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    SI4310 Search Results

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    SI4310 Price and Stock

    ASI-EZ ASI431020

    Thermocouple Terminal Block, DIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ASI431020 30 1
    • 1 $6.28
    • 10 $6.28
    • 100 $6.28
    • 1000 $6.28
    • 10000 $6.28
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    Vishay Siliconix SI4310BDY-T1-E3

    MOSFET 2N-CH 30V 7.5A 14SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4310BDY-T1-E3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.54045
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    Vishay Intertechnologies SI4310BDY-T1-E3

    TRANS MOSFET N-CH 30V 7.5A/9.8A 8PIN SO - Tape and Reel (Alt: SI4310BDY-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4310BDY-T1-E3 Reel 2,500
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    • 10000 $1.6864
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    SI4310 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI43-100 Xinwang Electronics SMT Power Inductor Original PDF
    SI43-101 Xinwang Electronics SMT Power Inductor Original PDF
    SI4310BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 7.5A 14SOIC Original PDF
    Si4310DY Vishay Intertechnology Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Original PDF
    Si4310DY SPICE Device Model Vishay Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Original PDF

    SI4310 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4310DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V


    Original
    PDF Si4310DY SO-14 S-20828--Rev. 17-Jun-02

    SI4310

    Abstract: Si4310BDY
    Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si4310BDY 2002/95/EC SO-14 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI4310

    Si4310DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4310DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4310DY 18-Jul-08

    CH1155

    Abstract: Si4310DY
    Text: SPICE Device Model Si4310DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4310DY S-51868Rev. 12-Aug-05 CH1155

    max3572

    Abstract: No abstract text available
    Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si4310BDY 2002/95/EC SO-14 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 max3572

    Si4310BDY

    Abstract: No abstract text available
    Text: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14


    Original
    PDF Si4310BDY SO-14 08-Apr-05

    Si4310BDY

    Abstract: No abstract text available
    Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si4310BDY 2002/95/EC SO-14 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si4310BDY 2002/95/EC SO-14 18-Jul-08

    Si4310BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4310BDY 18-Jul-08

    CI 3060 elsys

    Abstract: Si4310BDY
    Text: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14


    Original
    PDF Si4310BDY SO-14 18-Jul-08 CI 3060 elsys

    Si4310DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4310DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4310DY 0-to-10V 04-Sep-02

    Si4310BDY

    Abstract: No abstract text available
    Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si4310BDY 2002/95/EC SO-14 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SMT Power Inductor SI 43 Type Features „ „ „ „ „ „ „ „ RoHS compliant. Low profile 2.5mm max.height SMD type. Unshielded. Self-leads,suitable for high density mounting. High energy storage and low DCR Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,


    Original
    PDF 098Max 100KHz SI43-1R0L SI43-1R2L SI43-1R5L SI43-1R8L SI43-2R2L 100uH.