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    Kyocera AVX Components 5AQ220KABAA

    CAP CER 22PF 500V NP0 RADIAL
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    Kyocera AVX Components 5OK102KABAI

    CAP CER 1000PF 100V Y5P RADIAL
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    DigiKey 5OK102KABAI Ammo Pack
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    Silicon Laboratories Inc 501FAK-ABAG

    MEMS OSC PROG CMEMS LVCMOS 1.7V
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    DigiKey 501FAK-ABAG Tray
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    Kyocera AVX Components 5OQ681KABAA

    CAP CER 680PF 500V Y5P RADIAL
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    Skyworks Solutions Inc 510KAB-AAAG

    XTAL OSC PROG XO CMOS 1.8V 50PPM
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    DigiKey 510KAB-AAAG 1
    • 1 $18.22
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    KABA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Verilog DDR3 memory model

    Abstract: vhdl sdram Verilog DDR memory model mixed signal fpga datasheet example algorithm verilog ddr3 sdram stratix 4 controller Signal Path Designer VHDL-AMS
    Text: Mixed Signal Verification of an FPGA-Embedded DDR3 SDRAM Memory Controller using ADMS Arch Zaliznyak1, Malik Kabani1, John Lam1, Chong Lee1, Jay Madiraju2 1. Altera Corporation 2. Mentor Graphics Corporation Abstract System-level verification of a high-end


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    800-Mbps Verilog DDR3 memory model vhdl sdram Verilog DDR memory model mixed signal fpga datasheet example algorithm verilog ddr3 sdram stratix 4 controller Signal Path Designer VHDL-AMS PDF

    Untitled

    Abstract: No abstract text available
    Text: X5420MP X-Band Manpack Satellite Terminal Features •          Overview RF, Modem and Power Supply Modules are common to the complete Advantech Wireless ManPack line of terminals Supports X- WGS-certified , Ku-Band and KaBands (military and commercial)


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    X5420MP PB-X5420MP-13168 PDF

    fujikura optical

    Abstract: No abstract text available
    Text: Optical isolator for pulsed fiber lasers Koji Omichi,1 Yukihiko Takahashi,1 Kouki Shimohira,1 Jun Sato,1 Takeshi Kizaki,2 Akiharu Funaki,2 and Kazunori Kabayama2 Optical isolators are required for high power pulsed fiber lasers to block reflected light from


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    2Al3O12 fujikura optical PDF

    infiniband Physical Medium Attachment

    Abstract: "toan nguyen" 200MHZ P802 circuit diagram digital clocks Serial RapidIO Infiniband FPGA SoC, Chip, telecom fpga da altera altera 48 fpga 1gbps serdes
    Text: Architecture and Methodology of a SoPC with 3.25Gbps CDR based Serdes and 1Gbps Dynamic Phase Alignment Ramanand Venkata, Wilson Wong, Tina Tran, Vinson Chan, Tim Hoang, Henry Lui, Binh Ton, Sergey Shumurayev, Chong Lee, Shoujun Wang, Huy Ngo, Malik Kabani, Victor Maruri, Tin Lai, Tam Nguyen, Arch


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    25Gbps 125Gbps 622megabits infiniband Physical Medium Attachment "toan nguyen" 200MHZ P802 circuit diagram digital clocks Serial RapidIO Infiniband FPGA SoC, Chip, telecom fpga da altera altera 48 fpga 1gbps serdes PDF

    kaba

    Abstract: ELMA rotary switch ELMA KEYLOCK SWITCH wafer rotary switches
    Text: Keylock Switch Type 08 KABA security lock system based on type 08 selector switch Ruggedized front-end design Keys are sold separately can be re-ordered Registered key system Customized lock functions available Standard Product Variety From 1 x 12 to 4 x 3 poles/positions per wafer


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    PDF

    3 to 10 GHz bandpass filter

    Abstract: No abstract text available
    Text: FBKA-29.75G-1 KaBAND FILTER PRELIMINARY REV: 005, 05/19/04 TECHNICAL DESCRIPTION / APPLICATION MULTI-MIX FILTERS • • • • • • UP TO 40GHz LOW LOSS NO TUNING SMT COMPATIBLE SMALL & LIGHT WEIGHT LOW COST Merrimac’s FBKA Series millimeter-wave filters provide superior performance over conventional filter topologies, with center frequencies as high as 40 GHz. They are extremely small, lightweight, and rugged, and can


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    FBKA-29 75G-1 40GHz 3 to 10 GHz bandpass filter PDF

    J027

    Abstract: TGA49
    Text: TGA4906-SM 4 Watt Ka-Band Power HPA Applications Ka-Band Sat-Com VSAT QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 28 – 31 GHz Power: 36 dBm Psat Gain: 23 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.7 V Typical Package Dimensions: 5.0 x 5.0 x 1.2 mm


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    TGA4906-SM TGA4906-SM J027 TGA49 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information November 19, 2003 4 Watt Ka Band HPA TGA4505-EPU Key Features • • • • • • • • Frequency Range: 24-32 GHz 23 dB Nominal Gain 35.5 dBm Nominal P1dB @30 GHz 36.0 dBm Nominal Psat @30 GHz 40 dBc at SCL Pout 20dBm 0.25 um pHEMT 2MI Technology


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    TGA4505-EPU 20dBm TGA4505-EPU 0007-inch PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information June 2, 2005 Ka-Band Packaged MPA TGA4902-SM Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications


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    TGA4902-SM TGA4902-SM PDF

    TGA4512-SM

    Abstract: RO4003 Ka-band
    Text: TGA4512-SM Ka-Band Driver Amplifier Applications • • Ka-band VSAT Ground Terminal Point-to-Point Radio QFN 3x3mm 12L Product Features • • • • • • • Functional Block Diagram 12 Frequency Range: 28 – 32 GHz Power: 17 dBm Psat, 16 dBm P1dB


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    TGA4512-SM 24dBm TGA4512-SM RO4003 Ka-band PDF

    ka band high power fet amplifier schematic

    Abstract: No abstract text available
    Text: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information May 19, 2004 4 Watt Ka Band HPA TGA4505-EPU Key Features • • • • • • • • Frequency Range: 24-31 GHz 23 dB Nominal Gain 35.5 dBm Nominal P1dB @30 GHz 36.0 dBm Nominal Psat @30 GHz 40 dBc at SCL Pout 20dBm 0.25 um pHEMT 2MI Technology


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    TGA4505-EPU 20dBm TGA4505-EPU 36rmosonic 0007-inch PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information September 21, 2005 32 - 47 GHz Wide Band Driver Amplifier TGA4521 Key Features • • • • • • • • Product Description The TriQuint TGA4521 is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint’s


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    TGA4521 16dBm/Tone TGA4521 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:


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    TGA4516-TS 20dBm TGA4516 TGA45cal 0007-inch TGA4516-TS PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet September 27, 2002 TGA4501-SCC 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal


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    TGA4501-SCC TGA4501-SCC TGA4501 0007-inch PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information September 18, 2006 Ka-Band Packaged MPA TGA4902-SM Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications


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    TGA4902-SM TGA4902-SM PDF

    XP1073-BD

    Abstract: xp1073 DM6030HK XP107
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


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    P1073-BD 16-Feb-10 MIL-STD-883 XP1073-BD XP1073-BD xp1073 DM6030HK XP107 PDF

    NE1280100

    Abstract: NE1280200 NE1280400 ca 9088 PT 14-106
    Text: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE


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    NE1280100 NE1280200 NE1280400 NE1280 NE1280100 NE1280200 NE1280406 24-Hour NE1280400 ca 9088 PT 14-106 PDF

    ultrasonic bond

    Abstract: LMA422 MIL-HDBK-263
    Text: LMA422 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 26 GHz to 30 GHz Frequency Band 3.0 dB Noise Figure 22 dB Gain 5 dBm Output Power at Saturation +3 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA422 is a low noise PHEMT amplifier that operates from 26 to 30GHz.


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    LMA422 LMA422 30GHz. MIL-STD-1686 MIL-HDBK-263. ultrasonic bond MIL-HDBK-263 PDF

    MITSUBISHI CAPACITOR

    Abstract: MGFC5110 LNA ka-band cb amplifier ka-band amplifier
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 Notice : This is not a final specification Some parametric limits are subject to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band


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    MGFC5110 MGFC5110 MITSUBISHI CAPACITOR LNA ka-band cb amplifier ka-band amplifier PDF

    Ka-band oscillator

    Abstract: lnb ku buc ku ku-band buc 10MHz 10dBm oscillator LNB ka band lnb ku-band Ka-band
    Text: Ka-Band Block Up30-31 GHz This product is designed to meet the growing market needs for an L-band to Ka-band upconverter. Its input is an L-band signal in the 1-2 GHz range. The upconverter translates the signal to Kaband in the 30-31 GHz range. It maintains


    OCR Scan
    -92dBc/Hz -102dBc/Hz 10MHz 12-15VDC 800mA 10MHz -120dBc/Hz 100Hz -145dBc/Hz -165dBc/Hz Ka-band oscillator lnb ku buc ku ku-band buc 10MHz 10dBm oscillator LNB ka band lnb ku-band Ka-band PDF

    9701455-S-J1

    Abstract: APH184C
    Text: APH184C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 27 to 31 GHz • Linear gain: >10 dB • Pout > 3 0 dBm • Unconditionally stable • Balanced design provides excellent input and output VS WR • DC power: 4.5 V at 1.1 Amps


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    APH184C APH184C SA051 9701455-S-J1 9701455-S-J1 PDF

    ALH140C

    Abstract: UM 3842 MN1400
    Text: TRYw Ka-Band HEMT Low-Noise Amplifier ALH140C Features • RF Frequency: 24 to 41 GHz • Linear gain: 12 dB • NF: 4dB • Unconditionally stable • Balanced design provides excellent input and output VSWR • Biasable from either side of chip • PldB: 15 dB


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    ALH140C ALH140C compat2500 m1930 006/J-2 UM 3842 MN1400 PDF

    kaba

    Abstract: 149-188
    Text: Ka-Band Power GaAs MESFET 61Alpha AFM04P2-000 Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 GHz ■ 0 .25 jj.m Ti/Pt/Au Gates ■ Passivated Surface


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    AFM04P2-000 61Alpha kaba 149-188 PDF