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onsemi IRL640A MOSFET N-CH 200V 18A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL640A	Tube	77,324		1	1 $2.34 10 $2.34 100 $2.34 1000 $0.7551 10000 $0.67825	Buy Now
Rochester Electronics	IRL640A		500		1	1 $1.13 10 $1.13 100 $1.06 1000 $0.9605 10000 $0.9605	Buy Now
ComSIT USA	IRL640A		45			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRL640SPBF MOSFET N-CH 200V 17A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL640SPBF	Tube	3,335		1	1 $3.03 10 $3.03 100 $3.03 1000 $1.01473 10000 $0.9265	Buy Now
Vishay Siliconix IRL640STRRPBF MOSFET N-CH 200V 17A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL640STRRPBF	Cut Tape	3,200		1	1 $3.93 10 $2.581 100 $3.93 1000 $3.93 10000 $3.93	Buy Now
	IRL640STRRPBF	Digi-Reel	3,200		1	1 $3.93 10 $2.581 100 $3.93 1000 $3.93 10000 $3.93	Buy Now
	IRL640STRRPBF	Reel	3,200		800	1 - 10 - 100 - 1000 $1.41073 10000 $1.32375	Buy Now
Vishay Siliconix IRL640STRLPBF MOSFET N-CH 200V 17A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL640STRLPBF	Digi-Reel	3,070		1	1 $3.03 10 $1.962 100 $3.03 1000 $3.03 10000 $3.03	Buy Now
	IRL640STRLPBF	Cut Tape	3,070		1	1 $3.03 10 $1.962 100 $3.03 1000 $3.03 10000 $3.03	Buy Now
	IRL640STRLPBF	Reel	2,400		800	1 - 10 - 100 - 1000 $1.03995 10000 $0.9265	Buy Now
Quest Components	IRL640STRLPBF		13			1 $2.375 10 $2.185 100 $1.9 1000 $1.9 10000 $1.9	Buy Now
New Advantage Corporation	IRL640STRLPBF		6,400		1	1 - 10 - 100 - 1000 $1.19 10000 $1.11	Buy Now
Vishay Siliconix IRL640PBF-BE3 MOSFET N-CH 200V 17A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL640PBF-BE3	Tube	985		1	1 $3.2 10 $3.2 100 $3.2 1000 $1.0832 10000 $1	Buy Now

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IRL640 Datasheets (34)

Part	Manufacturer	Description	Datasheet Type	PDF
IRL640	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 17A TO-220AB	Original	PDF
IRL640	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRL640	International Rectifier	N-CHANNEL HEXFET Power MOSFET	Scan	PDF
IRL640	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRL640	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic Level, 200V, 17A, Pkg Style TO-220AB	Scan	PDF
IRL640	Unknown	FET Data Book	Scan	PDF
IRL640	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRL640	Samsung Electronics	N-Channel Logic Level MOSFETS	Scan	PDF
IRL640A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRL640A	Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 18A TO-220	Original	PDF
IRL640A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRL640L	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 17A TO-262	Original	PDF
IRL640L	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRL640PBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 17A TO-220AB	Original	PDF

IRL640PBF	International Rectifier	200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package	Scan	PDF
IRL640S	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRL640S	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 17A D2PAK	Original	PDF
IRL640S	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRL640S	International Rectifier	N-CHANNEL HEXFET Power MOSFET	Scan	PDF
IRL640S	International Rectifier	HEXFET Power MOSFET	Scan	PDF

IRL640 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRL640 Abstract: SiHL640 SiHL640-E3 Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRL640, SiHL640 O-220AB 2002/95/EC O-220AB 11-Mar-11 IRL640 SiHL640-E3	PDF
Untitled Abstract: No abstract text available Text: IRL640_RC, SiHL640_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRL640 SiHL640 AN609, CONFIGURATIp-10 4514m 1503m 9659m 8331m	PDF
IRL640S Abstract: SMD-220 S10 SMD MARKING Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition	Original	IRL640S, SiHL640S SMD-220 2002/95/EC 11-Mar-11 IRL640S SMD-220 S10 SMD MARKING	PDF
Untitled Abstract: No abstract text available Text: PD- 95585 IRL640SPbF Lead-Free Document Number: 91306 07/20/04 www.vishay.com 1 IRL640SPbF Document Number: 91306 www.vishay.com 2 IRL640SPbF Document Number: 91306 www.vishay.com 3 IRL640SPbF Document Number: 91306 www.vishay.com 4 IRL640SPbF Document Number: 91306	Original	IRL640SPbF 08-Mar-07	PDF
SiHL640S Abstract: SMD-220 s8143 smd e3a IRL640S S-81431-Rev vishay smd mosfet SMD DIODE marking AB SMD diode NC smd diode marking 12c Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating	Original	IRL640S, SiHL640S SMD-220 SMD-220 18-Jul-08 s8143 smd e3a IRL640S S-81431-Rev vishay smd mosfet SMD DIODE marking AB SMD diode NC smd diode marking 12c	PDF
IRL640 Abstract: IRL640 equivalent SiHL640 SiHL640-E3 Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRL640, SiHL640 O-220 O-220 18-Jul-08 IRL640 IRL640 equivalent SiHL640-E3	PDF
Untitled Abstract: No abstract text available Text: PD - 94964 IRL640PbF • Lead-Free 1 IRL640PbF 2 IRL640PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)	Original	IRL640PbF O-220AB O-220AB.	PDF
Untitled Abstract: No abstract text available Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRL640, SiHL640 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Untitled Abstract: No abstract text available Text: PD - 94964 IRL640PbF • Lead-Free www.irf.com 1 01/30/04 IRL640PbF 2 www.irf.com IRL640PbF www.irf.com 3 IRL640PbF 4 www.irf.com IRL640PbF www.irf.com 5 IRL640PbF 6 www.irf.com IRL640PbF www.irf.com 7 IRL640PbF TO-220AB Package Outline Dimensions are shown in millimeters inches	Original	IRL640PbF O-220AB O-220AB.	PDF
Untitled Abstract: No abstract text available Text: PD- 95585 IRL640SPbF Lead-Free Document Number: 91306 07/20/04 www.vishay.com 1 IRL640SPbF Document Number: 91306 www.vishay.com 2 IRL640SPbF Document Number: 91306 www.vishay.com 3 IRL640SPbF Document Number: 91306 www.vishay.com 4 IRL640SPbF Document Number: 91306	Original	IRL640SPbF 12-Mar-07	PDF
R/IRL640A Abstract: No abstract text available Text: IRL640A N-Channel Logic Level A-FET 200 V, 18 A, 180 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize	Original	IRL640A R/IRL640A	PDF
IRL640 Abstract: No abstract text available Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V	Original	IRL640, SiHL640 O-220 O-220 12-Mar-07 IRL640	PDF
AN609 Abstract: IRL640S Text: IRL640S_RC, SiHL640S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRL640S SiHL640S AN609, 8292m 0633m 4369m 5016m 2686m 2196m 8257m AN609	PDF
Untitled Abstract: No abstract text available Text: PD - 94964 IRL640PbF • Lead-Free Document Number: 91305 01/30/04 www.vishay.com 1 IRL640PbF Document Number: 91305 www.vishay.com 2 IRL640PbF Document Number: 91305 www.vishay.com 3 IRL640PbF Document Number: 91305 www.vishay.com 4 IRL640PbF Document Number: 91305	Original	IRL640PbF O-220AB 12-Mar-07	PDF

irfl640 Abstract: IRL640 part marking ab SiHL640 SiHL640-E3 Text: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V	Original	IRL640, SiHL640 O-220 O-220 18-Jul-08 irfl640 IRL640 part marking ab SiHL640-E3	PDF
Untitled Abstract: No abstract text available Text: PD- 95585 IRL640SPbF Lead-Free www.irf.com 1 07/20/04 IRL640SPbF 2 www.irf.com IRL640SPbF www.irf.com 3 IRL640SPbF 4 www.irf.com IRL640SPbF www.irf.com 5 IRL640SPbF 6 www.irf.com IRL640SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations	Original	IRL640SPbF EIA-418.	PDF
Untitled Abstract: No abstract text available Text: IRL640S A d v a n c e d Power MOSFET FEATURES B V dss = 200 V ^ D S o n = 0 .1 8 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 150°C Operating Temperature	OCR Scan	IRL640S	PDF
Untitled Abstract: No abstract text available Text: PD-9.1089 International k ?r Rectifier IRL640 HEXFET Power MOSFET • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS on Specified at Vgs=4V & 5V • Fast Switching • Ease of Paralleling • Simple Drive Requirements	OCR Scan	IRL640 O-220	PDF
R/1RL640A Abstract: No abstract text available Text: IRL640A A d van ced Power MOSFET FEATURES BV,DSS = 200 V • ■ ■ ■ ■ ■ ■ Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA Max. @ VOS= 200V	OCR Scan	IRL640A O-220 1RL640A R/1RL640A	PDF
Untitled Abstract: No abstract text available Text: Advanced Power MOSFET IRL640 FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive = 0.1 8Q ♦ Avalanche Rugged Technology ^ D S o n ♦ Rugged Gate Oxide Technology lD = 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge T O -2 2 0 ♦ Extended Safe Operating Area	OCR Scan	IRL640	PDF
IRL640A Abstract: No abstract text available Text: IRL640A A dvanced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology lD = 0.1 8f 2 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area	OCR Scan	IRL640A IRL640A	PDF
Untitled Abstract: No abstract text available Text: IRL640S A d van ced Power MOSFET FEATURES B V dss = 200 V ^D S o n = 0 .1 8 f l ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ 150°C Operating Temperature	OCR Scan	IRL640S	PDF
IRL640 Abstract: IRF1010 IRL640A 91089 Text: PD-9.1089 International H ü Rectifier IRL640 HEXFET Power M O SFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V Fast Switching Ease of Paralleling Simple Drive Requirements	OCR Scan	IRL640 O-220 T0-220 200Vas I0B83) D-6380 IRL640 IRF1010 IRL640A 91089	PDF
Untitled Abstract: No abstract text available Text: IRL640A Advanced Power MOSFET FEATURES • BVdss = 200 V Logic-Level Gate Drive ■ Avalanche Rugged Technology ^DS on = 0 .1 8 ÎÎ ■ Rugged Gate Oxide Technology lD = 18 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area	OCR Scan	IRL640A T0-220 IRLW/I640A 71b4142 003b32fl 3b321 00M1N 71b414E DD3b33D	PDF

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onsemi IRL640A

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Vishay Siliconix IRL640PBF-BE3

IRL640 Datasheets (34)

IRL640 Datasheets Context Search

IRL640

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IRL640S

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SiHL640S

IRL640

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R/IRL640A

IRL640

AN609

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irfl640

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R/1RL640A

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IRL640A

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IRL640

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