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    1N415F Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N415F MicroMetrics S - x Band Point Contact Mixer Diode Original PDF
    1N415F MicroMetrics S - X Band Point Contact Mixer Diodes Original PDF
    1N415F BKC International Silicon Point Contact Mixer Diodes Scan PDF
    1N415F Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N415F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N415F Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N415F Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N415FM MicroMetrics RF Mixer Diode, PN Mixer, UHF|SHF, Case Style Original PDF
    1N415FM Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N415FM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N415FMR MicroMetrics RF Mixer Diode, PN Mixer, UHF|SHF, Case Style Original PDF
    1N415FMR Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N415FMR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N415FR MicroMetrics RF Mixer Diode, PN Mixer, UHF|SHF, Case Style Original PDF

    1N415F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N415FM Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9.4G Frequency Min. (Hz)8G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0


    Original     		1N415FM Min335 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N415F Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0 Maximum Conversion Loss (dB)


    Original     		1N415F Min335 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N415FMR Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9.4G Frequency Min. (Hz)8G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0


    Original     		1N415FMR Min335 PDF

    1N23 diode

    Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100
    Text: Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed


    Original     		CS100 CS101 1N23 diode 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100 PDF

    CS100

    Abstract: cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C
    Text: Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed


    Original     		CS100 CS101 CS100 cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C PDF

    JAN1N23WG

    Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
    Text: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED


    OCR Scan     		PDF

    1N415C

    Abstract: "Point Contact Diodes" 1N23G 1N530 JAN1N23WG MA41514 MA494
    Text: Point Contact Diodes MODEL NUMBER PAGE 1N 21D .7-3 1 N 2 1 E . 7-3 1N 21G . 7-3


    OCR Scan     		1N21F. 1N26C A490D A490E. A490G. A492D MA494 MA494B A494C A494D 1N415C "Point Contact Diodes" 1N23G 1N530 JAN1N23WG MA41514 MA494 PDF

    1n415c

    Abstract: 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C
    Text: Point Con tact Diodes: 1 N Series S - X Band Point Contact Mixer Diodes Description This MicroM etrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed


    OCR Scan     		CS100 1N23F 1N23G 1N23WG 1N23H CS101 1N415C 1n415c 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C PDF

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


    OCR Scan     		PDF

    1N23 diode

    Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
    Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for


    OCR Scan     		1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


    OCR Scan     		PDF

    1N23C

    Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
    Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:


    OCR Scan     		PDF

    1N23C diode

    Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
    Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure


    OCR Scan     		DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR PDF

    in23c

    Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
    Text: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make


    OCR Scan     		DO-22, DO-23 DO-37 26GHz. 1N26B DO-37 1N26C 30MHz, 1000Hz in23c IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416 PDF

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


    OCR Scan     		PDF