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    1S921

    Abstract: 1S920 1s922 equivalent 1s923
    Text: FAIRCHILD SEMICON DUC TO R A4 DEr| 34bTb74 DDS7S0D A 1S920/921/922/923 FDLL920/921/922/923 FAIRCHILD A Schlumberger Company General Purpose Diodes _ T - ° \ ' o C \ • V p . . . 1.2 MAX @ 200 mA • Ir . . 100 nA (MAX) @ RATED WIV ABSOLUTE MAXIMUM RATINGS (Note 1)


    OCR Scan     		PDF 34bTb74 1S920/921/922/923 FDLL920/921/922/923 DO-35 LL-34 1S921 1S920 1s922 equivalent 1s923

    IRF510

    Abstract: Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF510-513 IRF511 IRF512
    Text: 3469674 FAIRCHILD SEMICONDUCTOR f l 14 D e I 3 4 ^ 7 4 DGETTBM fl I IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF IRF510-513 MTP4N08/4N10 O-220AB IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF510-513 IRF510 Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF511 IRF512

    34B SOT

    Abstract: NDT455N
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDT455N NDT455N OT-223 34B SOT

    N55C

    Abstract: NDB6060 NDB6060L NDP6060L
    Text: April 1996 N N D P6060L / N D B 6060L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T h e se logic le v e l N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field effe c t tra n s is to rs are p ro d u c e d u sin g


    OCR Scan     		PDF NDP6060L NDB6060L NDP6060LRev. NDB6060LRev. 34bTb74 N55C NDB6060 NDB6060L

    Untitled

    Abstract: No abstract text available
    Text: F A IR C H IL D Ju,y1999 SEMICONDUCTOR tm FDG6304P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    OCR Scan     		PDF y1999 FDG6304P FDG6304P 34bTb74 0Pb28c

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR ru NC7ST32 TinyLogic 2-Input OR Gate General Description Features The NC7ST32 is a single 2-Input high performance CMOS OR Gate, with TTL-compatible inputs. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation. ESD protection diodes inherently guard


    OCR Scan     		PDF NC7ST32 NC7ST32 MM74HCT

    Untitled

    Abstract: No abstract text available
    Text: National S e m i c o n d u c t o r 1' June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m ode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDT454P NDT454P OT-223 34bTb74

    8s00

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm NC7ST00 TinyLogic 2-Input NAND Gate General Description Features The NC7STOO is a single 2-Input high performance CMOS NAND Gate, with TTL-compatible inputs. Advanced Silicon Gate CMOS fabrication assures high speed and low power


    OCR Scan     		PDF NC7ST00 MM74HCT 34bTb 8s00

    Untitled

    Abstract: No abstract text available
    Text: September 1996 N ational S e m i c o n d u c t o r 1' NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features P ow er SO T lo gic level N-C hannel e n h a n ce m e n t m o d e fie ld e ffect tra n s is to rs are pro d u ce d using


    OCR Scan     		PDF NDT3055L OT-223 34bTb74

    Untitled

    Abstract: No abstract text available
    Text: M ay 1994 N NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    OCR Scan     		PDF NDP410A NDP410AE NDP410B NDP410BE NDB410A NDB410AE NDB410B NDB410BE NDP410

    Untitled

    Abstract: No abstract text available
    Text: September 1996 National S e m i c o n d u c t o r 1' NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDT3055 OT-223 34bTb74

    MPSL08

    Abstract: 2N5224 schlumberger 5225 2N5226 2N5223 2N5225 2N5227 2N5228 2N5224 current gain mps-l08
    Text: FAIRCHILD SEMICON DUC TO R s 3469674 F A IR C H IL D f l4 84D SEM ICONDUCTOR • • • 27596 " |~ D N P N S m all Signal G en eral Purpose A m p lifie r & O sc illa to r A Schlumberger Company • 3 2N5223/FTS05223 FAIRCHILD • • D eT J PACKAGE 2N5223


    OCR Scan     		PDF 275cit] 2N5223/FTS05223 2N/FTS05227 100MHz MPSL08 2N5224 schlumberger 5225 2N5226 2N5223 2N5225 2N5227 2N5228 2N5224 current gain mps-l08

    PN4121

    Abstract: pn4122 PN3569 PN3644 FTS03644 FTS03645 PN3645
    Text: TFAIRCHXLD S EMI CONDUCTOR 3469674 FAIRCH ILD A4 DE j j 3*-1b T b 74 S E MI CO ND UC T OR g^CrS S a ìt 5 84D D D2 743 D 27430 D PN3644/FTS03644 PN3645/FTS03645 A Schlumberger Company PNP Small Signal General Purpose Am plifiers & Switches Vceo . . . -45 V Min (PN /FTS03644), 60 V (Min)


    OCR Scan     		PDF 645/FTS0364S O-236AA/AB O-236AA/AB PN3569 PN4121 pn4122 PN3644 FTS03644 FTS03645 PN3645

    2N2907A FAIRCHILD SEMICONDUCTOR

    Abstract: 2N2904 transistor TO92 2N3053 characteristic curves Fairchild, 2N3019 2N2904 FAIRCHILD SEMICONDUCTOR 2N2907A fairchild FTS02907A TRANSISTOR 2n3108 fairchild 2n3019 transistor 2N 3020
    Text: FAIRCHILD SEMICONDUCTOR A4 DE 3 4 b cIL,7M 00S7S3L: 7 3 4 69 67 4 F A I R C H I L D S E M I C O N D U C T O R 84D 27536 2N2710/FTS02710 ^ 3ir^ NPN Small Signal High Speed Low Power Saturating Switch Transistor F A IR C H IL D A Schlumberger Company PACKAGE


    OCR Scan     		PDF 34bcit174 2N2710/FTS02710 2N2710 FTS02710 O-236AA/AB 2N3107) 2N3108) 2N3109) 140kHz 2N2907A FAIRCHILD SEMICONDUCTOR 2N2904 transistor TO92 2N3053 characteristic curves Fairchild, 2N3019 2N2904 FAIRCHILD SEMICONDUCTOR 2N2907A fairchild FTS02907A TRANSISTOR 2n3108 fairchild 2n3019 transistor 2N 3020

    MPS A56 transistor

    Abstract: MPS 3117 T164 MPS A13 transistor A42 MPSA42 NPN FTSOA12 MPSA10 MPSA12 MPSA13 Schlumberger
    Text: FAIRCHILD SE MI CO ND UC TO R fi4 . . . 40 V T ' #X P \-'V A IVi^SAiy NPN A m plifier Transistor A Schlum berger C om pany Vceo |g 34^^1,74 D0S73TE -=| y P S A IO F A IR C H IL D dT Min PACKAGE MPSA10 TO-92 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures


    OCR Scan     		PDF D0S73TE MPSA10 E74DE MPS A56 transistor MPS 3117 T164 MPS A13 transistor A42 MPSA42 NPN FTSOA12 MPSA12 MPSA13 Schlumberger

    2N6760

    Abstract: MF2400 2N6759 E7A04
    Text: ñ4 3469674 FAIRCHILD SEMICONDUCTOR uni n i dËT| 3 4 b T t , 7 4 □ □ 2 7 A D D 84D 27800 D 2N6759/2N6760 N-Channel Power MOSFETs, 5.5 A, 350 V/400 V F a ir c h ild A Schlum berger Com pany _ Power And Discrete Division D escription These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF 34tTb74 2N6759/2N6760 T-39-11 2N6759 2N6760 2N6760 E7A04 MF2400

    fairchild 2N2222A

    Abstract: 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222
    Text: •FAIRCHILD SEMICONDUCTOR 7 fl4 DlF| 3 4 ^ b 7 4 ~ 0 0 E 7 S 0 4 S 3469674 FAIRCHILD SEMICONDUCTOR m m as&i\ f a i^ urn ram h i^ 84D 27504 2N 718A 2N 1613 T - ^ - D H ¿3 A Schlumberger Company NPN Small Signal General Purpose Am plifiers • • Vceo . . . 32 V Min


    OCR Scan     		PDF QDE75D4 2N718A 2N1613 fairchild 2N2222A 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR NC7ST86 TinyLogic™ 2-Input Exclusive-OR Gate General Description Features The NC7ST86 is a single 2-Input high performance CMOS Exclusive-OR Gate, with TTL-compatible inputs. Advanced Silicon Gate CMOS fabrication assures high speed and low


    OCR Scan     		PDF NC7ST86 NC7ST86 MM74HCT

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm 74ACQ240 • 74ACTQ240 Quiet Series Octal Buffer/Line Driver with 3-STATE Outputs General Description Features The ACQ /A CTQ 240 is an inverting octal buffer and line driver designed to be employed as a memory address driver,


    OCR Scan     		PDF 74ACQ240 74ACTQ240

    Untitled

    Abstract: No abstract text available
    Text: s e m ic o n d u c t o r NC7SZ38 Tiny Logic™ UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-lnput NAND Gate with open drain output stage from Fairchild's Ultra High Speed Series of TinyLogic™ in the space saving SOT23 package. The de­


    OCR Scan     		PDF NC7SZ38 NC7SZ38 8Q-534 2736-996Q 34bTb74

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR ,u NC7SZ00 TinyLogic UHS 2-Input NAND Gate General Description Features The NC7SZOO is a single 2-Input NAND Gate from Fair­ child's Ultra High Speed Series of TinyLogic™ in the space saving SOT23 package. The device is fabricated with ad­


    OCR Scan     		PDF NC7SZ00 34bTb74 03315A

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTO R ru NC7S00 TinyLogic 2-Input NAND Gate General Description Features The NC7S00 is a single 2-Input high performance CMOS NAND Gate in the SOT23 package. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad Vcc range. ESD protection diodes in­


    OCR Scan     		PDF NC7S00 NC7S00 34bRb74

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor MILITARY DATA SHEET Original Creation Date: 03/12/96 Last Update Date: 07/30/96 Last Major Revision Date: 03/12/96 MN54F64-X REV 1A0 4—2—3-2— INPUT AND-OR-INVERT GATE General Description This device contains gates configured to perform a 4-2-3-2 input AND-OR-INVERT function.


    OCR Scan     		PDF MN54F64-X 54F64 54F64DMQB 54F64FMQB S4F64LMQB MIL-STD-883, 34bTb74 0-55/125C

    Untitled

    Abstract: No abstract text available
    Text: NDT452AP P-Channel Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel enhancem ent mode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    OCR Scan     		PDF NDT452AP NDT452AP OT-223 34bTb74