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    SI7629DN Price and Stock

    Vishay Siliconix SI7629DN-T1-GE3

    MOSFET P-CH 20V 35A PPAK1212-8
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    DigiKey SI7629DN-T1-GE3 Digi-Reel 18,216 1
    • 1 $1.64
    • 10 $1.041
    • 100 $1.64
    • 1000 $0.50008
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    SI7629DN-T1-GE3 Cut Tape 18,216 1
    • 1 $1.64
    • 10 $1.041
    • 100 $1.64
    • 1000 $0.50008
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    SI7629DN-T1-GE3 Reel 12,000 3,000
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    New Advantage Corporation SI7629DN-T1-GE3 3,000 1
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    Vishay Intertechnologies SI7629DN-T1-GE3

    Trans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7629DN-T1-GE3)
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    Avnet Americas SI7629DN-T1-GE3 Reel 17 Weeks 3,000
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    Mouser Electronics SI7629DN-T1-GE3 30,864
    • 1 $1.07
    • 10 $0.872
    • 100 $0.616
    • 1000 $0.458
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    Verical SI7629DN-T1-GE3 3,000 3,000
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    Newark SI7629DN-T1-GE3 Reel 3,000
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    TTI SI7629DN-T1-GE3 Reel 9,000 3,000
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    TME SI7629DN-T1-GE3 1
    • 1 $1.03
    • 10 $0.92
    • 100 $0.73
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    EBV Elektronik SI7629DN-T1-GE3 18 Weeks 3,000
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    Vishay Intertechnologies SI7629DNT1GE3

    P-CHANNEL 20 V (D-S) MOSFET Power Field-Effect Transistor, 35A I(D), 20V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI7629DNT1GE3 3,000
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    SI7629DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7629DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 35A 1212-8 PPAK Original PDF

    SI7629DN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7629DN Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7629DN 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7629DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0046 at VGS = - 10 V - 35a 0.0062 at VGS = - 4.5 V - 35a 0.0117 at VGS = - 2.5 V - 35a Qg (Typ.) 59 nC PowerPAK 1212-8 • TrenchFET® Gen III P-Channel Power MOSFET


    Original     		PDF Si7629DN Si7629DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7629DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0046 at VGS = - 10 V - 35a 0.0062 at VGS = - 4.5 V - 35a 0.0117 at VGS = - 2.5 V - 35a Qg (Typ.) 59 nC PowerPAK 1212-8 • TrenchFET® Gen III P-Channel Power MOSFET


    Original     		PDF Si7629DN Si7629DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7629DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.0046 at VGS = - 10 V 0.0062 at VGS = - 4.5 V 0.0117 at VGS = - 2.5 V - 20 ID (A) - 35a - 35a - 35a Qg (Typ.) 59 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7629DN 2002/95/EC Si7629DN-T1-GE3 11-Mar-11

    5540a

    Abstract: si7629
    Text: New Product Si7629DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.0046 at VGS = - 10 V 0.0062 at VGS = - 4.5 V 0.0117 at VGS = - 2.5 V - 20 ID (A) - 35a - 35a - 35a Qg (Typ.) 59 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7629DN 2002/95/EC Si7629DN-T1-GE3 18-Jul-08 5540a si7629

    Untitled

    Abstract: No abstract text available
    Text: Si7629DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si7629DN AN609, 1330m 3935m 1989m 7893m 7039m 1209m 1355m

    TSOP8

    Abstract: SI7629DN
    Text: New Product Si7629DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0046 at VGS = - 10 V - 35a 0.0062 at VGS = - 4.5 V - 35a 0.0117 at VGS = - 2.5 V - 35a Qg (Typ.) 59 nC PowerPAK 1212-8 • TrenchFET® Gen III P-Channel Power MOSFET


    Original     		PDF Si7629DN Si7629DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP8

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836