sgsp531
Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P
Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92
|
Original
|
VN0640N2
TX106
IRF712
VN0340N2
MTD1N40
MTD1N40-1
RFP1N40
IRFF312
IRFF312
sgsp531
2sk76
irf33
unitrode
VN0340N5
sfn02806
stm231
stm331
650P
|
PDF
|
S0211
Abstract: VN03000 2SK738 nec 500t 2sk738 mosfet S0215 3N175 MPF6659 motorola *6659 2SK73
Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) CI. Max tr Max t, Max TOper Max (V) (F) (8) (8) eC) 8.0n 8.0n 13n 8.0n 13n 125 J 125 J 125 J 125 J 125 J 150 150 150 150 150 TO•72 TO·72
|
Original
|
2N7109
S0215
ZVN3302B
TN0102N3
TN0602N3
TN0102N2
TN0602N2
SOF8104
S0211
VN03000
2SK738
nec 500t
2sk738 mosfet
3N175
MPF6659
motorola *6659
2SK73
|
PDF
|
GG 06
Abstract: VN35010
Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) 5 10 UFN733 2N6759 SFN333 MTM5N35
|
Original
|
UFN733
2N6759
SFN333
MTM5N35
MTP5N35
VN35010
GG 06
|
PDF
|
KP902A
Abstract: kp904a BFW96 s0212 3N138 MFE3002 3N138 mosfet 3SK72 KT904 SD2150E
Text: MOSFET Item Number Part Number Manufacturer V BR DSS IDss Max (V) tA) PD Max (W) 50m 50m 50m 50m 50m 50m 50m 1.0 1.0 250m 1.0 250m 40m 70m 360m 200m 150m 150m 150m 150m 150m 360m 20 20 625m 20 1.0 0.36 1.0 ros (on) (Ohms) 9FS Min (S) VGS(th) Clsa t, Max Max
|
Original
|
2N48S0A
BFW96
3N139
3N138
SST211
NOS102B
NOS101B
KP902A
kp904a
s0212
MFE3002
3N138 mosfet
3SK72
KT904
SD2150E
|
PDF
|
SIEMENS 800
Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80
|
Original
|
O-220AB
O-218
O-204
204AC
O-238AA
SIEMENS 800
950p to-247 package
MTH6N85
2SK351
IRFAF30
21n60n
|
PDF
|
ccfl lamp circuit diagram
Abstract: ccfl driver schematic 40 ccfl driver schematic ccfl lamp driver circuit diagram capacitor 470n 400V schematic diagram of ccfl inverter 2N7002-SOT23 schematic diagram 0-12v power supply philips ccfl inverter PHU2N50E
Text: FACT SHEET Signal lamp CCFL application with the UBA2070 Philips Semiconductors Philips Semiconductors Signal lamp (CCFL) application with the UBA2070 FACT SHEET FACT SHEET Signal lamp (CCFL) application with the UBA2070 Author(s): Emile de Jong Philips Semiconductors BL Standard Analog
|
Original
|
UBA2070
MKP479,
SMD0805,
MKT368,
ccfl lamp circuit diagram
ccfl driver schematic
40 ccfl driver schematic
ccfl lamp driver circuit diagram
capacitor 470n 400V
schematic diagram of ccfl inverter
2N7002-SOT23
schematic diagram 0-12v power supply
philips ccfl inverter
PHU2N50E
|
PDF
|
ccfl driver schematic
Abstract: schematic diagram 0-12v power supply philips ccfl inverter ccfl lamp circuit diagram 12v schematic of fluorescent lamps charging control lm358 fluorescent lamp circuit diagram BAS216 8 CCFL Lamps Inverter circuit 6 ccfl inverter
Text: FACT SHEET Desktop lamp CCFL application with the UBA2070 Philips Semiconductors Philips Semiconductors Desktop lamp (CCFL) application with the UBA2070 FACT SHEET FACT SHEET Desktop lamp (CCFL) application with the UBA2070 Author(s): Emile de Jong Philips Semiconductors BL Standard Analog
|
Original
|
UBA2070
MKP479,
SMD0805,
MKT368,
ccfl driver schematic
schematic diagram 0-12v power supply
philips ccfl inverter
ccfl lamp circuit diagram
12v schematic of fluorescent lamps
charging control lm358
fluorescent lamp circuit diagram
BAS216
8 CCFL Lamps Inverter circuit
6 ccfl inverter
|
PDF
|
15NB50
Abstract: 15N 50 mosfet SWITCHING WELDING SCHEMATIC BY MOSFET
Text: s = 7 SGS-THOMSON ^ 7# K l « iL iM ( s iO ( g S S T W 15N B 50 N - CHANNEL ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOSFET PRELIMINARY DATA TYPE STW 15N B50 . m . . . . . V dss RDS(on) Id 500 V < 0 .3 6 Î2 14.6 A TYPICAL F tD S ( o n ) =0.33 £1 EXTREMELY HIGH dv/dt CAPABILITY
|
OCR Scan
|
|
PDF
|
F15N05L
Abstract: F15N06L RFM15N06L RFM15N05L f15n05 RFP15N05L RFP15N06L tl225 RFP mosfets
Text: 3875081 G E SOLID STATE 01 DE|3ö7SDfll GD1A452 □ | ~ d T m3 1 ~ l I Logic-Level Power MOSFETs _ RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L F ile N u m b e r 1558 Power Logic Level MOSFETs T E R M IN A L D IA G R A M N-Channel Logic Level Power Field-Effect Transistors L2 FET
|
OCR Scan
|
3fl75dfil
RFM15N05L,
RFM15N06L,
RFP15N05L,
RFP15N06L
RFM15N05L
RFM15N06L
RFP15N05L
RFP15N06L'
PMP411A.
F15N05L
F15N06L
f15n05
RFP15N06L
tl225
RFP mosfets
|
PDF
|
LTRG
Abstract: P15N06 RFP15N05 15N06 5N06 RFP15N06 FM15N06
Text: cu R FM 15N 05/15N 06 R FP15N 05/15N 06 HARRIS N-Channel Enhancement Mode Power Field Effect Transistors M ay 1992 Packages Features TO -20 4 A A BOTTOM VIEW • 15A , 5 0 V and 6 0V • rD S o n = 0 .1 4 f l SOURCE y • S O A is P o w e r -D is s ip a tio n L im ite d
|
OCR Scan
|
05/15N
FP15N
32e-8
0e-10
68e-8
LTRG
P15N06
RFP15N05
15N06
5N06
RFP15N06
FM15N06
|
PDF
|
15n05
Abstract: RFP15N06
Text: 4302H71 £ j H a 0054307 r r i • s HAS R F R F M 1 5 N 0 5 / 1 5 N 0 6 P 1 5 N 0 5 / 1 5 N 0 6 N-Channel Enhancement Mode Power Field Effect Transistors May 1992 Packages Features T O -20 4 A A BOTTOM VIEW • 15A , 5 0 V and 6 0 V • rD S o n = 0 . 1 4 n
|
OCR Scan
|
4302H71
Ie-30
81e-10
32e-8
0e-10
68e-8
15n05
RFP15N06
|
PDF
|
F15N06L
Abstract: RFP15N05L 15N05L F15N p15n06l FP15N05L
Text: RFM 15N 05L/06L RFP15N05L/06L h a r r is N -Channel Logic Level Power Field-Effect Transistors L2 FET August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 15A, 5 0 V and 60 V • rD S (O N ) = 0 .1 4 n SOURCE f • Design O p tim ized for 5V G ate Drives
|
OCR Scan
|
05L/06L
RFP15N05L/06L
9SCS37634
AN7254
AN-7260.
F15N06L
RFP15N05L
15N05L
F15N
p15n06l
FP15N05L
|
PDF
|
F15N06L
Abstract: No abstract text available
Text: ti3G2271 0D5M773 Th? HAS R FM 15N 05L/06L R FP15N 05L/06L HARRIS N-Channel Logic Level Power Field-Effect Transistors L2 FET A ug ust 19 91 Package Features TO-204AA BOTTOM VIEW • 15A , 5 0 V and 6 0 V • rD S (O N ) = 0 .1 4 « DRAIN /( F L A N G E )
|
OCR Scan
|
ti3G2271
0D5M773
05L/06L
FP15N
O-204AA
T0-220A
9JCS-376S4
36I48
F15N06L
|
PDF
|
F15N05L
Abstract: F15N06L f15n05 f15n06 N05L RFP15N06L 3SI4 RFM15N05L RFM15N06L RFP15N05L
Text: R F M 1 5 N 0 5 L /0 6 L H A IR R IS RFP15N05L/06L N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features T0-204A A BOTTOM VIEW • 15A, 50V and 60V • rDS(ON) = 0 .1 4 0 DRAIN ^ {F L A N G E ) SOURCE • Design Optimized for 5V Gate Drives
|
OCR Scan
|
RFM15
N05L/06L
RFP15N05L/06L
RFM15N05L
RFM15N06L
RFP15N05L
RFP15N06L
S2CS-3SI47
RFM15N05L,
RFM15N06L,
F15N05L
F15N06L
f15n05
f15n06
N05L
3SI4
|
PDF
|
|
|
IRF250a
Abstract: MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20
Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•T c = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15
|
OCR Scan
|
O-204AA
IRF240
MTM15N20
IRF252Â
IRF250Â
MTM40N20
MTM5N18
MTM5P18*
MTM7N18
MTM8P18*
IRF250a
MTH8P20
MTM20N10
MTM45N15
MTP2P45
IRF240
IRF250
IRF252
MTM12N18
MTM15N20
|
PDF
|
15N15
Abstract: rfm15n15 diode RA 225 R
Text: R FM 15N 12/15N 15 R FP15N12/15N15 3 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Packages Features T 0 -204A A BOTTOM VIEW • 15 A , 1 2 0V a n d 150V • r D S on) = 0 .1 5 f l DRAIN (FLANGE) SOURCE • S O A is P o w e r-D is s ip a tio n L im ite d
|
OCR Scan
|
12/15N
FP15N12/15N15
-204A
FP15N12
RFP15N15
92CS-J4B52R1
92CS-36I45
15N15
rfm15n15
diode RA 225 R
|
PDF
|
MTH8P20
Abstract: MTH13N50 MTH7N50 MTH30N20 MTH25N10 MTH15N20 MTH35N15 MTH20N15 MTH40N06 MTP2P45
Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1
|
OCR Scan
|
O-218
O-22QAB
MTM2P50
204AA
MTP2P50
220AB
MTM2P45
MTP2P45
MTH8P20
MTH13N50
MTH7N50
MTH30N20
MTH25N10
MTH15N20
MTH35N15
MTH20N15
MTH40N06
MTP2P45
|
PDF
|
motorola 15N 06VL
Abstract: 15N 50 mosfet 15N06VL
Text: MOTOROLA Order this document by MTD15N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T D 15N 0 6V L TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on “ 0.085 OHM N-Channel Enhancement-Mode Silicon Gate
|
OCR Scan
|
MTD15N06VL/D
motorola 15N 06VL
15N 50 mosfet
15N06VL
|
PDF
|
k 3561 MOSFET
Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con
|
OCR Scan
|
DK101
O-22QAB
k 3561 MOSFET
TP5N05
BUZ80a equivalent
p20n50
P12N08
nx 9120
TP3N40
FD1Z0
IRFZ22 mosfet
th15n20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33Î2 - 14.6A TO-247/ISOWATT218 PowerMESH MOSFET TYP E V STW 15NB50 STH15NB50FI dss 500 V 500 V R D S o n Id < 0 .3 6 Q. < 0.3 6 Q. 14 .6 A 10 .5 A TYPICAL R D S (on) = 0.33 . EXTREMELY HIGH dv/dt CAPABILITY . ± 30V GATE TO SOURCE VOLTAGE RATING
|
OCR Scan
|
STW15NB50
STH15NB50FI
O-247/ISOWATT218
15NB50
avalancheSOWATT218
P025C
|
PDF
|
52N30
Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70
|
OCR Scan
|
76N06-11
76N07-11
76N07-12
67N10
75N10
50N20
58N20
74N20
80N20
35N30
52N30
20n80
ixfh 60N60
IXFX 44N80
15n10
7n80
E51G
44N80
60n60
46N50
|
PDF
|
MTM15N35
Abstract: 15N 50 mosfet 15N45
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N -C h ann el Enh an cem en t-M ode S ilic o n G ate T M O S T M O S P O W E R FETs 15 A M P E R E S These TM O S Pow er FETs are designed fo r high v o lta g e , high
|
OCR Scan
|
MTM15N45,
MTM15N35
15N 50 mosfet
15N45
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0995F06-30 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES PACKAGE DRAWING Unit: mm High output, High gain Po = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)
|
OCR Scan
|
NEM0995F06-30
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F böE D • b3b?254 QQTfiTS? 6b3 ■ MOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA MTP15N05EL Designer's Data Sheet M otorola Preferred Device Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Vi This Logic Level TM OS Power FET is designed for high
|
OCR Scan
|
MTP15N05EL
RuggedO-220AB)
Y145M
221D-02
O-220
Y145M,
314B03
O-220)
|
PDF
|
