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    SI4850EY Price and Stock

    Vishay Siliconix SI4850EY-T1-E3

    MOSFET N-CH 60V 6A 8SO
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    DigiKey SI4850EY-T1-E3 Reel 7,500 2,500
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    SI4850EY-T1-E3 Cut Tape 1,999 1
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    • 10 $1.41
    • 100 $1.1226
    • 1000 $0.80598
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    SI4850EY-T1-E3 Digi-Reel 1
    • 1 $1.7
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    Vishay Siliconix SI4850EY-T1-GE3

    MOSFET N-CH 60V 6A 8SO
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    DigiKey SI4850EY-T1-GE3 Reel 5,000 2,500
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    SI4850EY-T1-GE3 Cut Tape 2,052 1
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    SI4850EY-T1-GE3 Digi-Reel 1
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    • 100 $1.1226
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    Vishay Siliconix SI4850EY-T1

    MOSFET N-CH 60V 6A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4850EY-T1 Reel 2,500
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    Vishay Intertechnologies SI4850EY-T1-E3

    Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4850EY-T1-E3)
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    Avnet Americas SI4850EY-T1-E3 Reel 47,500 9 Weeks 2,500
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    SI4850EY-T1-E3 Ammo Pack 8 Weeks, 1 Days 1
    • 1 $1.14
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    Mouser Electronics SI4850EY-T1-E3 20,583
    • 1 $1.7
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    • 100 $1.13
    • 1000 $0.806
    • 10000 $0.695
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    Bristol Electronics SI4850EY-T1-E3 8,506
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    SI4850EY-T1-E3 50
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    Quest Components SI4850EY-T1-E3 53
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    SI4850EY-T1-E3 36
    • 1 $2.2
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    SI4850EY-T1-E3 1,940
    • 1 $3.28
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    • 1000 $1.23
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    SI4850EY-T1-E3 2
    • 1 $4.68
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    TTI SI4850EY-T1-E3 Cut Tape 1,430 10
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    SI4850EY-T1-E3 Reel 30,000 2,500
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    TME SI4850EY-T1-E3 1,345 1
    • 1 $1.614
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    • 100 $1.101
    • 1000 $0.802
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    Rutronik SI4850EY-T1-E3 Reel 10,000 2,500
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    Avnet Asia SI4850EY-T1-E3 14 Weeks 2,500
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    New Advantage Corporation SI4850EY-T1-E3 95,000 1
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    Vishay Intertechnologies SI4850EY-T1-GE3

    Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4850EY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4850EY-T1-GE3 Reel 5,000 9 Weeks 2,500
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    SI4850EY-T1-GE3 Reel 2,500
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    Mouser Electronics SI4850EY-T1-GE3 10,479
    • 1 $1.46
    • 10 $1.25
    • 100 $1.04
    • 1000 $0.78
    • 10000 $0.695
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    Bristol Electronics SI4850EY-T1-GE3 1,745
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    TTI SI4850EY-T1-GE3 Reel 22,500 2,500
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    Avnet Asia SI4850EY-T1-GE3 14 Weeks 2,500
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    • 10000 $1.0074
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    New Advantage Corporation SI4850EY-T1-GE3 2,500 1
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    Find more SI4850EY price and stock on Findchips.com

    SI4850EY Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4850EY Vishay TRANSISTOR - MOSFET N-CHANNEL POWER 5.2A 60V Original PDF
    Si4850EY Vishay Intertechnology N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4850EY Vishay Siliconix TRANSISTOR - MOSFET N-CHANNEL POWER 5.2A 60V Original PDF
    SI4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4850EY Vishay Telefunken R-c Thermal Model Parameters Original PDF
    SI4850EY-E3 Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    Si4850EY SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4850EY-T1 Vishay Intertechnology N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4850EY-T1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 6A 8-SOIC Original PDF
    SI4850EY-T1 Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4850EY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 6A 8-SOIC Original PDF
    SI4850EY-T1-E3 Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4850EY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 6A 8-SOIC Original PDF

    SI4850EY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI4850EY-t1g

    Abstract: si4850
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4850EY 2002/95/EC Si4850EY-T1-E3 Si4850EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4850EY-t1g si4850

    Si4850EY

    Abstract: Si4850EY-T1
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4850EY Si4850EY-T1 (with Tape and Reel)


    Original     		PDF Si4850EY Si4850EY-T1 S-03950--Rev. 26-May-03

    Untitled

    Abstract: No abstract text available
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4850EY 2002/95/EC Si4850EY-T1-E3 Si4850EY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4850EY

    Abstract: Si4850EY-T1 Si4850EY-T1-E3 60425
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • 175 °C Rated Maximum Junction Temperature • TrenchFET Power MOSFETs Pb-free


    Original     		PDF Si4850EY Si4850EY-T1 Si4850EY-T1-E3 08-Apr-05 60425

    Si4850EY

    Abstract: Si4850EY-T1 Si4850EY-T1-E3 us50-24
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • 175 °C Rated Maximum Junction Temperature • TrenchFET Power MOSFETs Pb-free


    Original     		PDF Si4850EY Si4850EY-T1 Si4850EY-T1-E3 us50-24

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4850EY www.vishay.com Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4850EY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4850EY-E3

    Abstract: 40572 Si4850EY-T1-E3 Si4850EY Si4850EY-T1
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4850EY Si4850EY—E3 (Lead Free)


    Original     		PDF Si4850EY Si4850EY--E3 Si4850EY-T1 Si4850EY-T1--E3 S-40572--Rev. 29-Mar-04 Si4850EY-E3 40572 Si4850EY-T1-E3

    si4850

    Abstract: No abstract text available
    Text: Si4850EY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4850EY S-00232--Rev. 21-Feb-00 si4850

    Si4850EY

    Abstract: No abstract text available
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4850EY S-03183--Rev. 05-Mar-01

    Si4850EY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4850EY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4850EY Si4850EY—E3 (Lead Free)


    Original     		PDF Si4850EY Si4850EY--E3 Si4850EY-T1 Si4850EY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4850EY 2002/95/EC Si4850EY-T1-E3 Si4850EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    74113

    Abstract: SI4850EY AN609 34721
    Text: Si4850EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4850EY AN609 14-Nov-05 74113 34721

    175C

    Abstract: Si4850EY
    Text: SPICE Device Model Si4850EY N-Channel Reduced Qg, Fast Switching MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Sub-circuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		PDF Si4850EY 175C

    Si4850EY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4850EY 16-Apr-01

    Si4850EY

    Abstract: Si4850EY-T1-E3 Si4850EY-T1-GE3
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4850EY 2002/95/EC Si4850EY-T1-E3 Si4850EY-T1-GE3 11-Mar-11

    Si4850EY

    Abstract: Si4850EY-T1 Si4850EY-T1-E3
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • 175 °C Rated Maximum Junction Temperature • TrenchFET Power MOSFETs Pb-free


    Original     		PDF Si4850EY Si4850EY-T1 Si4850EY-T1-E3 18-Jul-08

    SI4850EY

    Abstract: Si4850EY SPICE Device Model
    Text: SPICE Device Model Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4850EY S-60072Rev. 23-Jan-06 Si4850EY SPICE Device Model

    SI4850EY-T1-E3

    Abstract: Si4850EY Si4850EY-T1-GE3
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4850EY 2002/95/EC Si4850EY-T1-E3 Si4850EY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4850EY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4850EY S-00232--Rev. 21-Feb-00

    mathcad SEPIC

    Abstract: Input voltage 40V Output voltage 13.8V mathcad forward converter design SNVS480E mathcad INDUCTOR DESIGN LM5022 Low Side Controller for Boost and SEPIC si4850 SLF12575T-M3R2
    Text: LM5022 LM5022 60V Low Side Controller for Boost and SEPIC Literature Number: SNVS480E LM5022 60V Low Side Controller for Boost and SEPIC General Description Features The LM5022 is a high voltage low-side N-channel MOSFET controller ideal for use in boost and SEPIC regulators. It contains all of the features needed to implement single ended


    Original     		PDF LM5022 LM5022 SNVS480E mathcad SEPIC Input voltage 40V Output voltage 13.8V mathcad forward converter design SNVS480E mathcad INDUCTOR DESIGN Low Side Controller for Boost and SEPIC si4850 SLF12575T-M3R2

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU304C – April 2009 – Revised November 2011 TPS23754EVM-383 EVM: Evaluation Module for TPS23754 This User’s Guide describes the TPS23754 EVM TPS23754EVM-383 . TPS23754EVM-383 contains evaluation and reference circuitry for the TPS23754. The TPS23754 is an IEEE 802.3at compliant


    Original     		PDF SLVU304C TPS23754EVM-383 TPS23754 TPS23754 TPS23754EVM-383) TPS23754.

    016W

    Abstract: LM3430 LM3430SD LM3430SDX LM3432 mathcad boost SLF7045T-470M90-1P SLF7045T-470M90-1PF capacitor 470 uf 100v
    Text: LM3430 Boost Controller for LED Backlighting General Description Features The LM3430 is a high voltage low-side N-channel MOSFET controller. Ideal for use in a boost regulator, the LM3430 can power the LED backlight in LCD panels, such as in notebook PCs. It contains all of the features needed to implement single


    Original     		PDF LM3430 LM3430 016W LM3430SD LM3430SDX LM3432 mathcad boost SLF7045T-470M90-1P SLF7045T-470M90-1PF capacitor 470 uf 100v

    Untitled

    Abstract: No abstract text available
    Text: SM74203 www.ti.com SNOSB97A – AUGUST 2011 – REVISED APRIL 2013 60V Low Side Controller for Boost and SEPIC Check for Samples: SM74203 FEATURES DESCRIPTION • • • • • • • • • • • • The SM74203 is a high voltage low-side N-channel


    Original     		PDF SM74203 SNOSB97A SM74203