acs150
Abstract: No abstract text available
Text: WE128K32-XG2TXE HI-RELIABILITY PRODUCT 128Kx32 EEPROM MODULE ADVANCED* FEATURES • Access Times of 150, 200, 250, 300ns ■ Packaging: • 68 lead, Hermetic CQFP G2T , 22.4mm (0.880") square, 4.57mm (0.180") high (Package 509). Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 1)
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WE128K32-XG2TXE
128Kx32
300ns
128Kx32;
256Kx16
512Kx8
WE128K32-XG2TXE
128K32
acs150
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Untitled
Abstract: No abstract text available
Text: WE256K32-XG2TXE HI-RELIABILITY PRODUCT 256Kx32 EEPROM MODULE PRELIMINARY* FEATURES • Access Times of 150, 200, 250, 300ns ■ Packaging: • 68 lead, Hermetic CQFP G2T , 22.4mm (0.880") square, 4.57mm (0.180") high (Package 509). Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 1)
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WE256K32-XG2TXE
256Kx32
300ns
256Kx32.
WE256K32-XG2TXE
256K32
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Q3236
Abstract: PE9601 PE9601EK 9601-11 96011
Text: Product Specification PE9601 2200 MHz UltraCMOS Integer-N PLL for Rad Hard Applications Product Description Peregrine’s PE9601 is a high performance integer-N PLL capable of frequency synthesis up to 2200 MHz. The device is designed for superior phase noise performance while
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PE9601
PE9601
Q3236
PE9601EK
9601-11
96011
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WS512K32-XXX
Abstract: No abstract text available
Text: WS512K32-XXX / EDI8C32512CA HI-RELIABILITY PRODUCT 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES • Access Times of 15*, 17, 20, 25, 35, 45, 55ns ■ 5 Volt Power Supply ■ Packaging ■ Low Power CMOS ■ Built-in Decoupling Caps and Multiple Ground Pins for Low
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WS512K32-XXX
EDI8C32512CA
512Kx32
WS512K32-XH1X
WS512K32-XG2TX
EDI8C32512CA-E
WS512K32-XG4TX
WS512K32XXX
08HYX
09HYX
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WS1M32V-XG3X
Abstract: No abstract text available
Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins
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WS1M32V-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32V-XG3X
I/O31
I/O30
I/O29
I/O28
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Untitled
Abstract: No abstract text available
Text: WF512K32-XXX5 512Kx32 5V NOR FLASH MODULE SMD 5962-94612* FEATURES Access Times of 60, 70, 90, 120, 150ns Low Power CMOS Packaging Embedded Erase and Program Algorithms • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP
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WF512K32-XXX5
512Kx32
150ns
WF512K32-XG2UX5
WF512K32N-XH1X5
WF512K32-XG4TX5
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Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900* Weight FEATURES Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical Access Times of 70ns (SRAM) and 120ns (FLASH)
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WSF128K16-XXX
128Kx16
WSF128K16-H1X
WSF128K16-XG1UX1
120ns
66-pin,
ICCx32
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Untitled
Abstract: No abstract text available
Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES Access Times of 125 and 150ns Automatic Page Write Operation MIL-STD-883 Compliant Devices Available Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection
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WE32K32-XXX
32Kx32
150ns
MIL-STD-883
66-pin,
120ns
125ns
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Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
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WSF512K16-XXX
512KX16
120ns
ICCx16
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Untitled
Abstract: No abstract text available
Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES Access Times of 125 and 150ns Automatic Page Write Operation MIL-STD-883 Compliant Devices Available Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection
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WE32K32-XXX
32Kx32
150ns
MIL-STD-883
66-pin,
120ns
125ns
MIL-PRF-38534
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Untitled
Abstract: No abstract text available
Text: WSF2816-39XX 128Kx16 SRAM / 512Kx16 NOR FLASH MODULE Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation FEATURES Access Times of 35ns SRAM and 90ns (FLASH) Weight: Packaging • WSF2816-39G2UX - 8 grams typical
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WSF2816-39XX
128Kx16
512Kx16
WSF2816-39G2UX
WSF2816-39H1X
ICCx16
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Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
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WSF512K16-XXX
512KX16
120ns
ICCx16
MIL-STD-883
MIL-PRF-38534
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION PE83335 Military Operating Temperature Range 3.0 GHz Integer-N PLL for Low Phase Noise Applications Product Description Peregrine’s PE83335 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior phase noise performance of the PE83335 makes
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PE83335
PE83335
44-lead
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Untitled
Abstract: No abstract text available
Text: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8
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WS1M32V-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32V-XG3X
I/O0-31
A0-18
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MLP48
Abstract: CQFJ CQFj 44 PE83335EK
Text: PRELIMINARY SPECIFICATION PE83335 Military Operating Temperature Range 3.0 GHz Integer-N PLL for Low Phase Noise Applications Product Description Peregrine’s PE83335 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior phase noise performance of the PE83335 makes
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PE83335
PE83335
44-lead
MLP48
CQFJ
CQFj 44
PE83335EK
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WS512K32V-XXX
Abstract: No abstract text available
Text: WS512K32V-XXX HI-RELIABILITY PRODUCT 512Kx32 SRAM 3.3V MODULE PRELIMINARY* FEATURES • Access Times of 15, 17, 20ns ■ Low Voltage Operation ■ Low Power CMOS ■ Packaging ■ Fully Static Operation: ■ TTL Compatible Inputs and Outputs • 66-pin, PGA Type, 1.075 inch square, Hermetic
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WS512K32V-XXX
512Kx32
66-pin,
WS512K32V-XG2TX
WS512K32NV-XH1X
512Kx32;
1Mx16
512Kx32
WS512K32V-XXX
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WS1M32-XG3X
Abstract: No abstract text available
Text: WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES • Access Times of 17, 20, 25ns ■ Low Power CMOS ■ 84 lead, 28mm CQFP, Package 511 ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as two banks of 512Kx32, User Configurable as
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WS1M32-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32-XG3X
I/O31
I/O30
I/O29
I/O28
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WS128K32XXX
Abstract: No abstract text available
Text: WS128K32-XXX / EDI8C32128C HI-RELIABILITY PRODUCT 128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595 FEATURES • ■ ■ ■ ■ ■ Access Times of 15, 17, 20, 25, 35, 45, 55ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging Commercial, Industrial and Military Temperature Ranges
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WS128K32-XXX
EDI8C32128C
128Kx32
MIL-STD-883
WS128K32-XG2TX
EDI8C32128C-E
WS128K32-XH1X
EDI8C32128C-G
WS128K32-XG4TX
10HYX
WS128K32XXX
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Untitled
Abstract: No abstract text available
Text: WSF128K32V-XG2TX 128KX32 SRAM/FLASH 3.3V MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 120ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 25ns (SRAM) and 90ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 16K bytes each
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WSF128K32V-XG2TX
128KX32
120ns
128K32
120ns
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S128K32
Abstract: ACT-S128K32 ACT-S128K32V 5962-9559509HMX 5962-9318710H4X
Text: ACT-S128K32 High Speed 4 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 128K x 8 SRAMs in one MCM ■ Overall configuration as 128K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order
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ACT-S128K32
MIL-STD-883
ACT-S128K32
SCD1659
S128K32
ACT-S128K32V
5962-9559509HMX
5962-9318710H4X
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L076B
Abstract: No abstract text available
Text: M/HITE /M IC R O E LE C TR O N IC S 128Kx32 FLASH MODULE WF128K32-XCJX5 ADVANCED * FEATURES • Acce ss Tim e s o f 90nS to 150nS ■ Packaging ■ Organized as 128Kx32 ■ C o m m e rc ial, In d u strial and M i l i t a r y T e m p e ra tu re Ranges • 6 8-le a d, H erm e tic CQFJ, 2 5.15 mm .990 inch square
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WF128K32-XCJX5
128Kx32
150nS
WF128K32-XCJXte
L076B
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Untitled
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS WSF512K16-XXX 512Kx16SRAM /FLASH MODULE, S M D 5962-96901 FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 35ns S R A M and 90ns (FLASH) ■ 10,000 E rase/Program Cycles ■ A ccess Tim es of 70ns (SRAM) and 120ns (FLASH)
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WSF512K16-XXX
512Kx16SRAM
120ns
120ns
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Untitled
Abstract: No abstract text available
Text: VZÀ WHITE /M IC R O E L E C T R O N IC S 128Kx16 SRAM/FLASH MODULE WSF128K16-XXX P R E LIM IN A R Y * FEATURES FLASH MEM ORY FEATURES • Access Times of 35nS SRAM and 70nS (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70nS (SRAM) and 120nS (FLASH)
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WSF128K16-XXX
128Kx16
120nS
66-pin,
256Kx8
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Untitled
Abstract: No abstract text available
Text: WE32K32-XXX M/HITE /M ICROELECTRONICS 32Kx32 EEPROM MODULE, S M D 5962-94614 FEATURES • A c c e s s T im e s o f 9 0 ,1 2 0 ,1 50ns ■ C o m m ercial, Ind ustrial and M ilita ry Tem perature Ranges ■ M IL-STD -883 Com pliant D e vice s A va ila b le ■ A u to m atic Page W rite Operation
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WE32K32-XXX
32Kx32
66-pin,
28Kx8
64Kx16
128Kx8
150ns
120ns
01HXX
02HXX
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