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    1850G Search Results

    1850G Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    UPA1850GR-9JG-E1-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
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    1850G Price and Stock

    Alpha Wire 1850-GR001

    HOOK-UP STRND 32AWG GREEN 1000'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1850-GR001 3 1
    • 1 $310.3
    • 10 $262.251
    • 100 $249.756
    • 1000 $249.756
    • 10000 $249.756
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    Onlinecomponents.com 1850-GR001
    • 1 $268.27
    • 10 $253.05
    • 100 $249.25
    • 1000 $249.25
    • 10000 $249.25
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    Master Electronics 1850-GR001
    • 1 $268.27
    • 10 $253.05
    • 100 $249.25
    • 1000 $249.25
    • 10000 $249.25
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    Alpha Wire 1850-GR005

    HOOK-UP STRND 32AWG GREEN 100'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1850-GR005 1 1
    • 1 $91.58
    • 10 $77.584
    • 100 $67.5084
    • 1000 $67.5084
    • 10000 $67.5084
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    Onlinecomponents.com 1850-GR005 2
    • 1 $78.76
    • 10 $71.28
    • 100 $65
    • 1000 $63.64
    • 10000 $63.64
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    Master Electronics 1850-GR005 2
    • 1 $78.76
    • 10 $71.28
    • 100 $65
    • 1000 $63.64
    • 10000 $63.64
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    JRH Electronics 1850-GR005

    HOOK-UP STRND 32AWG GREEN 100'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1850-GR005 1
    • 1 $217.04
    • 10 $217.04
    • 100 $217.04
    • 1000 $217.04
    • 10000 $217.04
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    JRH Electronics 1850-GR001

    HOOK-UP STRND 32AWG GREEN 1000'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1850-GR001 1
    • 1 $802.95
    • 10 $802.95
    • 100 $802.95
    • 1000 $802.95
    • 10000 $802.95
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    Fischer Elektronik GmbH & Co KG MK-LP-18-50-G

    Low profile, less than 2.7/3.1 m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MK-LP-18-50-G Bulk 10
    • 1 -
    • 10 $8.92
    • 100 $8.92
    • 1000 $8.92
    • 10000 $8.92
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    Find more 1850G price and stock on Findchips.com

    1850G Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1850-GR001 Alpha Wire Single Conductor Cables (Hook Up Wire), Cables, Wires, HOOK-UP STRND 32AWG GREEN 1000' Original PDF
    1850 GR001 Alpha Wire Cables, Wires - Single Conductor Cables (Hook-Up Wire) - HOOK-UP STRND 32AWG GREEN 1000" Original PDF
    1850-GR005 Alpha Wire Single Conductor Cables (Hook Up Wire), Cables, Wires, HOOK-UP STRND 32AWG GREEN 100' Original PDF
    1850 GR005 Alpha Wire Cables, Wires - Single Conductor Cables (Hook-Up Wire) - HOOK-UP STRND 32AWG GREEN 100" Original PDF

    1850G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FPD750SOT89

    Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
    Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD750SOT89 25dBm 39dBm FPD750SOT89 25mx1500m FPD750SOT89E: FPD750SOT89CE-BC FPD750SOT89CE-BE FPD750SOT89CE-BG BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E

    0603 footprint IPC

    Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
    Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD3000SOT89 FPD3000SOT8 30dBm 45dBm FPD3000SOT89 25mx1500m FPD3000SOT89E: FPD3000SOT89CE-BD FPD3000SOT89CE-BE FPD3000SOT89CE-BG 0603 footprint IPC FPD3000 TRANSISTOR BC 157 FPD3000SOT89E

    Untitled

    Abstract: No abstract text available
    Text: VRLA Rechargeable Battery Measures BP5.5-12RT BP5.5-12RTFR FEATURES Technology Values Innovation APPLICATION Absorbent Glass Mat technology for efficient gas recombination Maintenance free(no water topping-up required). No free acid(Non-spillable battery).


    Original     		PDF 5-12RT 5-12RTFR) Faston/-187 1850g 08lbs. ISO14001

    Transistor BC 1078

    Abstract: FPD750SOT89 FPD750SOT89CE FPD750SOT89E S 8550 transistor BC 1078 transistor
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		PDF FPD750SOT89E FPD750SOT89 FPD750SOT89CE 25mx1500m FPD750SOT89CE: FPD750SOT89PCK FPD750SOT89ESQ FPD750SOT89ESR Transistor BC 1078 FPD750SOT89 FPD750SOT89E S 8550 transistor BC 1078 transistor

    Untitled

    Abstract: No abstract text available
    Text: All Metal Fans AC - Harsh Environment 176 x 89mm 6.9” x 3.5” Frame Aluminum Die-cast Notes Impeller Metal alloy Date: 050113 Connection * Lead wires or Terminal Bearing System Environmental Protection: IP56 AC Capacitor Inductance, Thermal protection


    Original     		PDF 100MOhm 500VDC 1500VAC 1850g OA180AN-11-3 OA180AN-22-1 OA180AN-22-2 OA180AN-22-3

    FPD1500SOT89CESR

    Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
    Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89E FPD1500SOT89CE EB1500SOT89CE-BC FPD1500SOT89CESR FPD1500SOT89E MIL-HDBK-263

    FPD1500SOT89E

    Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
    Text: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		PDF FPD1500SOT89E FPD1500SOT8 FPD1500SOT89E 25mx1500m FPD1500SOT89E: FPD1500SOT89PCK FPD1500SOT89ESQ FPD1500SOT89ESR est 0114 FPD1500SOT89 MIL-HDBK-263

    FPD1500SOT89CE

    Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		PDF FPD1500SOT8 FPD1500SOT89CE FPD1500SOT89CE mx1500 42dBm FPD1500SOT89CE: FPD1500SOT89CESQ FPD1500SOT89CESR FPD1500SOT89PCK 4506 gh Transistor BJT 547 b 1850G

    Transistor AC 51 0865 75 834

    Abstract: No abstract text available
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		PDF FPD1500SOT89CE FPD1500SOT8 FPD1500SOT89CE mx1500ï FPD1500SOT89CESR FPD1500SOT89PCK FPD1500SOT89CESQ 85GHz DS111103 Transistor AC 51 0865 75 834

    FPD1500SOT89

    Abstract: FPD2250SOT89 FPD2250SOT89CE MIL-HDBK-263 FPD2250SOT FPD2250
    Text: FPD2250SOT89CE FPD2250SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency


    Original     		PDF FPD2250SOT89CE FPD2250SOT8 FPD2250SOT89CE: 31dBm 44dBm FPD2250SOT89CE 25mx1500m EB2250SOT89CE-BC FPD2250SOT89CECE FPD1500SOT89 FPD2250SOT89 MIL-HDBK-263 FPD2250SOT FPD2250

    Untitled

    Abstract: No abstract text available
    Text: Maintenance-Free Rechargeable Sealed Lead-Acid Battery BP5.5-12RT The battery is constructed by plates, separators, safety valves and container. Since the electrolyte is held by a glassmat separator and plates, the battery can use in any direction and position


    Original     		PDF 5-12RT 275mA 50volts) 523mA 059-C

    Untitled

    Abstract: No abstract text available
    Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m


    Original     		PDF FPD3000SOT89CE FPD3000SOT8 FPD3000SOT89CE 30dBm FPD3000SOT89CESQ FPD3000SOT89CESR FPD3000SOT89PCK DS111103 85GHz

    Untitled

    Abstract: No abstract text available
    Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pm x 3000Pm


    Original     		PDF FPD3000SOT89CE FPD3000SOT8 FPD3000SOT89CE 3000Pm FPD3000SOT89CESQ FPD3000SOT89PCK 85GHz FPD3000SOT89CESR DS111103

    FPD1500SOT89

    Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
    Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89CESR FPD1500SOT89CESQ FPD1500SOT89CESB DS090612 FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh

    FPD3000SOT89

    Abstract: FPD3000SOT89E InGaAs hemt biasing
    Text: FPD3000SOT89E FPD3000SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		PDF FPD3000SOT89E FPD3000SOT8 FPD3000SOT89E 25mx1500m FPD3000SOT89E: FPD3000SOT89PCK FPD3000SOT89ESQ DS100630 FPD3000SOT89 InGaAs hemt biasing

    FPD3000SOT89E

    Abstract: FPD3000SOT89CE FPD3000SOT89 micro transistor 1203 EB3000SOT89-BC
    Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD3000SOT89 FPD3000SOT8 30dBm 45dBm FPD3000SOT89 25mx1500m FPD3000SOT89E: FPD3000SOT89CE EB3000SOT89-BC FPD3000SOT89E FPD3000SOT89CE micro transistor 1203 EB3000SOT89-BC

    FPD3000SOT89

    Abstract: No abstract text available
    Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		PDF FPD3000SOT89CE FPD3000SOT8 30dBm 45dBm FPD3000SOT89CE 25mx1500m FPD3000SOT89CE: FPD3000SOT89CECE EB3000SOT89-BC FPD3000SOT89

    pseudomorphic HEMT

    Abstract: FPD1500SOT89 FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250
    Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT RoHS Compliant and Pb-Free Package: SOT89 Product Description Features The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD2250SOT89 FPD2250SOT8 FPD2250SOT89 25mx1500m 31dBm 44dBm FPD2250SOT89CE EBD2250SOT89CE-AB EBD2250SOT89CE-BB EBD2250SOT89CE-AA pseudomorphic HEMT FPD1500SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250

    Siemens QFA65

    Abstract: QFA65 Siemens room temperature sensor PTM1.2U10 siemens humidity sensor Siemens temperature sensor qfa65 4R1K CM1N1850E LG-Ni1000 relative humidity sensor circuit diagram
    Text: 1 1851P010 850 QFA65.1 Room Sensor for relative humidity and temperature Operating voltage AC 24 V Signal output DC 0.10 V for relative humidity Signal output LG-Ni 1000 passive for temperature Accuracy of ± 3 % r.h. within comfort range Use In ventilating and air conditioning plants to acquire


    Original     		PDF 1851P010 QFA65 CM1N1850E 1850G01 1850M01 Siemens QFA65 Siemens room temperature sensor PTM1.2U10 siemens humidity sensor Siemens temperature sensor qfa65 4R1K CM1N1850E LG-Ni1000 relative humidity sensor circuit diagram

    transistor bc 647

    Abstract: No abstract text available
    Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD750SOT89 25dBm 39dBm FPD750SOT89 mx1500Î FPD750SOT89E: FPD750SOT89E FPD750SOT89CE EB750SOT89CE-BC transistor bc 647

    Transistor AC 51 0865 75 730

    Abstract: No abstract text available
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm


    Original     		PDF FPD1500SOT89CE FPD1500SOT8 FPD1500SOT89CE 25Pmx1500Pm FPD1500SOT89CESQ FPD1500SOT89CESR FPD1500SOT89PCK 85GHz DS130523 Transistor AC 51 0865 75 730

    FRC connector for 20Pin

    Abstract: connector 30 pins LCD LG Philips LCM lvds connector 40 pin LCD lg 15 LG.Philips LCD circuit LC151X01 5mm RGB led 4 pin FRC connector for 20Pin f lcd LG TV 12 MHZ 0.35t crystal
    Text: LC151X01 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL Title 15.1 XGA TFT LCD SUPPLIER BUYER MODEL - LG.Philips LCD Co., Ltd. *MODEL LC151X01 MODEL C3 *When you obtain standard approval, please use the above model name without suffix


    Original     		PDF LC151X01 FRC connector for 20Pin connector 30 pins LCD LG Philips LCM lvds connector 40 pin LCD lg 15 LG.Philips LCD circuit LC151X01 5mm RGB led 4 pin FRC connector for 20Pin f lcd LG TV 12 MHZ 0.35t crystal

    D481850

    Abstract: NEC D481850 D481
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT 481850 ¿ ÎP D 8M-bit Synchronous GRAM Description The ¿¿PD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits x 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write function


    OCR Scan     		PDF uPD481850 100-pin S100GF-65-JBT juPD481850 MPD481850GF-JBT: D481850 NEC D481850 D481

    FT 4013

    Abstract: of IC 4013 n ic 4013 CI 4013 BE f 9225
    Text: w e c m > o o — The O nly Thing is Its Name! The new WSCAPOD ™ was design ed fo r federal and local law enforcement applications and is now available to the general public. This exceptional antenna features a patent pending internal design that utilizes a classic planar-f style radiator to yield the lowest profile


    OCR Scan     		PDF 890PN 1850PN 2130PN 2400PN DISC824M DISC890M FT 4013 of IC 4013 n ic 4013 CI 4013 BE f 9225