INNER CARTON LABEL
Abstract: 912-050
Text: 107-68160 Packaging Specification 18Jun07 Rev H 2.5 mm Single Mate Conn on Tape Header 1. PURPOSE 目的 Define the packaging specifiction and packaging method of 2.5 mm Single Mate Conn on Tape Header product. 订定 2.5 mm Single Mate Conn on Tape Header 产品之包装规格及包装方式。
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18Jun07
X-1376500-X
X-1376499-X
X-1376492-X
X-1376490-X
M1/900
M1/450
QR-ME-030B
INNER CARTON LABEL
912-050
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912-050
Abstract: No abstract text available
Text: 107-68159 Packaging Specification 18Jun07 Rev K ON TAPING RADIAL 2.5MM PITCH MIS 1. PURPOSE 目的 Define the packaging specifiction and packaging method of ON TAPING (RADIAL) 2.5MM PITCH MIS products. 订定 ON TAPING (RADIAL) 2.5MM PITCH MIS 产品之包装规格及包装方式。
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18Jun07
917502-X
X-177538-X
M1/1500
M1/750
QR-ME-030B
912-050
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SI4431CDY
Abstract: No abstract text available
Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4431CDY
Si4431CDY-T1-E3
Si4431CDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized
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Si4804BDY
2002/95/EC
Si4804BDY-T1-E3
Si4804BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQ4940EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.055 ID (A)
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SQ4940EY
AEC-Q101
2002/95/EC
SQ4940EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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s0913
Abstract: No abstract text available
Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature
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Si4486EY
2002/95/EC
Si4486EY-T1-E3
Si4486EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
s0913
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Untitled
Abstract: No abstract text available
Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature
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Si4484EY
2002/95/EC
Si4484EY-T1-E3
Si4484EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI4850EY-t1g
Abstract: si4850
Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4850EY
2002/95/EC
Si4850EY-T1-E3
Si4850EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI4850EY-t1g
si4850
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*4947ad
Abstract: No abstract text available
Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4947ADY
2002/95/EC
Si4947ADY-T1-E3
Si4947ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
*4947ad
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si4916
Abstract: No abstract text available
Text: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V
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Si4916DY
Si4916DY-T1-E3
Si4916DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4916
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si9945b
Abstract: SI9945BDY SI9945BDY-T1-GE si9945bd
Text: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si9945BDY
Si9945BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si9945b
SI9945BDY-T1-GE
si9945bd
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Untitled
Abstract: No abstract text available
Text: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4953ADY
2002/95/EC
Si4953ADY-T1-E3
Si4953ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Diode HER 507
Abstract: No abstract text available
Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V
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Si4412DY
2002/95/EC
Si4412DY-T1-E3
Si4412DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Diode HER 507
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Si9407AEY
Abstract: No abstract text available
Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si9407AEY
2002/95/EC
Si9407AEY-T1-E3
Si9407AEY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si4838
Abstract: No abstract text available
Text: Si4838DY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 25 0.004 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated
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Si4838DY
Si4838DY-T1-E3
Si4838DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4838
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Untitled
Abstract: No abstract text available
Text: Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.015 at VGS = - 10 V - 16.1 0.022 at VGS = - 4.5 V - 13.3 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4401DDY
2002/95/EC
Si4401DDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si410
Abstract: Si4104
Text: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchET Power MOSFET • 100 % Rg Tested
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Si4104DY
2002/95/EC
Si4104DY-T1-E3
Si4104DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si410
Si4104
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si4162
Abstract: SI4162D
Text: Si4162DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 19.3a 0.010 at VGS = 4.5 V a • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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Si4162DY
Si4162DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4162
SI4162D
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SI4559ADY
Abstract: No abstract text available
Text: Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = - 10 V - 3.9 0.150 at VGS = - 4.5 V - 3.5
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Si4559ADY
Si4559ADY-T1-E3
Si4559ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4511DY Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.0145 at VGS = 10 V 9.6 0.017 at VGS = 4.5 V 8.6 0.033 at VGS = - 4.5 V - 6.2 0.050 at VGS = - 2.5 V -5 • Halogen-free According to IEC 61249-2-21
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Si4511DY
2002/95/EC
Si4511DY-T1-E3
Si4511DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si4168
Abstract: 69005
Text: Si4168DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 24 0.0076 at VGS = 4.5 V 21 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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Si4168DY
Si4168DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4168
69005
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SI4430B
Abstract: si4430bd
Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested
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Si4430BDY
Si4430BDY-T1-E3
Si4430BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI4430B
si4430bd
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Untitled
Abstract: No abstract text available
Text: SQ4483EEY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 30 RDS(on) () at VGS = - 10 V 0.0085 RDS(on) () at VGS = - 4.5 V 0.0200 ID (A) • ESD Protection: 3000 V
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SQ4483EEY
AEC-Q101
SQ4483EEY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4774DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.5 nC SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Halogen-free According to IEC 61249-2-21
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Si4774DY
Si4774DY-T1-GE3
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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