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Vishay Siliconix SI3477DV-T1-GE3 MOSFET P-CH 12V 8A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3477DV-T1-GE3	Cut Tape	22,836		1	1 $1.13 10 $0.707 100 $1.13 1000 $0.32557 10000 $0.32557	Buy Now
	SI3477DV-T1-GE3	Digi-Reel	22,836		1	1 $1.13 10 $0.707 100 $1.13 1000 $0.32557 10000 $0.32557	Buy Now
	SI3477DV-T1-GE3	Reel	21,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.2375	Buy Now
RS	SI3477DV-T1-GE3	Bulk			20	1 - 10 - 100 $0.76 1000 $0.69 10000 $0.65	Get Quote
New Advantage Corporation	SI3477DV-T1-GE3		3,000		1	1 - 10 - 100 - 1000 - 10000 $0.2894	Buy Now
Vishay Intertechnologies SI3477DV-T1-GE3 P-CHANNEL 12-V (D-S) MOSFET - Tape and Reel (Alt: SI3477DV-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI3477DV-T1-GE3	Reel		21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.2337	Buy Now
Verical	SI3477DV-T1-GE3		6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.232	Buy Now
	SI3477DV-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.3846	Buy Now
Arrow Electronics	SI3477DV-T1-GE3		6,000	21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.3507	Buy Now
Newark	SI3477DV-T1-GE3	Cut Tape	4,730		1	1 $0.59 10 $0.531 100 $0.4 1000 $0.4 10000 $0.4	Buy Now
	SI3477DV-T1-GE3	Reel			3,000	1 $0.335 10 $0.335 100 $0.335 1000 $0.335 10000 $0.303	Buy Now
EBV Elektronik	SI3477DV-T1-GE3			22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Others SI3477DVT1GE3 AVAILABLE EU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI3477DVT1GE3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI3477DV Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI3477DV-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 8A 6-TSOP		Original	PDF

SI3477DV Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si3477DV 2002/95/EC Si3477DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si3477DV 2002/95/EC Si3477DV-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si3477DV 2002/95/EC Si3477DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si3477DV 2002/95/EC Si3477DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si3477DV Abstract: si3477 Text: SPICE Device Model Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si3477DV 18-Jul-08 si3477
28-5940 Abstract: 71004 Text: Si3477DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si3477DV AN609, 6936u 3562m 9719m 9148u 3406m 5349m 08-Jun-10 28-5940 71004
si3477 Abstract: S1015 Text: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si3477DV 2002/95/EC Si3477DV-T1-GE3 11-Mar-11 si3477 S1015
Untitled Abstract: No abstract text available Text: SPICE Device Model Si3477DV www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si3477DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si7141 Abstract: SiA447DJ SI7615A Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on	Original	PDF	SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836