Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1M X 16BIT X 4 BANKS SYNCHRONOUS DRAM Search Results

    1M X 16BIT X 4 BANKS SYNCHRONOUS DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-USB2AMBMMC-001 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') Datasheet
    CS-USB3IN1WHT-000 Amphenol Cables on Demand Amphenol CS-USB3IN1WHT-000 3-in-1 USB 2.0 Universal Apple/Android Charge & Sync Cable Adapter - USB Type A Male In - Apple Lightning (8-Pin) / Apple 30-Pin / USB Micro-B (Android) Male Out - White Datasheet
    CS-USB2AMBMMC-002 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') Datasheet
    54S163J/B Rochester Electronics LLC 54S163 - Synchronous 4-Bit Counters Visit Rochester Electronics LLC Buy
    74167N-ROCS Rochester Electronics 74167 - Sync Decade Rate Multipliers Visit Rochester Electronics Buy

    1M X 16BIT X 4 BANKS SYNCHRONOUS DRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S641632C

    Abstract: circuit diagram for auto on off
    Text: K4S641632C CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Jun. 1999 K4S641632C CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632C 64Mbit 16Bit K4S641632C A10/AP circuit diagram for auto on off

    K4S641632E-TC75

    Abstract: No abstract text available
    Text: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.2 Sept. 2001 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632E 64Mbit 16Bit K4S641632E A10/AP K4S641632E-TC75

    K4S64163

    Abstract: K4S641632E
    Text: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632E 64Mbit 16Bit K4S641632E A10/AP K4S64163

    Untitled

    Abstract: No abstract text available
    Text: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Dec. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Dec. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632E 64Mbit 16Bit A10/AP

    Untitled

    Abstract: No abstract text available
    Text: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jun. 1999 K4S641632D CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632D 64Mbit 16Bit A10/AP

    KM416S4031BT-G8

    Abstract: No abstract text available
    Text: KM416S4031B CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION •JEDEC standard 3.3V power supply •SSTL_3 Class II compatible with multiplexed address •Four banks operation •MRS cycle with address key programs


    Original     		PDF KM416S4031B 16Bit KM416S4031B A10/AP KM416S4031BT-G8

    K4S641632C

    Abstract: 54TSOP2 54-TSOP2-400AF
    Text: K4S641632C CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS


    Original     		PDF K4S641632C 16Bit K4S641632C 54-TSOP2-400AF 54TSOP2 54-TSOP2-400AF

    HY5DV651622

    Abstract: No abstract text available
    Text: HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM DESCRIPTION The Hyundai HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of


    Original     		PDF HY5DV651622 16Bit HY5DV651622 864-bit 576x16. 400mil 66pin

    HY5DV651622

    Abstract: No abstract text available
    Text: HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM DESCRIPTION The Hyundai HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of


    Original     		PDF HY5DV651622 16Bit HY5DV651622 864-bit 576x16. 400mil 66pin

    KM416S4031BT-G8

    Abstract: KM416S4031BT-G7
    Text: Preliminary CMOS SDRAM KM416S4031B 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Four banks operation • MRS cycle with address key programs


    Original     		PDF KM416S4031B 16Bit KM416S4031B KM416S4031BT-G8 KM416S4031BT-G7

    km416s4031ct-g

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S4031C 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Four banks operation • MRS cycle with address key programs


    Original     		PDF KM416S4031C 16Bit KM416S4031C A10/AP km416s4031ct-g

    KM416S4031C

    Abstract: 1M x 16Bit x 4 Banks Synchronous DRAM km416s4031ct-g
    Text: Preliminary CMOS SDRAM KM416S4031C 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Four banks operation • MRS cycle with address key programs


    Original     		PDF KM416S4031C 16Bit KM416S4031C A10/AP 1M x 16Bit x 4 Banks Synchronous DRAM km416s4031ct-g

    HY57V651620B

    Abstract: No abstract text available
    Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V651620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V651620B is organized as 4banks of


    Original     		PDF HY57V651620B 16Bit HY57V651620B 864-bit 576x16. 400mil 54pin

    HY57V651620B

    Abstract: 10si
    Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V651620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V651620B is organized as 4banks of


    Original     		PDF HY57V651620B 16Bit HY57V651620B 864-bit 576x16. 400mil 54pin 10si

    TBS6416B4E-7G

    Abstract: TBS6416B4E-7 54PIN TBS6416B4E 1M x 16Bit x 4 Banks Synchronous DRAM TwinMOS
    Text: M.tec TBS6416B4E 1M x 16Bit x 4 Banks synchronous DRAM GENERAL DESCRIPTION The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of


    Original     		PDF TBS6416B4E 16Bit TBS6416B4E TBS6416B4E-7G TBS6416B4E-7 54PIN 1M x 16Bit x 4 Banks Synchronous DRAM TwinMOS

    TBS6416B4E-7G

    Abstract: 54PIN TBS6416B4E cke02v TBS6416B4E-7
    Text: M.tec TBS6416B4E 1M x 16Bit x 4 Banks synchronous DRAM GENERAL DESCRIPTION The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of


    Original     		PDF TBS6416B4E 16Bit TBS6416B4E TBS6416B4E-7G 54PIN cke02v TBS6416B4E-7

    TBS6416B4E-7

    Abstract: TBS6416B4E-6 TBS6416B4E-6E TBS6416B4E M.tec M-tec tbs6416
    Text: M.tec TBS6416B4E 1M x 16Bit x 4 Banks synchronous DRAM GENERAL DESCRIPTION The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of


    Original     		PDF TBS6416B4E 16Bit TBS6416B4E TBS6416B4E-7 TBS6416B4E-6 TBS6416B4E-6E M.tec M-tec tbs6416

    HY5DV651622

    Abstract: HY*651622
    Text: HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM DESCRIPTION The Hynix HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of 1,048,576x16.


    Original     		PDF HY5DV651622 16Bit HY5DV651622 864-bit 576x16. 400mil 66pin HY*651622

    HY5DV651622

    Abstract: HY5DV651622TC
    Text: HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM PRELIMINARY DESCRIPTION The Hyundai HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of


    Original     		PDF HY5DV651622 16Bit HY5DV651622 864-bit 576x16. 400mil 66pin HY5DV651622TC

    HY5DV651622TC-G55

    Abstract: HY5DV651622 HY5DV651622TC
    Text: HY5DV651622T 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM DESCRIPTION The Hynix HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of 1,048,576x16.


    Original     		PDF HY5DV651622T 16Bit HY5DV651622 864-bit 576x16. 400mil 66pin HY5DV651622TC-G55 HY5DV651622TC

    HY57V641620HG

    Abstract: HY57V641620HGLT-H HY57V641620HGLT-K HY57V641620HGT-8 HY57V641620HGT-H HY57V641620HGT-K HY57V641620HGT-P HY57V641620HGT-S
    Text: HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16.


    Original     		PDF HY57V641620HG 16Bit HY57V641620HG 864-bit 576x16. 400mil 54pin HY57V641620HGLT-H HY57V641620HGLT-K HY57V641620HGT-8 HY57V641620HGT-H HY57V641620HGT-K HY57V641620HGT-P HY57V641620HGT-S

    HY57V641620HG

    Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
    Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16.


    Original     		PDF HY57V651620B 16Bit HY57V641620HG 864-bit 576x16. 400mil 54pin HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S403OC is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		PDF KM416S4030C 16Bit KM416S403OC

    KM416S4030A

    Abstract: KM416S4030AT KM416S4030AT-G
    Text: KM416S4030A CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES •• •• •• - GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS Latency 2 & 3


    OCR Scan     		PDF KM416S4030A 16Bit KM416S4030A KM416S4030AT KM416S4030AT-G