IRL640
Abstract: SiHL640 SiHL640-E3
Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRL640,
SiHL640
O-220AB
2002/95/EC
O-220AB
11-Mar-11
IRL640
SiHL640-E3
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Untitled
Abstract: No abstract text available
Text: IRL640_RC, SiHL640_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRL640
SiHL640
AN609,
CONFIGURATIp-10
4514m
1503m
9659m
8331m
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IRL640S
Abstract: SMD-220 S10 SMD MARKING
Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition
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IRL640S,
SiHL640S
SMD-220
2002/95/EC
11-Mar-11
IRL640S
SMD-220
S10 SMD MARKING
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SiHL640S
Abstract: SMD-220 s8143 smd e3a IRL640S S-81431-Rev vishay smd mosfet SMD DIODE marking AB SMD diode NC smd diode marking 12c
Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
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IRL640S,
SiHL640S
SMD-220
SMD-220
18-Jul-08
s8143
smd e3a
IRL640S
S-81431-Rev
vishay smd mosfet
SMD DIODE marking AB
SMD diode NC
smd diode marking 12c
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IRL640
Abstract: IRL640 equivalent SiHL640 SiHL640-E3
Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated
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PDF
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IRL640,
SiHL640
O-220
O-220
18-Jul-08
IRL640
IRL640 equivalent
SiHL640-E3
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Untitled
Abstract: No abstract text available
Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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PDF
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IRL640,
SiHL640
O-220AB
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRL640
Abstract: No abstract text available
Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V
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IRL640,
SiHL640
O-220
O-220
12-Mar-07
IRL640
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AN609
Abstract: IRL640S
Text: IRL640S_RC, SiHL640S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRL640S
SiHL640S
AN609,
8292m
0633m
4369m
5016m
2686m
2196m
8257m
AN609
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irfl640
Abstract: IRL640 part marking ab SiHL640 SiHL640-E3
Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V
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IRL640,
SiHL640
O-220
O-220
18-Jul-08
irfl640
IRL640
part marking ab
SiHL640-E3
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Untitled
Abstract: No abstract text available
Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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IRL640S,
SiHL640S
2002/95/EC
SMD-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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S10 SMD MARKING
Abstract: No abstract text available
Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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IRL640S,
SiHL640S
2002/95/EC
SMD-220
18-Jul-08
S10 SMD MARKING
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Untitled
Abstract: No abstract text available
Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRL640,
SiHL640
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRL640,
SiHL640
O-220AB
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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IRL640S,
SiHL640S
SMD-220
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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smd diode B3
Abstract: 1461 smd
Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition
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PDF
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IRL640S,
SiHL640S
2002/95/EC
SMD-220
11-Mar-11
smd diode B3
1461 smd
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Untitled
Abstract: No abstract text available
Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRL640,
SiHL640
O-220AB
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRL640
Abstract: No abstract text available
Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRL640,
SiHL640
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRL640
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Untitled
Abstract: No abstract text available
Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRL640,
SiHL640
2002/95/EC
O-220AB
O-220AB
11-Mar-11
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