Untitled
Abstract: No abstract text available
Text: SEM IC O N DU C TO R 300 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes Absolute Maximum Ratings TSTG TJ WIV Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature TC1N4148M Value Units 300 mW -65 to +150 °C +175
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DO-34
TC1N4148M)
TC1N4448M
TC1N914BM)
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DB050
Abstract: No abstract text available
Text: SEM IC O N DU C TO R 300 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes Absolute Maximum Ratings TSTG TJ WIV Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature TC1N4148M Value Units 300 mW -65 to +150 °C +175
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Original
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PDF
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DO-34
TC1N4148M)
TC1N4448M
TC1N914BM)
DB-100
DB050
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BAV19
Abstract: BAV20 BAV21
Text: BAV19, BAV20, BAV21 HIGH VOLTAGE GENERAL PURPOSE DIODES Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit WIV WIV WIV 100 150 200 V V V IF(AV) 200 mA DC Forward Current IFM 500 mA Recurrent Peak Forward Current IFRM 600 mA Non-repetitive Peak Forward Surge Current
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BAV19,
BAV20,
BAV21
BAV19
BAV20
DO-35
OT-23
BAV19
BAV20
BAV21
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DO35
Abstract: TC1N4148 TC1N4448 TC1N914B DB-036
Text: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature
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Original
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PDF
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DO-35
DB-100
DO35
TC1N4148
TC1N4448
TC1N914B
DB-036
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BAV21
Abstract: BAV19 BAV20
Text: BAV19, BAV20, BAV21 HIGH VOLTAGE GENERAL PURPOSE DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV WIV WIV 100 150 200 V V V IF(AV) 200 mA DC Forward Current IFM 500 mA Recurrent Peak Forward Current IFRM 600 mA Non-repetitive Peak Forward Surge Current
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Original
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PDF
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BAV19,
BAV20,
BAV21
BAV19
BAV20
DO-35
OT-23
BAV21
BAV19
BAV20
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DO35
Abstract: 175 WIV High Switching
Text: TAK CHEONG TCBAW76 SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature
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Original
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PDF
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TCBAW76
DO-35
DB-100
DO35
175 WIV High Switching
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BAV21
Abstract: BAV19 BAV20
Text: BAV19, BAV20, BAV21 HIGH VOLTAGE GENERAL PURPOSE DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV WIV WIV 100 150 200 V V V IF(AV) 200 mA DC Forward Current IFM 500 mA Recurrent Peak Forward Current IFRM 600 mA Non-repetitive Peak Forward Surge Current
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Original
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PDF
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BAV19,
BAV20,
BAV21
BAV19
BAV20
DO-35
OT-23
BAV21
BAV19
BAV20
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SEM 2006
Abstract: No abstract text available
Text: TAK CHEONG SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature
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Original
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PDF
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DO-35
TC1N914B
100mA
TC1N4148/TC1N4448/TC1N914B
SEM 2006
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sem 304
Abstract: SEM 2006 JEDEC do-204
Text: TAK CHEONG 300 mW DO-34 Hermetically Sealed Glass Switching Diodes Absolute Maximum Ratings PD TSTG TJ WIV AXIAL LEAD DO34 TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature Value Units
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PDF
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DO-34
TC1SS133M
DO-204)
500nA
100mA
TC1SS133M
DO-34
sem 304
SEM 2006
JEDEC do-204
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SEM 2006
Abstract: No abstract text available
Text: TAK CHEONG TCBAW76 SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature
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Original
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PDF
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DO-35
100mA
TCBAW76
SEM 2006
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SEM 2006
Abstract: JEDEC do-204 do-34 TC1N4148M
Text: TAK CHEONG SEM IC O N DU C TO R 500 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes Absolute Maximum Ratings TSTG TJ WIV Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature TC1N4148M Value Units 500 mW -65 to +200
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Original
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PDF
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DO-34
TC1N4148M)
TC1N4448M
TC1N914BM)
TC1N914BM
TC1N4148M,
TC1N4148M
TC1N4448M,
100mA
SEM 2006
JEDEC do-204
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N3064, 1N4305, 1N4454 SWITCHING RECTIFIERS MAXIMUM RATINGS Rating Symbol Value Unit WIV 50 V Average rectified current IO 100 mA Forward current steady state IF 300 mA Recurrent peak forward current if 400 mA if surge 1.0 4.0 A Power dissipation
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1N3064,
1N4305,
1N4454
DO-35
MIL-PRF-19500,
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MINI-MELF DIODE BLACK CATHODE
Abstract: No abstract text available
Text: TAK CHEONG SEM IC O N DU C TO R 500mW QUADRO Mini-MELF Hermetically Sealed Glass Fast Switching Diodes Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature
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Original
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PDF
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500mW
MINI-MELF DIODE BLACK CATHODE
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AW76
Abstract: No abstract text available
Text: TAK CHEONG TCBAW76 SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature
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Original
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PDF
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DO-35
AW76
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Untitled
Abstract: No abstract text available
Text: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature
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Original
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PDF
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DO-35
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DSAIH00025335
Abstract: 1N464A
Text: B K C INTERNATIONAL 03E D | llT'HflB OQODSVt M 7 ~ -4 / GENERAL PURPOSE HIGH CONDUCTANCE DIODES 1N462A 1N463A ABSOLUTE MAXIMUM RATINGS • VF • lH 1.0 V @ 100 mA 500 nA @ WIV Temperatures -65 °C to +200 °C +175 °C +260 °C Storage Temperature Range Maximum Junction Operating Temperature
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OCR Scan
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PDF
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1N462A
1N463A
1N461A
500mA
600mA
1N464A
200mA
DSAIH00025335
1N464A
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IRFZ24A
Abstract: No abstract text available
Text: IRFZ24A Advanced Power MOSFET FEATURES BVdss = 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175*0 Operating Temperature ■ Lower Leakage Current : 10 p A M a x @ VDS= 60V
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OCR Scan
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PDF
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IRFZ24A
IMTZ24A
IRFZ24A
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IRFS520A
Abstract: T0-220F diode cm 72a
Text: IRFS520A Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge — ^DS on = lD = ■ Extended Safe Operating ■ 175°C ■ Lower Leakage Current:10 H A (Max.) @ V DS = 100V
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OCR Scan
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PDF
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IRFS520A
T0-220F
IRFS520A
T0-220F
diode cm 72a
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1N461A
Abstract: 1N462A 1N463A 1N464A 1N463 175 WIV
Text: B K C IN TE RNA TIO NA L 03E D | llT'HflB OQODSVt 4 7~ -0 / GENERAL PURPOSE HIGH CONDUCTANCE DIODES 1N462A 1N463A ABSOLUTE MAXIMUM RATINGS • VF • lH 1.0 V @ 100 mA 500 nA @ W IV Temperatures -65 °C to +200 °C +175 °C +260 °C Storage Temperature Range
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OCR Scan
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PDF
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N461A
1N462A
1N463A
1N461A
1N462A
1N463A
1N464A
200mA
500mA
1N464A
1N463
175 WIV
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Untitled
Abstract: No abstract text available
Text: Flatpack Quadrature Hybrid 175-350 MHz • Octave Bandwidth ■ Low VSW R — 1.2:1 Typical JH-136 C p .O PIN 0.015 DIA ¿0 .00 5 <0.38 *0.13 • a PLACES Guaranteed Specifications4 From - 55°C to +85°C) D im e n s io n s in ( ) are in m m. Frequency Range
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OCR Scan
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PDF
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JH-136
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DSAIH0002537
Abstract: No abstract text available
Text: B K C INTERNATIONAL □ 3E D I 1 1 7 ^ 0 3 □□□□274 D j p HIGH CONDUCTANCE LOW LEAKAGE DIODES T -ô h ô f 1N3595 1N6099 ABSOLUTE MAXIMUM RATINGS • Bv • Vp 150 V MIN @ 100 (iA 1.0 V @ 200 mA Temperatures -65 °C to +200 °C +175 °C +260 °C Storage Temperature Range
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OCR Scan
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PDF
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1N3595
1N6099
DO-35
DSAIH0002537
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1N4009
Abstract: to3a
Text: B K C INTERNATIONAL □ 3E D I 117^ 03 □ □ Ü 0EÖ 3 1 |"~ T -Ô 3 - â<f ULTRA HIGH SPEED DIODES 1N4009 A B S O LU T E MAXIMUM RATINGS ‘ Tm • Bv 20 ns 35 V MIN <§>5 |iA Temperatures -65 °C to +200 °C +175°C +260 °C Storage Temperature Range
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OCR Scan
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PDF
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1N4009
DO-35
1N4009
to3a
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1S921
Abstract: 1S920 1s922 equivalent 1s923
Text: FAIRCHILD SEMICON DUC TO R A4 DEr| 34bTb74 DDS7S0D A 1S920/921/922/923 FDLL920/921/922/923 FAIRCHILD A Schlumberger Company General Purpose Diodes _ T - ° \ ' o C \ • V p . . . 1.2 MAX @ 200 mA • Ir . . 100 nA (MAX) @ RATED WIV ABSOLUTE MAXIMUM RATINGS (Note 1)
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OCR Scan
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PDF
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34bTb74
1S920/921/922/923
FDLL920/921/922/923
DO-35
LL-34
1S921
1S920
1s922 equivalent
1s923
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1n457
Abstract: n456a DSAIH00025333 1N456A
Text: B K C INTERNATIONAL □ 3E D I 117^^03 □□□□275 2 7 - - Ó / - Ó LOW LEAKAGE DIODES 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A ABSOLUTE MAXIMUM RATINGS • l„ • C 25 nA @ WIV 6.0 pF Temperatures Storage Temperature Range Maximum Junction Operating Temperature
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OCR Scan
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PDF
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1N456
1N456A
1N458A
1N457
1N459
1N457A
1N459A
1N458
500mW
1N456/A
n456a
DSAIH00025333
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