1N415 Search Results

1n3600

Abstract: 1N4150 1n3600 chip
Contextual Info: P O M P I JTFR DIODF W I T ,r u 1 L/IV7t/U 200rnA Low Power, Switching 1N3600; JAN, JANTX & JANTXV I N 3600 1N4150; JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES DESCRIPTION • • • • This series of switching diodes is useful in many computer sw itching applications, for

75V 150mA Diode

Contextual Info: COMPUTER DIODE 1c i r 150mA Switching Diode vy i" 1N4153, JAN, JANTX & JANTXV I N 4153 1N4534, JAN, JANTX & JANTXV 1N4534 FEATURES • • • • DESCRIPTION This device is particularly suited to applications where tightly controlled forward characteristics and fast recovery

Contextual Info: LS4151 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Electrical data identical with the device 1N4151 • QuadroMELF package • AEC-Q101 qualified • Material categorization: For definitions of compliance

LL4151-GS08

Contextual Info: LL4151 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diodes • Electrical data identical with the device 1N4151 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see

Contextual Info: Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C

Contextual Info: 1N4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • AEC-Q101 qualified • High forward current capability • Material categorization: For definitions of compliance please see

1N4154

Abstract: 1N4154-TAP 1N4154-TR
Contextual Info: 1N4154 Vishay Semiconductors Small Signal Fast Switching Diodes Features • Silicon Epitaxial Planar Diode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

IR5H

Abstract: diode ir01
Contextual Info: MCL4154 Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4154 • Micro Melf package Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage

Contextual Info: LL4151_ Vishay Telefun ken Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4151 Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage

Contextual Info: Tem ic LL4154 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4154 Applications Extreme fast switchess Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current

1N4151

Abstract: LL4151
Contextual Info: 1N4151 FAST SWITCHING DIODE Features • · · · Fast Switching High Reliability High Conductance Surface Mount Version Available LL4151 B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Plastic Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number

Contextual Info: 1N4151_ Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current

1N4148.1N4448

Abstract: BYV37-BYV38 byg20
Contextual Info: Temic Semiconductors Selector Guide - Alphanumeric Index 1N4148.1N4448 1N4150 1N4151 1N4154 1N4728A.1N4761A 1N5221B.1N5267B 1N5417.1N5418 BA1282.BA1283 BA282.BA283 BA479G.BA479S BA604 BA679.BA679S BA682.BA683 BA779.BA779S BA779 - 2 BA979.BA979S BA982.BA983

telefunken ta 350

Abstract: vishay AX
Contextual Info: 1N4154 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current

Contextual Info: LS4151_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4151 • Quadra Melf package Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter Repetitive peak reverse voltage

1N4154 telefunken

Contextual Info: Tem ic 1N4154 S e m i c o n d u c t o r s Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25 °C . Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current

Contextual Info: Diodes High–speed switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B ✻This product is available only outside of Japan. FJEDEC Standard Product The following 1N series diodes are available to support the JEDEC standard. FExternal dimensions Units: mm FAbsolute maximum ratings (Ta = 25°C)

1N4154

Abstract: telefunken 1n4154
Contextual Info: 1N4154 Vishay Telefunken Fast Switching Diode Features D Silicon Epitaxial Planar Diode Applications 94 9367 Extreme fast switches Order Instruction Type Type Differentiation 1N4154 VRRM = 35 V Ordering Code 1N4154–TAP 1N4154–TR Remarks Ammopack Tape and Reel

1N4830

Abstract: mpd200
Contextual Info: DIGITRON SEMICONDUCTORS 1N4156, 1N4157, 1N4453, 1N4829, 1N4830, 1N5179 MPD100 – MPD400A STABISTORS TIGHT TOLERANCE Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Contextual Info: DIGITRON SEMICONDUCTORS 1N4149, 1N4151-1N4154, 1N4446-1N4449 SWITCHING RECTIFIER MAXIMUM RATINGS @ 25°C Parameter Symbol 1N4149 1N4151 1N4152 1N4153 VRM 75V 75V 40V 75V Peak reverse voltage Average rectified current IO Forward surge current, 8.3ms Operating junction temperature range

Contextual Info: 1N4150W Small-Signal Diode SOD-123 .022 0.55 Mounting Pad Layout Top View 0.094 (2.40) 0.055 (1.40) 0.055 (1.40) .112 (2.85) .100 (2.55) .152 (3.85) .140 (3.55) Cathode Band .006 (0.15) max. .053 (1.35) max. .067 (1.70) .055 (1.40) .004 (0.1) max. Dimensions in inches

Contextual Info: 1N4154 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS

DIODE WITH SOD CASE

Abstract: DIODE MARK 35 max 083 1N4150 1N4150W LL4150
Contextual Info: 1N4150 Small Signal Diodes FEATURES ♦ Silicon Epitaxial Planar Diode min. 1.083 27.5 ♦ For general purpose and switching. max. ∅.079 (2.0) ♦ This diode is also available in other Cathode Mark min. 1.083 (27.5) max. .150 (3.8) DO-35 case styles including: the SOD-123 case

1N4154

Abstract: LS4154
Contextual Info: LS4154 Silicon Epitaxial Planar Diode Features D Electrical data identical with the device 1N4154 D Quadro Melf package Applications 96 12009 Extreme fast switches Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage