead MIL-STD-1835,

    190A325

    Abstract: C710 D 5962h96877
    Text: 190A325 198A592 128K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 190A325 198A592 5962H96877 40-Lead 32-Lead 1x106 1x1014 1x109 1x10-11 C710 D 5962h96877

    S4 46

    Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 225A833 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, S4 46 AEFJANTXV1N4100-1-BAE/TR/BAE 225A833

    CQFj 44

    Abstract: CQFJ 68 lead CQFJ
    Text: WS128K32-25G2SMX 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • Access Time of 25ns ■ Radiation Tolerant • Total Dose Hardness through 1x106 rad SiO2 ■ Neutron Hardness through 1x1014 cm-2 ■ Dynamic and Static Transient Upset Hardness through


    Original     		PDF WS128K32-25G2SMX 128Kx32 1x106 1x1014 1x1011 1x1012 1x10-10 WS128K32-25AR 128Kx32 CQFj 44 CQFJ 68 lead CQFJ

    HX6256

    Abstract: D-10
    Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HX6256 1x106 1x1014 1x109 1x1011 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead HX6256 D-10

    HLX*8

    Abstract: HLX6228
    Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)


    Original     		PDF HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead HLX*8 HLX6228

    Untitled

    Abstract: No abstract text available
    Text: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process


    OCR Scan     		PDF HR1060 1x106 1x109rad 1x1012rad 1x109upsets/bit-day 1x1014cnrr2

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


    OCR Scan     		PDF HX6228 1x106 1x101 1x109 32-Lead

    Untitled

    Abstract: No abstract text available
    Text: U ltra S table OCXOs Series 5000 FEATURES • Low aging rate day year to 1 X10,n to 1x106 • Excellent temperature ± 3 x 1 0 3 stability 0 to 60°C • Frequency range 4 to 20 MHz - m — Iranlie/ 1/ -I 4— ^ Pin out 50 A Note: Dimensions in mm SPECIFICATIONS


    OCR Scan     		PDF 1x106 TM47320

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products HX6656 32K x 8 ROM—SOI FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Silicon on Insulator SOI 0.75 nm Process (Leff = 0.6 |iim) • Read Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106ra d(S i02)


    OCR Scan     		PDF 1x106ra 1x109 1x101 28-Lead 36-Lead HX6656 MIL-STD-1835, CDIP2-T28

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6256 28-Lead GQG1711

    HR2340

    Abstract: sram pull down honeywell memory sram
    Text: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec


    OCR Scan     		PDF 1x106 1x103rad 1x1012rad HR2340 HR2340 sram pull down honeywell memory sram

    Untitled

    Abstract: No abstract text available
    Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as


    OCR Scan     		PDF 1x106 1x1014cm HC685 IL-l-38535 1x109 1x101 36-Lead

    5962-95845

    Abstract: HX6356
    Text: Honeywell Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)


    OCR Scan     		PDF 1x106rad 1x101 HX6356 36-Lead 5962-95845 HX6356

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF HX6256 1x106rad 1x1014cm 1x109 1x101 28-Lead 4551A72

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


    OCR Scan     		PDF HX6228 1x106 1x1014cm 1x109rad 1x101 32-Lead 1x106rad 2x105

    HX6356

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 nm Process (Le)= 0.6 urn) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiOs)


    OCR Scan     		PDF 1x106 1x101 HX6356 36-Lead HX6356

    HX2160

    Abstract: No abstract text available
    Text: Honeywell HX2000 RICMOS" — SOI GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm R IC M O S IV SOI Process • Total Dose Hardness of >1x106 rad S i02 • Array Sizes from 10K to 336K Available Gates (Raw) Dose Rate Upset Hardness: >1x10'°rad(Si)/sec (5V)


    OCR Scan     		PDF 1x106 1x109 HX2000 HX2160

    smd transistor NJ

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM— SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106 rad(S i02)


    OCR Scan     		PDF 1x106 1x101 1x109 HX6256 28-Lead smd transistor NJ

    Untitled

    Abstract: No abstract text available
    Text: G M/HITE /MICROELECTRONICS 2 WS128K32-25XMRH 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A cce ss Tim e of 25ns R adiation T o le ra n t ■ Organized as 128Kx32; User C onfig u rab le as 2 56K x16 or 5 1 2Kx8 • T o t a l Dose Hardness th ro u g h 1x106 rad Si02


    OCR Scan     		PDF WS128K32-25XMRH 128Kx32 1x106 1x1014crrv2 128Kx32; WS128K32-25XMRH 128K32 128KX32