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    Vishay Siliconix SI4176DY-T1-GE3

    MOSFET N-CH 30V 12A 8SO
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    SI4176DY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4176DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A SO8 Original PDF
    SI4176DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A 8-SOIC Original PDF

    SI4176DY Datasheets Context Search

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    AN609

    Abstract: a/STR+65653 SI4176DY
    Text: Si4176DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4176DY AN609, 10-Nov-09 AN609 a/STR+65653

    SI4176DY

    Abstract: No abstract text available
    Text: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4176DY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4176DY

    si4176

    Abstract: SI4176DY
    Text: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4176DY-T1-E3 2002/95/EC 11-Mar-11 si4176 SI4176DY

    SI4176DY

    Abstract: No abstract text available
    Text: New Product Si4176DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4176DY 2002/95/EC Si4176DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI4176DY

    Abstract: No abstract text available
    Text: New Product Si4176DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4176DY 2002/95/EC Si4176DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si4176

    Abstract: Si4176DY-T1-GE3 si41
    Text: New Product Si4176DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4176DY 2002/95/EC Si4176DY-T1-GE3 18-Jul-08 si4176 si41

    SI4176DY

    Abstract: No abstract text available
    Text: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4176DY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI4176DY

    SI4176DY

    Abstract: No abstract text available
    Text: New Product Si4176DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4176DY 2002/95/EC Si4176DY-T1-GE3 11-Mar-11