EIA-364-38
Abstract: 114-13120 connector "EIA-364-98" JESD22-B102D EIA-364-13 EIA-364-27 EIA-364-28 EIA-364-98 Testing SFP mechanical
Text: Product Specification 108-2364 16Nov09 Rev A Single Port SFP+ Cages, Ganged SFP+ Cages, and SFP+ Copper Module Direct Attach Cable Assembly 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics Single
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16Nov09
21Sep09.
EIA-364-38
114-13120
connector "EIA-364-98"
JESD22-B102D
EIA-364-13
EIA-364-27
EIA-364-28
EIA-364-98
Testing
SFP mechanical
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL
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UL94-V0
E323964
16-NOV-09
06-OCT-09
26-DEC-07
19-DEC-06
06-JUN-06
24-APR-06
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
E323964
16-NOV-09
03-MAR-08
26-DEC-07
19-DEC-06
21-JUN-04
09-MAR-99
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Si2333CDS
Abstract: Si2333CDS-T1-GE3 Si2333C
Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition
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Si2333CDS
2002/95/EC
O-236
OT-23)
Si2333CDS-T1-E3
Si2333CDS-T1-GE3
11-Mar-11
Si2333C
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SiHP22N60S-E3
Abstract: SiHP22N60S
Text: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability
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SiHP22N60S
O-220
2002/95/EC
SiHP22N60S-E3
18-Jul-08
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BD11
Abstract: No abstract text available
Text: Outline Dimensions Vishay High Power Products TO-220AB, TO-220AC DIMENSIONS FOR TO-220AB in millimeters and inches B A Seating plane ØP A A1 E E A Thermal pad Q H1 H1 4 D2 D θ Detail B D1 1 2 L1 3 2 E1 (3) D C D C C View A - A L A C Sheet 2 A2 2xe 0.015 M B A M C
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O-220AB,
O-220AC
O-220AB
5M-1994
16-Nov-09
BD11
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Multilayer Ceramic Dipped Axial and Radial Capacitors
Abstract: 1C20X7R104K050 VISHAY MARKING CODE
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book mlcc dipped a xial and radial vishay vse-db0074-0911 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0074-0911
Multilayer Ceramic Dipped Axial and Radial Capacitors
1C20X7R104K050
VISHAY MARKING CODE
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GLZ52
Abstract: rotary head FO-55116-C
Text: 11 12 FO-55116-C 10 9 8 7 6 5 2 3 4 1 HONEYWELL PART NUMBER REV DOCUMENT C 0067767 - CHANGED BY MBN CHECK 28JUL10 CMH H H WGL A SPECIALS G G BODY TYPE CODE A EN50041, METAL DIN ENCLOSURE SOFTWARE VERSION CODE 1 VERSION 1 ANTENNA TYPE CODE RF CODE 2.4 GHz;
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FO-55116-C
28JUL10
EN50041,
GLZ52
rotary head
FO-55116-C
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SI4310
Abstract: Si4310BDY
Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21
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Si4310BDY
2002/95/EC
SO-14
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SI4310
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Untitled
Abstract: No abstract text available
Text: Si4340DY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
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Si4340DY
2002/95/EC
SO-14
Si4340DY-T1-E3
Si4340DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PA 6T COLOR: BLACK CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
E323964
02-APR-14
11-APR-12
16-NOV-09
15-OCT-09
26-DEC-07
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SI4176DY
Abstract: No abstract text available
Text: New Product Si4176DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4176DY
2002/95/EC
Si4176DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUP90N08-6m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0068 at VGS = 10 V 90d 75 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
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SUP90N08-6m8P
2002/95/EC
O-220AB
SUP90N08-6m8P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si2333cds
Abstract: No abstract text available
Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition
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Si2333CDS
2002/95/EC
O-236
OT-23)
Si2333CDS-T1-E3
Si2333CDS-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition
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Si2333CDS
2002/95/EC
O-236
OT-23)
Si2333CDS-T1-E3
Si2333CDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
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JEDEC tray standard dimension
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
E323964
612-212-R
15-MAR-
612-R
JEDEC tray standard dimension
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si7619
Abstract: Si7619DN
Text: SPICE Device Model Si7619DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7619DN
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si7619
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Untitled
Abstract: No abstract text available
Text: Si4906DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 VDS (V) N-Channel 40 Qg (Typ.) 6.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4906DY
2002/95/EC
Si4906DY-T1-E3
Si4906DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si4340DY-T1-E3
Abstract: Si4340DY
Text: Si4340DY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
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Si4340DY
2002/95/EC
SO-14
18-Jul-08
Si4340DY-T1-E3
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K220J10C0GF5
Abstract: K104K10X7RF5 K-103-K-10-X7R-F-5-3-H-5 mono-kap k682 K822 K104Z10Y5VF5 K330J10C0GH5 K103K10X7RH5 k333k10x7rf5.h5
Text: Mono-Kap Vishay Multilayer Ceramic Dipped Radial K10 Capacitors DIMENSIONS Wb T Wb H H SH SH L L 5.0 ± 0.8 2.5 ± 0.8 L2 H5 Component outline for lead spacing 2.5 mm ± 0.8 mm straight leads Component outline for lead spacing 5.0 mm ± 0.8 mm (flat bent leads)
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18-Jul-08
K220J10C0GF5
K104K10X7RF5
K-103-K-10-X7R-F-5-3-H-5
mono-kap
k682
K822
K104Z10Y5VF5
K330J10C0GH5
K103K10X7RH5
k333k10x7rf5.h5
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Untitled
Abstract: No abstract text available
Text: SUP90N08-6m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0068 at VGS = 10 V 90d 75 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
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SUP90N08-6m8P
2002/95/EC
O-220AB
SUP90N08-6m8P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4340DY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
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Si4340DY
2002/95/EC
SO-14
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
E323964
27-NOV-07
19-DEC-06
21-JUN-04
09-MAR-99
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MIL-T-10727
Abstract: No abstract text available
Text: 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 2 3 R E LE A S E D FOR PU B LIC A T IO N BY TYCO ELEC TR O N IC S CO RPO RATIO N . - ,- LOC A LL R IG H T S R E S E R V E D . RE VIS IO NS D IS T D E S C R IP T IO N DWN REVISED PER ECO 0 9 - 0 2 5 4 9 4
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OCR Scan
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-28UNP-2B
MIL-T-10727
QQ-N-290.
00779CW96093
31MAR2000
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