HN3C17 Search Results

HN3C17 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HN3C17F		Toshiba	Transistor Silicon NPN Epitaxial Planar Type		Scan	PDF
HN3C17F		Toshiba	RF 2-in-1 Hybrid Transistors		Scan	PDF
HN3C17FU		Toshiba	Silicon NPN epitaxial planar type transistor for VHF-UHF band low noise amplifier applications		Scan	PDF
HN3C17FU		Toshiba	Transistor Silicon NPN Epitaxial Planar Type		Scan	PDF

HN3C17 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK3075 equivalent Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066 Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz	Original	PDF	2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Untitled Abstract: No abstract text available Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : \|S2l e\|2 = 9-0dB (f=2GHz)	OCR Scan	PDF	HN3C17FU 16GHz
HN3C17 Abstract: No abstract text available Text: HN3C17F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C17F Unit in mm VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS 2.8 CHIP : fT = 16GHz series • Including Two Devices in SM6 (Super Mini Type with 6 Leads) + 0.2 0.3 - + 0.2 1 .6 -0 .1	OCR Scan	PDF	HN3C17F 16GHz HN3C17
HN3C17FU Abstract: No abstract text available Text: TOSHIBA HN3C17FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU V H F -U H F LO W NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : \|S2l e\|2= 9.0dB (f=2GHz) M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	PDF	HN3C17FU HN3C17 16GHz HN3C17FU
Untitled Abstract: No abstract text available Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : \|S2l e\|2 = 9-0dB (f=2GHz)	OCR Scan	PDF	HN3C17FU 16GHz
HN3C17F Abstract: TOSHIBA IC 2803 E33 marking Text: TOSHIBA TENTATIVE HN3C17F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C 17F VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Including Two Devices in SM6 (Super Mini Type with 6 Leads) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	HN3C17F 16GHz HN3C17F TOSHIBA IC 2803 E33 marking
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE HN3C17FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : \|S2 l e\|2= 9.0dB (f=2GHz) 2.1 +0.1 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	PDF	HN3C17FU 16GHz S21el2
HN3C17FU Abstract: No abstract text available Text: TO SH IBA TENTATIVE HN3C17FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : \|S2l e\|2= 9.0dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	PDF	HN3C17FU N3C17 16GHz HN3C17FU
Silicon NPN Epitaxial Planar Type Abstract: No abstract text available Text: TOSHIBA HN3C17FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU V H F -U H F LO W NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : \|S2l e\|2= 9.0dB (f=2GHz) M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	PDF	HN3C17FU HN3C17 16GHz Silicon NPN Epitaxial Planar Type