GR-326-CORE

Abstract: EIA-455-107A Telcordia 326-CORE EIA-455-171 EIA-455-13 EIA-455 GR-326 durability EIA-455-20A TIA-455-6B EIA-455-13A
Contextual Info: Product Specification 108-2358 17Jul08 Rev A LC Duplex Adapter For LC Cutouts 1. SCOPE 1.1. Content This specification covers the performance, tests and quality requirements for the Tyco Electronics LC Duplex Adapter for panels with LC cutouts. 1.2. Qualification

IRLI620G

Abstract: SiHLI620G
Contextual Info: IRLI620G, SiHLI620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V

SiHLI530G

Contextual Info: IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V

Contextual Info: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.16 Available Qg (Max.) (nC) 28 • Logic-Level Gate Drive Qgs (nC) 3.8 • RDS(on) Specified at VGS = 4 V and 5 V

SiHLI620G

Contextual Info: IRLI620G, SiHLI620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V

AN609

Abstract: Si7784DP
Contextual Info: Si7784DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration RoHS* • Fast Switching COMPLIANT • Ease of Paralleling

Contextual Info: SQD50N03-09 Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 30 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.010 ID (A) Configuration Single COMPLIANT AEC-Q101 RELIABILITY D TO-252

Contextual Info: D./CRCW.-LR Vishay Lead Pb -bearing Thick Film, Rectangular Low Value Chip Resistor FEATURES • • • • Low resistance values (down to 0.1 Ω) Suitable for current sensors and shunts SnPb contacts on Ni barrier layer Metal glaze on high quality ceramic

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN P1022-QF July 2008 - Rev 17-Jul-08 Features Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package

Contextual Info: MMSZ4681-V to MMSZ4717-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar Zener diodes • Standard Zener voltage tolerance is ± 5 % • High temperature soldering guaranteed: 260 °C/4 x 10 s set terminals • These diodes are also available in DO-35

ST330-75T3MI

Abstract: ST110 ST560-25T2MI ST90-125L2MI ST470-75T4MI ST1000
Contextual Info: ST Vishay Super Tan Wet Tantalum Capacitors with Hermetic Seal FEATURES • Terminations: Standard tin/lead Sn/Pb 100 % tin (RoHS compliant) available terminations: • Very High Capacitance • 10 to 1800 µF • 25 to 125 VDC • - 55 °C to + 125 °C

MALSECL00AD222HARK

Abstract: MALSECL00AD268EARK malsecl00ae268fark MALSECL
Contextual Info: ECL Vishay Roederstein Aluminum Capacitors FEATURES • Polarized aluminum electrolytic capacitors, non solid electrolyte RoHS • Extra low impedance, high ripple current COMPLIANT • Temperature up to 105 °C • RoHS compliant APPLICATIONS • SMD technology, for high mounting density

Contextual Info: CAT3603 3-Channel LED Driver in 3x3mm Package DESCRIPTION FEATURES „ „ „ „ „ „ „ „ „ „ „ „ The CAT3603 is a charge pump LED driver operating in either 1x LDO mode or 1.5x fractional mode regulating current through each of the 3 LED pins. Operation at a constant switching frequency of

Contextual Info: SQ4936EY Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 30 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.036 ID (A) Configuration RoHS • Package with Low Thermal Resistance

IRL640

Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V

AN609

Abstract: M 7401
Contextual Info: Si9933CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

irfl640

Abstract: IRL640 part marking ab SiHL640 SiHL640-E3
Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V

IRFZ44R

Abstract: SiHFZ44R SiHFZ44R-E3
Contextual Info: IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • Advanced Process Technology Ultra Low On-Resistance Available Dynamic dV/dt Rating RoHS* COMPLIANT 175 °C Operating Temperature Fast Switching Fully Avalanche Rated

str g 8656

Abstract: STR G 8654 str 8656 PA 0016 PIONEER M39006/01 Marshall 8240 ST T4 0560 8233 vacuum tube VARISTORS ntc 0626 str 8644
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book wet tantalum capacitors vishay vse-db0030-0808 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

Contextual Info: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 1.6 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching

Contextual Info: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration • Repetitive Avalanche Rated 0.80 Available • Logic-Level Gate Drive

Contextual Info: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.16 Available Qg (Max.) (nC) 28 • Logic-Level Gate Drive Qgs (nC) 3.8 • RDS(on) Specified at VGS = 4 V and 5 V