S10-1617
Abstract: No abstract text available
Text: SPICE Device Model Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4004DY
18-Jul-08
S10-1617
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7629DN Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7629DN
18-Jul-08
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si5429
Abstract: marking G2 Si5429DU
Text: Si5429DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.015 at VGS = - 10 V - 12a 0.022 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package
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Si5429DU
Si5429DU-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si5429
marking G2
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Si4401DDY
Abstract: No abstract text available
Text: SPICE Device Model Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4401DDY
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiS454DN
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si5410DU Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 40 0.018 at VGS = 10 V 12 0.021 at VGS = 4.5 V 12 Qg (Typ.) 10 nC PowerPAK ChipFET Single 1 2 Marking Code D 3 D D G D 7 Lot Traceability
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Si5410DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5943DU Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.064 at VGS = - 4.5 V - 6a 0.089 at VGS = - 2.5 V - 6a 0.120 at VGS = - 1.8 V a VDS (V) - 12 -6 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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Si5943DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5459DU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a -8 e -7.5 RDS(on) (Ω) 0.052 at VGS = -4.5 V 0.082 at VGS = -2.5 V -20 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested 8 • Material categorization:
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Si5459DU
Si5459DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5482DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.015 at VGS = 10 V 12 0.0175 at VGS = 4.5 V 12 Qg (Typ.) 16 nC PowerPAK ChipFET Single 1 D AE XXX 4 Lot Traceability and Date Code D D • Load Switch, PA Switch, and Battery Switch
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Si5482DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5485DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 12a 0.042 at VGS = - 2.5 V a - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Si5485DU
Si5485DU-T1-electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiA923EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.054 at VGS = - 4.5 V - 4.5a 0.070 at VGS = - 2.5 V - 4.5a 0.104 at VGS = - 1.8 V - 4.5a 0.165 at VGS = - 1.5 V - 1.5 • Halogen-free According to IEC 61249-2-21
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SiA923EDJ
SC-70
2002/95/EC
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI5481DU
Abstract: No abstract text available
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5938DU Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 Qg (Typ.) 6 nC PowerPAK ChipFET Dual CA G1 XXX 3 4 S2 D2 Part # Code G2
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Si5938DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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sharp laser diodes
Abstract: TSOP855
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0090-1010
sharp laser diodes
TSOP855
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PowerPAK ChipFET Single
Abstract: No abstract text available
Text: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Si5484DU
Si5484DU-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
PowerPAK ChipFET Single
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300A thyristor gate control circuit
Abstract: No abstract text available
Text: VSK.F200.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3500 VRMS isolating voltage
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E78996
2002/95/EC
11-Mar-11
300A thyristor gate control circuit
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SI 1120
Abstract: No abstract text available
Text: VLMS333., VLMR333., VLMK333., VLMO333., VLMY333. Vishay Semiconductors Power SMD LED PLCC-2 FEATURES 19225 DESCRIPTION The VLM.333. series is an advanced modification of the Vishay VLM.31. series. It is designed to incorporate larger chips, therefore, capable of
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VLMS333.
VLMR333.
VLMK333.
VLMO333.
VLMY333.
JESD22-A114-B
J-STD-020
2002/95/EC
2002/96/EC
AEC-Q101
SI 1120
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Untitled
Abstract: No abstract text available
Text: New Product Si5906DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.031 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5906DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition
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Si3477DV
2002/95/EC
Si3477DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET
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Si5479DU
Si5479DU-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si1401
Abstract: SI1401EDH-T1-GE3 si1401e
Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21
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Si1401EDH
2002/95/EC
OT-363
SC-70
Si1401EDH-T1-GE3
18-Jul-08
Si1401
si1401e
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Untitled
Abstract: No abstract text available
Text: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET
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Si5418DU
Si5418DU-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SODIMM DDR2 Mechanical Dimensions
Abstract: 200POS DDR2 SO-DIMM DDR2 sodimm pcb layout SODIMM DDR2 sodimm socket 6-1746530-4 DDR2 SODIMM
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . BY ^ C O C O P Y R IG H T RELEASED E L E C T R O N IC S FO R ALL C O R P O R A T IO N . 2 P U B L IC A T IO N R IG H T S REVISIO NS RESERVED. LTR D1 D E S C R IP T IO N DATE EC R - 10-01 A PVD SO 19JUL10 KK R
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OCR Scan
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19JUL10
UL94V-0
150EA/REEL
200POS
31MAR2000
SODIMM DDR2 Mechanical Dimensions
DDR2 SO-DIMM
DDR2 sodimm pcb layout
SODIMM
DDR2 sodimm socket
6-1746530-4
DDR2 SODIMM
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