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    1M16E0 Search Results

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    AS4C1M16F5-60JC

    Abstract: AS4C1M16F5-60JI AS4C1M16F5 AS4C1M16F5-60tc
    Text: AS4C1M16F5 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - Active: 880 mW max (1M16E0-60)


    Original     		AS4C1M16F5 AS4C1M16E0-60) 42-pin 44/50-pin AS4C1M16F5 42-pin AS4C1M16F5-50JC AS4C1M16F5-50JI AS4C1M16F5-60JC AS4C1M16F5-60JI AS4C1M16F5-60JC AS4C1M16F5-60JI AS4C1M16F5-60tc PDF

    Untitled

    Abstract: No abstract text available
    Text: 3UHOLPLQDU\LQIRUPDWLRQ $6&0  90ð&026'5$0 IDVWSDJHPRGH )HDWXUHV • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ


    Original     		42-pin 44/50-pin AS4C1M16E0-60) AS4C1M16F5-50JC AS4C1M16F5-50JI AS4C1M16F5-50TC AS4C1M16F5-50TI AS4C1M16F5-60JC PDF

    1m16e

    Abstract: No abstract text available
    Text: AS4C1M16F5 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - Active: 880 mW max (1M16E0-60)


    Original     		AS4C1M16F5 AS4C1M16E0-60) 42-pin 44/50-pin AS4C1M16F5 AS4C1M16F5-50JC AS4C1M16F5-50JI AS4C1M16F5-50TC 1m16e PDF

    4lc1m16e5-6

    Abstract: No abstract text available
    Text: H ig h P e r f o r m a n t e lM x 16 CM OS DRAM » H A S4C 1M 16E 5 A S4L C 1M 16E 5 A 1 M X 16 CMOS EDO DRAM Preliminary information Features • O rg a n iz a tio n : 1,048,576 w o r d s x 16 b its • 1 0 2 4 re fre s h cycles, 16 m s re fre s h in terv al


    OCR Scan     		16E5-60) 4LC1M16E5-60) 42-pin AS4C1M16ES-50JC AS4C1M16E5-60JC AS4LC1M16E5-50TC -60TC 42-pin 1M16E0 4lc1m16e5-6 PDF

    4LC1M16E5

    Abstract: 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A as4c1m16e5 4lc1m16e5-60 AS4LC1M16E5
    Text: H ig h P e rfo rm a n c e l M x 16 CM OS DRAM » H A S4C1M 16E5 AS4LC1M 16E5 A l M x 16 CM OS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 re fre sh cycles, 16 m s re fre sh in te rv a l - RAS-only or CAS-before-RAS refresh


    OCR Scan     		AS4C1M16E5 AS4LC1M16E5 4C1M16E5-60) 4LC1M16E5-60) 42-pin 4C1M16E5) 44/50-pin 4LC1M16E5) AS4C1M16E5) AS4C1M16E5 4LC1M16E5 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A 4lc1m16e5-60 AS4LC1M16E5 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Perform ance lM x 16 CMOS DRAM A S4C 1M 16E 5 1 M x 16 CMOS EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write


    OCR Scan     		16E0-60) 42-pin 71pS4C AS4C1M16E5-60JC 1M16E0 42-pin PDF

    T835

    Abstract: No abstract text available
    Text: H ¡ 5»h P i ' r i i » n i i d i n i \ S 4 C I M I 6L:0 A I M X I i C M O S l K \ M \S4I.C I M I 610 I MX 16 CM US LDO DK/l M Preliminary information Features • O r g a n iz a t io n : 1 ,0 4 8 ,5 7 6 w o r d s x 16 b its 1 R e a d - m o d if y - w r it e


    OCR Scan     		AS4C1M16E0 AS4LC1M16E0 16E0-60JC I6E0-60JC 42-pin 16E0-70JC IM16E0 T835 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ I l AS4C1M16E5 AS4LC1M16E5 A 5V/3V l M x l ó CMOS DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed ■Read-modify-write >TTL-compatible, three-state DQ >JEDEC standard package and pinout - 4 5 /5 0 /6 0 ns RA S access tim e


    OCR Scan     		AS4C1M16E5 AS4LC1M16E5 42-pin /50-p 6E5-60) AS4C1M16ion. AS4LC1M16E5 44/50-pin 16E5-45TCAS4LC1M PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS4C1M16F5 II 5V 1M x 16 C M O S DRAM fast page mode Features • O rganization: 1,048 ,5 7 6 w ords • H igh speed X • 1024 refresh cycles, 16 m s refresh interval 16 bits - K A S -o n ly o r C A S -b e fo r e -K A S r e f r e s h


    OCR Scan     		AS4C1M16F5 42-pin AS4C1M16F5-50JC AS4C1M16F5-60JC 1M16E0 PDF

    Untitled

    Abstract: No abstract text available
    Text: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 AS4LC1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0


    OCR Scan     		AS4LC1M16EÃ 42-pin 4C1M16EO-SO) PDF

    Untitled

    Abstract: No abstract text available
    Text: H ig h P e r f o r m a n c e 4M X 4 CM OS DRAM » H A S4C 4M 4E0 A S4L C 4M 4E 0 4 M X 4 CMOS EDO DRAM Advance information Features • O r g a n iz a t io n : 4 , 1 9 4 , 3 0 4 w o r d s x 4 b its JED EC s ta n d a r d p a c k a g e • H ig h s p e e d - 4 0 0 m il, 2 4 /2 6 - p i n SOJ


    OCR Scan     		1-30004-A. 1M16E0 l-30004-A. PDF

    4C1M16

    Abstract: 1MX16 4LC1M16
    Text: H ig h P erfo rm a n ce 1M X 16 CMOS DRAM AS4C1 M l 6E0 1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • H igh speed • Read-modify-write • TTL-compatibie, three-state I/O • JEDEC standard package and pinout


    OCR Scan     		1MX16 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) 6E0-50 4C1M16E0-60 6E0-70 AS4C1M16E0 4C1M16 4LC1M16 PDF

    AS4C1M16ES

    Abstract: 4C1M16E5 LR 3441 1MX16 AS4C1M16E5 LMZ 9 4C1M16E5-60
    Text: H ig h P e r fo r m a n c e lM x 16 CM OS DRAM » II A S4C 1M 16E 5 I lM x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cydes, 16 ms refresh interval - RAS-only o r CAS-before-RAS refresh


    OCR Scan     		AS4C1M16E5 1MX16 4C1M16E0-60) 42-pin 12S4C1M16E5 Capacitance15 42-pin AS4C1M16E5-60JC 1M16E0 AS4C1M16ES 4C1M16E5 LR 3441 AS4C1M16E5 LMZ 9 4C1M16E5-60 PDF

    Untitled

    Abstract: No abstract text available
    Text: H igh Performance 1MX16 CMOS DRAM •■ II 1M16E0 1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 1M16E0


    OCR Scan     		1MX16 AS4C1M16E0 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) AS4LC1M16E0 AS4LC1M16EO-70JC 42-pm 1M16E0 PDF

    AS4C1M16F5

    Abstract: No abstract text available
    Text: Preliminary information •■ AS4C1M16F5 1 5V lM x 16 CM OS DRAM fast page mode Features • O rg an izatio n : 1 ,0 4 8 ,5 7 6 w o rd s • H ig h speed X • 1024 refresh cycles, 16 m s refresh in terv al 16 bits - K A S -only o r C A S-before-K A S r e f r e s h


    OCR Scan     		AS4C1M16F5 AS4C1M16E0-60) 42-pin AS4C1M16F5-50JC AS4C1M16F5-60JC IM16E0 AS4C1M16F5 PDF