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    SI4486EY Price and Stock

    Vishay Siliconix SI4486EY-T1-E3

    MOSFET N-CH 100V 5.4A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4486EY-T1-E3 Cut Tape 1
    • 1 $1.52
    • 10 $1.52
    • 100 $1.52
    • 1000 $1.52
    • 10000 $1.52
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    SI4486EY-T1-E3 Reel 2,500
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.59742
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    SI4486EY-T1-E3 Digi-Reel 1
    • 1 $1.52
    • 10 $1.52
    • 100 $1.52
    • 1000 $1.52
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    Vishay Siliconix SI4486EY-T1-GE3

    MOSFET N-CH 100V 5.4A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4486EY-T1-GE3 Reel 2,500
    • 1 -
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    • 10000 $1.07302
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    Vishay Intertechnologies SI4486EY-T1-E3

    Trans MOSFET N-CH 100V 5.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4486EY-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4486EY-T1-E3 Reel 2,500
    • 1 -
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    • 10000 $1.33215
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    Quest Components SI4486EY-T1-E3 448
    • 1 $6
    • 10 $6
    • 100 $2.8
    • 1000 $2.6
    • 10000 $2.6
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    SI4486EY-T1-E3 448
    • 1 $6
    • 10 $6
    • 100 $2.8
    • 1000 $2.6
    • 10000 $2.6
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    New Advantage Corporation SI4486EY-T1-E3 2,500 1
    • 1 $3.85
    • 10 $3.85
    • 100 $3.63
    • 1000 $3.16
    • 10000 $3.16
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    Vishay Intertechnologies SI4486EY-T1-GE3

    Trans MOSFET N-CH 100V 5.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4486EY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4486EY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.33215
    		Buy Now

    Vishay BLH SI4486EY-T1-E3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4486EY-T1-E3 560 2
    • 1 -
    • 10 $2.912
    • 100 $2.0908
    • 1000 $1.8368
    • 10000 $1.8368
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    Find more SI4486EY price and stock on Findchips.com

    SI4486EY Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si4486EY Vishay Intertechnology N-Channel 100-V (D-S) MOSFET Original PDF
    SI4486EY Vishay Siliconix N-Channel 100-V (D-S) MOSFET Original PDF
    Si4486EY SPICE Device Model Vishay N-Channel 100-V (D-S) MOSFET Original PDF
    SI4486EY-T1 Vishay Intertechnology N-Channel 100-V (D-S) MOSFET Original PDF
    SI4486EY-T1 Vishay Siliconix N-Channel 100-V (D-S) MOSFET Original PDF
    SI4486EY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 5.4A 8-SOIC Original PDF
    SI4486EY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 5.4A 8-SOIC Original PDF

    SI4486EY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s0913

    Abstract: No abstract text available
    Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4486EY 2002/95/EC Si4486EY-T1-E3 Si4486EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s0913

    Si4486EY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4486EY N-Channel 100-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si4486EY mod16

    Si4486EY

    Abstract: Si4486EY-T1
    Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 7.9 0.028 @ VGS = 6.0 V 7.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4486EY Si4486EY-T1 (with Tape and Reel)


    Original     		PDF Si4486EY Si4486EY-T1 S-03951--Rev. 26-May-03

    SI4486EY

    Abstract: No abstract text available
    Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 7.9 0.028 @ VGS = 6.0 V 7.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4486EY Si4486EY-T1 (with Tape and Reel)


    Original     		PDF Si4486EY Si4486EY-T1 08-Apr-05

    SI4486EY

    Abstract: No abstract text available
    Text: Si4486EY New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 7.9 0.028 @ VGS = 6.0 V 7.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4486EY S-01279--Rev. 19-Jun-00

    Si4486EY

    Abstract: Si4486EY-T1-E3 Si4486EY-T1-GE3
    Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4486EY 2002/95/EC Si4486EY-T1-E3 Si4486EY-T1-GE3 18-Jul-08

    Si4486EY

    Abstract: 79A36
    Text: SPICE Device Model Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4486EY S-60075Rev. 23-Jan-06 79A36

    Si4486EY-T1-E3

    Abstract: Si4486EY Si4486EY-T1-GE3
    Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4486EY 2002/95/EC Si4486EY-T1-E3 Si4486EY-T1-GE3 11-Mar-11

    Si4486EY-T1-E3

    Abstract: Si4486EY
    Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Maximum Junction Temperature: 175 °C Rated • High-Efficiency PWM Optimized D SO-8 S 1 8


    Original     		PDF Si4486EY Si4486EY-T1-E3

    Si4486EY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4486EY 16-Apr-01

    Si4486EY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4486EY 18-Jul-08

    Si4486EY

    Abstract: Si4486EY-T1 Si4486EY-T1-E3
    Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Maximum Junction Temperature: 175 °C Rated • High-Efficiency PWM Optimized Pb-free Available


    Original     		PDF Si4486EY Si4486EY-T1 Si4486EY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4486EY 2002/95/EC Si4486EY-T1-E3 Si4486EY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    VISHAY MARKING mosfet

    Abstract: SI4486EY
    Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Maximum Junction Temperature: 175 °C Rated • High-Efficiency PWM Optimized Pb-free Available


    Original     		PDF Si4486EY Si4486EY-T1 Si4486EY-T1-E3 18-Jul-08 VISHAY MARKING mosfet

    70357

    Abstract: AN609 Si4486EY
    Text: Si4486EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4486EY AN609 19-Mar-07 70357

    SI4486EY

    Abstract: No abstract text available
    Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4486EY 2002/95/EC Si4486EY-T1-E3 Si4486EY-T1-GE3 11-Mar-11

    optocoupler pc 817

    Abstract: GHM3045X7R222K-GC LT1006S8 optocoupler 817 LT1681 LTC1698 LTC1698EGN LTC1698ES LTC1698IGN LTC1698IS
    Text: Electrical Specifications Subject to Change LTC1698 Secondary Synchronous Rectifier Controller U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1698 is a precision secondary-side forward converter controller that synchronously drives external


    Original     		PDF LTC1698 LT1681 LTC1698 LT1431 LT1680 LT1681 LT1725 LT1737 1689i optocoupler pc 817 GHM3045X7R222K-GC LT1006S8 optocoupler 817 LTC1698EGN LTC1698ES LTC1698IGN LTC1698IS

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    EFD15-3F3-A63S

    Abstract: SMA capacitor TDK Ferrite Core EFD20 PS2501-1-L sanyo WG capacitors ceramic capacitor 1uf/100v-1210 Vitramon 10uh coilcraft 1210 LM5020 sanyo capacitor wg
    Text: National Semiconductor LM5020 Power Applications Design Center, Americas May 2007 1.0 Design Specifications Inputs Output #1 Output #2 Output #3 Output #4 VinMin=9V Vout1=5V Vout2=12V Vout3=3.3V Vout4=5V VinMax=42V Iout1=0.2A Iout2=2.1A Iout3=0.5A Iout4=0.5A


    Original     		PDF LM5020 LM5020 300kHz CSP-9-111S2) CSP-9-111S2. EFD15-3F3-A63S SMA capacitor TDK Ferrite Core EFD20 PS2501-1-L sanyo WG capacitors ceramic capacitor 1uf/100v-1210 Vitramon 10uh coilcraft 1210 sanyo capacitor wg

    LM4041C1M3

    Abstract: EPC19 Zener diode 2.2X 1N4001 BAT54S Si9123 TSSOP-16 S-03639-Rev
    Text: Si9123 New Product Vishay Siliconix 500-kHz Half-Bridge DC-DC Converter With Integrated Secondary Synchronous Rectification Control FEATURES D D D D D D 12-V to 72-V Input Voltage Range D Compatible with ETSI 300 132-2 100 V, 100-ms Transients D Integrated Half-Bridge 1-A Primary Drivers


    Original     		PDF Si9123 500-kHz 100-ms 30BQ040 LEP-9080 Si4886DY DAS19 Si4486EY SMAJ12CA LM4041C1M3 EPC19 Zener diode 2.2X 1N4001 BAT54S Si9123 TSSOP-16 S-03639-Rev

    LEP-9080

    Abstract: capacitor 30 mf EPC19 FZT953 Si9122 Si9122DQ-T1 SOIC-20 TSSOP-20 si4886dy
    Text: Si9122 Vishay Siliconix 500-kHz Half-Bridge DC-DC Converter With Integrated Secondary Synchronous Rectification Drivers FEATURES D Advanced Maximum Current Control During Start-Up and Shorted Load D Low Input Voltage Detection D Programmable Soft-Start Function


    Original     		PDF Si9122 500-kHz LM7301 S-22379--Rev. 30-Dec-02 Si3552DY BAV99 LM4041CIM3-1 EPC19 LEP-9080 capacitor 30 mf EPC19 FZT953 Si9122 Si9122DQ-T1 SOIC-20 TSSOP-20 si4886dy

    EPC19

    Abstract: CS19-12 Si9122 Si9122DQ-T1 TSSOP-20 AD8206
    Text: Si9122 Vishay Siliconix 500-kHz Half-Bridge DC-DC Converter With Integrated Secondary Synchronous Rectification Drivers FEATURES D Frequency Foldback Eliminates Constant Current Tail D Advanced Maximum Current Control During Start-Up and Shorted Load D Low Input Voltage Detection


    Original     		PDF Si9122 500-kHz Network00 Si4886DY MBR0520 EPC19 LEP-9080 30BQ040 BAS19 EPC19 CS19-12 Si9122 Si9122DQ-T1 TSSOP-20 AD8206

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS