GR-326-CORE
Abstract: EIA-455-107A Telcordia 326-CORE EIA-455-171 EIA-455-13 EIA-455 GR-326 durability EIA-455-20A TIA-455-6B EIA-455-13A
Text: Product Specification 108-2358 17Jul08 Rev A LC Duplex Adapter For LC Cutouts 1. SCOPE 1.1. Content This specification covers the performance, tests and quality requirements for the Tyco Electronics LC Duplex Adapter for panels with LC cutouts. 1.2. Qualification
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17Jul08
21May08.
TIA/EIA-455-20A.
GR-326-CORE
EIA-455-107A
Telcordia 326-CORE
EIA-455-171
EIA-455-13
EIA-455
GR-326 durability
EIA-455-20A
TIA-455-6B
EIA-455-13A
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IRLI620G
Abstract: SiHLI620G
Text: IRLI620G, SiHLI620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V
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IRLI620G,
SiHLI620G
O-220
18-Jul-08
IRLI620G
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SiHLI530G
Abstract: No abstract text available
Text: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V
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IRLI530G,
SiHLI530G
O-220
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.16 Available Qg (Max.) (nC) 28 • Logic-Level Gate Drive Qgs (nC) 3.8 • RDS(on) Specified at VGS = 4 V and 5 V
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IRL530,
SiHL530
O-220
O-220
18-Jul-08
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SiHLI620G
Abstract: No abstract text available
Text: IRLI620G, SiHLI620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V
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IRLI620G,
SiHLI620G
O-220
12-Mar-07
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AN609
Abstract: Si7784DP
Text: Si7784DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,
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Si7784DP
AN609,
17-Jul-08
AN609
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Untitled
Abstract: No abstract text available
Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration RoHS* • Fast Switching COMPLIANT • Ease of Paralleling
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IRFSL11N50A,
SiHFSL11N50A
O-262)
IRFSL11N50APbF
SiHFSL11N50A-E3
IRFSL11N50A
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: SQD50N03-09 Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 30 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.010 ID (A) Configuration Single COMPLIANT AEC-Q101 RELIABILITY D TO-252
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SQD50N03-09
AEC-Q101
O-252
SQD50N03-09-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: D./CRCW.-LR Vishay Lead Pb -bearing Thick Film, Rectangular Low Value Chip Resistor FEATURES • • • • Low resistance values (down to 0.1 Ω) Suitable for current sensors and shunts SnPb contacts on Ni barrier layer Metal glaze on high quality ceramic
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D10/CRCW0402-LR
D11/CRCW0603-LR
D12/CRCany
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN P1022-QF July 2008 - Rev 17-Jul-08 Features Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package
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17-Jul-08
P1022-QF
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Untitled
Abstract: No abstract text available
Text: MMSZ4681-V to MMSZ4717-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar Zener diodes • Standard Zener voltage tolerance is ± 5 % • High temperature soldering guaranteed: 260 °C/4 x 10 s set terminals • These diodes are also available in DO-35
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MMSZ4681-V
MMSZ4717-V
DO-35
1N4681
1N4717
OT-23
MMBZ4681-V
MMBZ4717-V
AEC-Q101
2002/95/EC
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ST330-75T3MI
Abstract: ST110 ST560-25T2MI ST90-125L2MI ST470-75T4MI ST1000
Text: ST Vishay Super Tan Wet Tantalum Capacitors with Hermetic Seal FEATURES • Terminations: Standard tin/lead Sn/Pb 100 % tin (RoHS compliant) available terminations: • Very High Capacitance • 10 to 1800 µF • 25 to 125 VDC • - 55 °C to + 125 °C
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18-Jul-08
ST330-75T3MI
ST110
ST560-25T2MI
ST90-125L2MI
ST470-75T4MI
ST1000
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MALSECL00AD222HARK
Abstract: MALSECL00AD268EARK malsecl00ae268fark MALSECL
Text: ECL Vishay Roederstein Aluminum Capacitors FEATURES • Polarized aluminum electrolytic capacitors, non solid electrolyte RoHS • Extra low impedance, high ripple current COMPLIANT • Temperature up to 105 °C • RoHS compliant APPLICATIONS • SMD technology, for high mounting density
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18-Jul-08
MALSECL00AD222HARK
MALSECL00AD268EARK
malsecl00ae268fark
MALSECL
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Untitled
Abstract: No abstract text available
Text: CAT3603 3-Channel LED Driver in 3x3mm Package DESCRIPTION FEATURES The CAT3603 is a charge pump LED driver operating in either 1x LDO mode or 1.5x fractional mode regulating current through each of the 3 LED pins. Operation at a constant switching frequency of
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CAT3603
12-lead
CAT3603
MD-5017
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Untitled
Abstract: No abstract text available
Text: SQ4936EY Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 30 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.036 ID (A) Configuration RoHS • Package with Low Thermal Resistance
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SQ4936EY
AEC-Q101
SQ4936EY-T1-GE3
18-Jul-08
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IRL640
Abstract: No abstract text available
Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V
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IRL640,
SiHL640
O-220
O-220
12-Mar-07
IRL640
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AN609
Abstract: M 7401
Text: Si9933CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,
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Si9933CDY
AN609,
17-Jul-08
AN609
M 7401
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irfl640
Abstract: IRL640 part marking ab SiHL640 SiHL640-E3
Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V
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IRL640,
SiHL640
O-220
O-220
18-Jul-08
irfl640
IRL640
part marking ab
SiHL640-E3
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IRFZ44R
Abstract: SiHFZ44R SiHFZ44R-E3
Text: IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • Advanced Process Technology Ultra Low On-Resistance Available Dynamic dV/dt Rating RoHS* COMPLIANT 175 °C Operating Temperature Fast Switching Fully Avalanche Rated
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IRFZ44R,
SiHFZ44R
IRFZ44/SiHFZ44
O-220
18-Jul-08
IRFZ44R
SiHFZ44R-E3
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str g 8656
Abstract: STR G 8654 str 8656 PA 0016 PIONEER M39006/01 Marshall 8240 ST T4 0560 8233 vacuum tube VARISTORS ntc 0626 str 8644
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book wet tantalum capacitors vishay vse-db0030-0808 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0030-0808
str g 8656
STR G 8654
str 8656
PA 0016 PIONEER
M39006/01
Marshall 8240
ST T4 0560
8233 vacuum tube
VARISTORS ntc 0626
str 8644
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Untitled
Abstract: No abstract text available
Text: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
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IRL530S,
SiHL530S
SMD-220
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 1.6 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching
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IRFPF50,
SiHFPF50
O-247
O-247
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration • Repetitive Avalanche Rated 0.80 Available • Logic-Level Gate Drive
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IRL620,
SiHL620
O-220
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.16 Available Qg (Max.) (nC) 28 • Logic-Level Gate Drive Qgs (nC) 3.8 • RDS(on) Specified at VGS = 4 V and 5 V
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IRL530,
SiHL530
O-220
O-220
12-Mar-07
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