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    SI410 Price and Stock

    Vishay Siliconix SI4100DY-T1-E3

    MOSFET N-CH 100V 6.8A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4100DY-T1-E3 Cut Tape 28,869 1
    • 1 $1.86
    • 10 $1.184
    • 100 $1.86
    • 1000 $0.57705
    • 10000 $0.57705
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    SI4100DY-T1-E3 Digi-Reel 28,869 1
    • 1 $1.86
    • 10 $1.184
    • 100 $1.86
    • 1000 $0.57705
    • 10000 $0.57705
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    SI4100DY-T1-E3 Reel 27,500 2,500
    • 1 -
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    • 10000 $0.51927
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    RS SI4100DY-T1-E3 Bulk 2,500
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    • 10000 $1.26
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    ES Components SI4100DY-T1-E3
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    Vishay Siliconix SI4100DY-T1-GE3

    MOSFET N-CH 100V 6.8A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4100DY-T1-GE3 Digi-Reel 7,085 1
    • 1 $1.86
    • 10 $1.184
    • 100 $1.86
    • 1000 $0.57705
    • 10000 $0.57705
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    SI4100DY-T1-GE3 Cut Tape 7,085 1
    • 1 $1.86
    • 10 $1.184
    • 100 $1.86
    • 1000 $0.57705
    • 10000 $0.57705
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    SI4100DY-T1-GE3 Reel 2,500 2,500
    • 1 -
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    • 10000 $0.51927
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    New Advantage Corporation SI4100DY-T1-GE3 10,000 1
    • 1 -
    • 10 -
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    • 10000 $0.6431
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    Vishay Siliconix SI4101DY-T1-GE3

    MOSFET P-CH 30V 25.7A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4101DY-T1-GE3 Cut Tape 6,523 1
    • 1 $1.29
    • 10 $0.814
    • 100 $1.29
    • 1000 $0.38069
    • 10000 $0.38069
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    SI4101DY-T1-GE3 Digi-Reel 6,523 1
    • 1 $1.29
    • 10 $0.814
    • 100 $1.29
    • 1000 $0.38069
    • 10000 $0.38069
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    SI4101DY-T1-GE3 Reel 2,500 2,500
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    • 10000 $0.33929
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    RS SI4101DY-T1-GE3 Bulk 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.83
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    Quest Components SI4101DY-T1-GE3 70
    • 1 $0.66
    • 10 $0.55
    • 100 $0.44
    • 1000 $0.44
    • 10000 $0.44
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    SI4101DY-T1-GE3 70
    • 1 $0.66
    • 10 $0.55
    • 100 $0.44
    • 1000 $0.44
    • 10000 $0.44
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    Vishay Siliconix SI4103DY-T1-GE3

    MOSFET P-CH 30V 14A/16A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4103DY-T1-GE3 Cut Tape 2,632 1
    • 1 $1.15
    • 10 $0.723
    • 100 $1.15
    • 1000 $0.33366
    • 10000 $0.33366
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    SI4103DY-T1-GE3 Digi-Reel 2,632 1
    • 1 $1.15
    • 10 $0.723
    • 100 $1.15
    • 1000 $0.33366
    • 10000 $0.33366
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    SI4103DY-T1-GE3 Reel 2,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.29646
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    Aearo Technologies SI-410-C6050

    SCREW GROMMET M3 THERMOPLSTC BLK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI-410-C6050 Bag 1,470 1
    • 1 $0.54
    • 10 $0.41
    • 100 $0.3351
    • 1000 $0.28701
    • 10000 $0.28701
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    Find more SI410 price and stock on Findchips.com

    SI410 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI-41002 Bel Fuse SI-41002 Scan PDF
    SI-41003 Bel Fuse SI-41003 Scan PDF
    SI-41004 Bel Fuse SI-41004 Scan PDF
    SI-41005 Bel Fuse SI-41005 Scan PDF
    SI-41006 Bel Fuse SI-41006 Scan PDF
    SI4100DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 6.8A 8-SOIC Original PDF
    SI4100DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 6.8A 8-SOIC Original PDF
    SI4101DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 25.7A 8SOIC Original PDF
    SI4102DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.8A 8-SOIC Original PDF
    SI4102DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.8A 8-SOIC Original PDF
    SI4103DY-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 30V SO-8 Original PDF
    SI4104DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4.6A 8-SOIC Original PDF
    SI4104DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4.6A 8-SOIC Original PDF
    SI4108DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 20.5A 8-SOIC Original PDF
    SI-410-C1002 Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - SCREW GROMMET M3 THRMPL Original PDF
    SI-410-C6050 Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - SCREW GROMMET M3 THRMPL BLK Original PDF
    SI-410-C8002 Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - SCREW GROMMET M3 THRMPL BLU Original PDF
    SI-410-C8012 Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - SCREW GROMMET M3 THRMPL Original PDF

    SI410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si410

    Abstract: Si4104
    Text: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4104DY 2002/95/EC Si4104DY-T1-E3 Si4104DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si410 Si4104

    Si4100DY

    Abstract: Si4100DY-T1-E3 Si4100DY-T1-GE3 si4100
    Text: Si4100DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.063 at VGS = 10 V 6.8 0.084 at VGS = 6 V 5.8 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si4100DY Si4100DY-T1-E3 Si4100DY-T1-GE3 11-Mar-11 si4100

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4104DY 2002/95/EC Si4104DY-T1-E3 Si4104DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4100DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.063 at VGS = 10 V 6.8 0.084 at VGS = 6 V 5.8 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si4100DY Si4100DY-T1-E3 Si4100DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4108DY Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 75 0.0098 at VGS = 10 V 20.5 36 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS


    Original     		PDF Si4108DY Si4108DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI4100DY

    Abstract: No abstract text available
    Text: Si4100DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.063 at VGS = 10 V 6.8 0.084 at VGS = 6 V 5.8 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si4100DY Si4100DY-T1-E3 Si4100DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4104

    Abstract: SI4104DY
    Text: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • TrenchET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested RoHS COMPLIANT


    Original     		PDF Si4104DY Si4104DY-T1-E3 18-Jul-08 Si4104

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4100DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A)d 0.063 at VGS = 10 V 6.8 0.084 at VGS = 6 V 5.8 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 9 nC APPLICATIONS COMPLIANT


    Original     		PDF Si4100DY Si4100DY-T1-E3 18-Jul-08

    SI-4102

    Abstract: No abstract text available
    Text: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 11-Mar-11 SI-4102

    Si4104

    Abstract: No abstract text available
    Text: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4104DY 2002/95/EC Si4104DY-T1-E3 Si4104DY-T1-GE3 11-Mar-11 Si4104

    SI4108

    Abstract: Si4108DY Si4108DY-T1-GE3
    Text: New Product Si4108DY Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 75 0.0098 at VGS = 10 V 20.5 36 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS


    Original     		PDF Si4108DY Si4108DY-T1-GE3 08-Apr-05 SI4108

    Untitled

    Abstract: No abstract text available
    Text: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4102DY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4102DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4101DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si4101DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI-4102

    Abstract: No abstract text available
    Text: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI-4102

    SI-4102

    Abstract: AN609 Si4102DY 69297
    Text: Si4102DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4102DY AN609 13-Aug-07 SI-4102 69297

    Si4104DY

    Abstract: Si4104
    Text: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4104DY 2002/95/EC Si4104DY-T1-E3 Si4104DY-T1-GE3 18-Jul-08 Si4104

    AN609

    Abstract: Si4100DY
    Text: Si4100DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4100DY AN609 13-Aug-07

    Si4104DY

    Abstract: si4104
    Text: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • TrenchET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested RoHS COMPLIANT


    Original     		PDF Si4104DY Si4104DY-T1-E3 08-Apr-05 si4104

    Si4102DY-T1-E3

    Abstract: SI-4102 si4102 Si4102DY RG370
    Text: New Product Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d rDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.6 nC APPLICATIONS


    Original     		PDF Si4102DY Si4102DY-T1-E3 08-Apr-05 SI-4102 si4102 RG370

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4101DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 • TrenchFET Power MOSFET RDS(on) () Max. ID (A)d 0.0060 at VGS = - 10 V - 25.7 0.0080 at VGS = - 4.5 V - 22.3 Qg (Typ.) • 100 % Rg and UIS Tested


    Original     		PDF Si4101DY Si4101DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI4108

    Abstract: Si4108DY-T1-GE3 Si4108DY
    Text: New Product Si4108DY Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 75 0.0098 at VGS = 10 V 20.5 36 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS


    Original     		PDF Si4108DY Si4108DY-T1-GE3 18-Jul-08 SI4108

    C 8187

    Abstract: Si4104DY v447 Si4104
    Text: SPICE Device Model Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4104DY 18-Jul-08 C 8187 v447 Si4104

    SI-4102

    Abstract: Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 DSA0038151
    Text: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 18-Jul-08 SI-4102 DSA0038151