IRFSL11N50A
Abstract: No abstract text available
Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration • Repetitive Avalanche Rated 0.55 • Fast Switching • Ease of Paralleling
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IRFSL11N50A,
SiHFSL11N50A
2002/95/EC
O-262)
IRFSL11N50APbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
IRFSL11N50A
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Untitled
Abstract: No abstract text available
Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration RoHS* • Fast Switching COMPLIANT • Ease of Paralleling
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Original
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PDF
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IRFSL11N50A,
SiHFSL11N50A
O-262)
IRFSL11N50APbF
SiHFSL11N50A-E3
IRFSL11N50A
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration • Repetitive Avalanche Rated 0.55 • Fast Switching • Ease of Paralleling
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Original
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PDF
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IRFSL11N50A,
SiHFSL11N50A
O-262)
2002/95/EC
IRFSL11N50APbF
SiHFSL11N50A-E3
2011/65/EU
2002/95/EC.
2002/95/EC
|
Untitled
Abstract: No abstract text available
Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration • Repetitive Avalanche Rated 0.55 • Fast Switching • Ease of Paralleling
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Original
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PDF
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IRFSL11N50A,
SiHFSL11N50A
2002/95/EC
O-262)
IRFSL11N50APbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration RoHS* • Fast Switching COMPLIANT • Ease of Paralleling
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Original
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PDF
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IRFSL11N50A,
SiHFSL11N50A
O-262)
IRFSL11N50APbF
SiHFSL11N50A-E3
IRFSL11N50A
18-Jul-08
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IRFSL11N50A
Abstract: SiHFSL11N50A SiHFSL11N50A-E3
Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration RoHS* • Fast Switching COMPLIANT • Ease of Paralleling
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Original
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PDF
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IRFSL11N50A,
SiHFSL11N50A
O-262)
IRFSL11N50APlectual
18-Jul-08
IRFSL11N50A
SiHFSL11N50A-E3
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Untitled
Abstract: No abstract text available
Text: IRFSL11N50A_RC, SiHFSL11N50A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFSL11N50A
SiHFSL11N50A
AN609,
4581m
8195m
3666m
0172m
3823m
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Untitled
Abstract: No abstract text available
Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration • Repetitive Avalanche Rated 0.55 • Fast Switching • Ease of Paralleling
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Original
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PDF
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IRFSL11N50A,
SiHFSL11N50A
O-262)
2002/95/EC
IRFSL11N50APbF
SiHFSL11N50A-E3
11-Mar-11
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