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    Vishay Intertechnologies SI9407AEY

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    SI9407AEY Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si9407AEY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9407AEY Vishay FET: P CHANNEL, 60V, 3.5A, 0.12 OHM, PACKAGE SO8 Original PDF
    Si9407AEY Vishay Intertechnology P-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SI9407AEY Vishay Siliconix P-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SI9407AEY Vishay Telefunken P-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SI9407AEY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Mosfet, P-Channel, -60, Dual, Pkg Style, SO-8 Scan PDF
    SI9407AEY-DS Vishay Telefunken DS-Spice Model for Si9407AEY Original PDF
    Si9407AEY SPICE Device Model Vishay P-Channel 50-V (D-S) MOSFET Original PDF
    SI9407AEY-T1 Vishay Intertechnology P-Channel 60-V (D-S), 175°C MOSFET Original PDF

    SI9407AEY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si9407AEY

    Abstract: No abstract text available
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    C 6090

    Abstract: AN609 Si9407AEY
    Text: Si9407AEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si9407AEY AN609 17-Jan-06 C 6090

    Si9407AEY

    Abstract: Si9407AEY SPICE Device Model
    Text: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9407AEY capacita30V, 05-Nov-99 Si9407AEY SPICE Device Model

    Si9407AEY

    Abstract: No abstract text available
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available


    Original     		PDF Si9407AEY Si9407AEY--T1 Si9407AEY--E3 08-Apr-05

    Si9407AEY

    Abstract: No abstract text available
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    27k ohm resistor

    Abstract: 27K resistor datasheet capacitor 47uF DO5022P-154 EC10QS04 RESISTOR 1210 Si9407AEY 27k capacitor capacitor 1uF 15V data sheet of resistor 33k
    Text: 13.5V to 16.5V INPUT 1 C1 0.47uF 2 R2 27k C2 27nF 10 V+ C5 4.7uF 25V X5R VL EXT FREQ MAX1846 R1 150k 300kHz 3 CS PGND 4 FB REF GND 6 P1 Si9407AEY 0.15Ohm 9 -15V @ 0.25A L1 150uH DO5022P -154 8 0.25Ohm COMP C3 56pF C4 0.1uF R3 33k 7 5 D1 EC10 QS04 C6 10uF


    Original     		PDF MAX1846 300kHz) Si9407AEY 15Ohm 150uH DO5022P 25Ohm 1846-15c 55mVpp 27k ohm resistor 27K resistor datasheet capacitor 47uF DO5022P-154 EC10QS04 RESISTOR 1210 27k capacitor capacitor 1uF 15V data sheet of resistor 33k

    Si9407AEY

    Abstract: DSA0016549
    Text: Si9407AEY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si9407AEY S-53709--Rev. 04-Aug-97 DSA0016549

    Si9407AEY

    Abstract: 99445
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si9407AEY S-99445--Rev. 29-Nov-99 99445

    Si9407AEY

    Abstract: 150CA
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available


    Original     		PDF Si9407AEY Si9407AEY--T1 Si9407AEY--E3 150CA

    Si9407AEY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9407AEY 18-Jul-08

    Si9407AEY-T1-E3

    Abstract: Si9407AEY-T1-GE3 Si9407AEY
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 18-Jul-08

    Si9407AEY-T1-E3

    Abstract: Si9407AEY Si9407AEY-T1-GE3
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 11-Mar-11

    us1035

    Abstract: Si9407AEY
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 11-Mar-11 us1035

    Si9407AEY

    Abstract: No abstract text available
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available


    Original     		PDF Si9407AEY Si9407AEY--T1 Si9407AEY--E3 S-50366--Rev. 28-Feb-05

    Si9407AEY

    Abstract: SI9407AEY-T1-E3 SI9407AEY-T1
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available


    Original     		PDF Si9407AEY Si9407AEY--T1 Si9407AEY--E3 18-Jul-08 SI9407AEY-T1-E3 SI9407AEY-T1

    Si9407AEY

    Abstract: No abstract text available
    Text: Si9407AEY Siliconix P-Channel 60-V D-S , 175_C MOSFET New Product Product Summary VDS (V) –60 60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D G 4 G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si9407AEY S-57253--Rev. 24-Feb-98

    Si9407AEY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9407AEY S-52519Rev. 12-Dec-05

    Si9407AEY

    Abstract: No abstract text available
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 –60 S S S SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si9407AEY S-99445--Rev. 29-Nov-99

    si9470

    Abstract: SLMA002 TPS40060 TPS40060PWP TPS40060PWPR TPS40061 TPS40061PWP Si947 powerPAD
    Text: TPS40060 TPS40061 8 www.ti.com SLUS543A – DECEMBER 2002 – REVISED FEBRUARY 2003 WIDEĆINPUT SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 10 V to 55 V D Input Voltage Feed-Forward Compensation D 0.5% Internal 0.7-V Reference D Programmable Fixed-Frequency, Up to 1-MHz


    Original     		PDF TPS40060 TPS40061 SLUS543A 16-Pin TPS40060 TPS40061 si9470 SLMA002 TPS40060PWP TPS40060PWPR TPS40061PWP Si947 powerPAD

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    SDCFB

    Abstract: sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101
    Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor


    Original     		PDF SC141D SI4480DY SMBJ12CA SN7474N SI4410DY-REVA SLOP114 SN7432N SN74ALS05AN SI4412DY SLVP097 SDCFB sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    48222R

    Abstract: H. Dean Venable
    Text: TPS40060 TPS40061 8 www.ti.com SLUS543 – DECEMBER 2002 WIDEĆINPUT SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 10 V to 55 V D Input Voltage Feed-Forward Compensation D 0.5% Internal 0.7-V Reference D Programmable Fixed-Frequency, Up to 1-MHz


    Original     		PDF TPS40060 TPS40061 SLUS543 TPS40061 48222R H. Dean Venable

    Untitled

    Abstract: No abstract text available
    Text: Si9407AEY VISHAY Siliconix P-Channel 60-V D-S , 175°C MOSFET New Product Product Summary VDS(V) rDS(on) (£2) -60 0.120 @VGs = -10 V 0.15 @ Ygs = ^1.5 V Id (A) ±3.5 ±3.1 Vv^V°sf6ls P 0- >N e t s s s SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF Si9407AEY S-57253â 24-Feb-98 S2SM735 DD17flflT