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Rochester Electronics LLC AUIRF3305 MOSFET N-CH 55V 140A TO220AB
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DigiKey	AUIRF3305	Bulk	12,137		101	1 - 10 - 100 - 1000 $2.97 10000 $2.97	Buy Now
Infineon Technologies AG IRF3305 MOSFET N-CH 55V 75A TO220AB
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DigiKey	IRF3305	Tube			50	1 - 10 - 100 $2.5982 1000 $2.5982 10000 $2.5982	Buy Now
Infineon Technologies AG IRF3315 MOSFET N-CH 150V 27A TO220AB
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DigiKey	IRF3315	Tube			50	1 - 10 - 100 $2.4668 1000 $2.4668 10000 $2.4668	Buy Now
Infineon Technologies AG IRF3315S MOSFET N-CH 150V 21A D2PAK
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DigiKey	IRF3315S	Tube			250	1 - 10 - 100 - 1000 $1.75648 10000 $1.75648	Buy Now
Infineon Technologies AG IRF3315L MOSFET N-CH 150V 21A TO262
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DigiKey	IRF3315L	Tube			50	1 - 10 - 100 $2.6788 1000 $2.6788 10000 $2.6788	Buy Now

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IRF33 Datasheets (129)

Part	Manufacturer	Description	Type	PDF
IRF330	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRF330	International Rectifier	HEXFET TRANSISTORS 400V, N-CHANNEL 1.00 ? 5.5A	Original	PDF
IRF330	Intersil	5.5A, 400V, 1.000 ?, N-Channel Power MOSFET	Original	PDF
IRF330	Fairchild Semiconductor	N-Channel Power MOSFETs, 5.5A, 350 V/400V	Scan	PDF
IRF330	FCI	POWER MOSFETs	Scan	PDF
IRF330	Frederick Components	Power MOSFET Selection Guide	Scan	PDF
IRF330	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRF330	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A.	Scan	PDF
IRF330	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF330	International Rectifier	TO-3 N-Channel Hexfet Power MOSFETS	Scan	PDF
IRF330	International Rectifier	N-Channel Power MOSFETs	Scan	PDF
IRF330	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF
IRF330	Motorola	Switchmode Datasheet	Scan	PDF
IRF330	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

IRF330	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRF330	Unknown	FET Data Book	Scan	PDF
IRF330	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
IRF330	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
IRF330	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
IRF330	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

...

IRF33 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRF3315 Abstract: No abstract text available Text: PD -91623A APPROVED IRF3315 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.07Ω G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	-91623A IRF3315 O-220 IRF3315
IRF330 Abstract: TA17414 TB334 204AA Text: IRF330 Data Sheet March 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET 1570.4 Features • 5.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	PDF	IRF330 TA17414. IRF330 TA17414 TB334 204AA
IRF470 Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0	Original	PDF	IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
mosfet to3 Abstract: irf33 2N6760 IRF330 LE17 Text: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.0Ω • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available	Original	PDF	IRF330 2N6760 O-204AA) mosfet to3 irf33 2N6760 LE17
IRF 504 Abstract: K02A Text: PD- 95760 IRF3315SPbF IRF3315LPbF Lead-Free 1 IRF3315S/LPbF 2 IRF3315S/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H L OT CODE 8024 AS S E MB L ED ON WW 02, 2000 IN T HE AS S E MB L Y LINE "L"	Original	PDF	IRF3315SPbF IRF3315LPbF IRF3315S/LPbF F530S EIA-418. IRF 504 K02A
irf332 Abstract: irf330 harris Text: IRF330, IRF331, IRF332, IRF333 S E M I C O N D U C T O R 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	PDF	IRF330, IRF331, IRF332, IRF333 TA17414. irf332 irf330 harris
IRF3315 Abstract: No abstract text available Text: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-145-64 IRF3315 HEXFET TO-220 PD -91623A APPROVED IRF3315 HEXFET Power MOSFET l l l l l Advanced Process Technology	Original	PDF	IRF3315 O-220 -91623A IRF3315
irf7309 Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964 Text: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S	Original	PDF	OT-223 IRF3710S IRF7324 IRF1310NS IRF731450 1N4049 300U80A 150L10A DO-30 irf7309 IRF7507TR IRF7342 IRF7210 IRLML2803TR IRF964
Untitled Abstract: No abstract text available Text: IRF331 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)5.5 I(DM) Max. (A) Pulsed I(D)3.5 @Temp (øC)100 IDM Max (@25øC Amb)22 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ	Original	PDF	IRF331
Untitled Abstract: No abstract text available Text: IRF331R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)5.5 I(DM) Max. (A) Pulsed I(D)3.5 @Temp (øC)100 IDM Max (@25øC Amb)22 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ	Original	PDF	IRF331R
IRF1010 Abstract: No abstract text available Text: PD - 94825 IRF3315PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.082Ω G Description ID = 21A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	IRF3315PbF O-220 O-220AB. O-220AB IRF1010 IRF1010
Marking Code ly Abstract: IRL3103L marking LY IRF3315SPBF Text: PD- 95760 IRF3315SPbF IRF3315LPbF Lead-Free www.irf.com 1 08/24/04 IRF3315S/LPbF 2 www.irf.com IRF3315S/LPbF www.irf.com 3 IRF3315S/LPbF 4 www.irf.com IRF3315S/LPbF www.irf.com 5 IRF3315S/LPbF 6 www.irf.com IRF3315S/LPbF www.irf.com 7 IRF3315S/LPbF D2Pak Package Outline	Original	PDF	IRF3315SPbF IRF3315LPbF IRF3315S/LPbF F530S Marking Code ly IRL3103L marking LY IRF3315SPBF
Untitled Abstract: No abstract text available Text: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.01 • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available	Original	PDF	IRF330 2N6760 O-204AA)
TO-254 Abstract: T0-204 IRF450 equivalent Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS	OCR Scan	PDF	2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

Untitled Abstract: No abstract text available Text: In te rn a tio n a l pd-9.i 6i 7b IRF3315S/L 1QR R e c t i f i e r _PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRF3315S Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching	OCR Scan	PDF	IRF3315S) IRF3315L) IRF3315S/L
IRF331 Abstract: IRF332 IRF3301 IRF333 IRF330 Text: -Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 F ile N u m b e r 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	PDF	IRF330, IRF331, IRF332, IRF333 50V-400V 92CS-33741 IRF332 IRF333 IRF331 IRF3301 IRF330
IRF331R Abstract: IRF330R ic l00a 250M IRF332R IRF333R Text: _ Rugged Power MOSFETs File Number 2011 IRF330R, IRF331R, IRF332R, IRF333R Avalanche Energy Rated N-Channel Power MOSFETs 4.5A a nd 5.5A, 350V-400V ros on = 1 .0 0 and 1 .5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated	OCR Scan	PDF	IRF330R, IRF331R, IRF332R, IRF333R 50V-400V IRF332R IRF333R 92CS-426S9 IRF331R IRF330R ic l00a 250M
L3103L Abstract: No abstract text available Text: PD - 9.1617B International I R Rectifier IR F 33 15S /L PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF3315S • Low-profile through-hole (IRF3315L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated	OCR Scan	PDF	1617B IRF3315S) IRF3315L) 4A55452 L3103L
WO2M Abstract: IRF330 IRF331 LM 7801 IRF332 IRF333 Text: □1 J3875081 G E SOLID STATE ¿ Ë 1 3 Û 7 S G 0 1 □□löBGM 7 W 0 1E 18304 Di T " ' 3 £H I - Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 File Number 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode	OCR Scan	PDF	IRF330, IRF331, IRF332, IRF333 50V-400V IRF332 IRF333 WO2M IRF330 IRF331 LM 7801
IRF330 Abstract: IRF331 IRF332 IRF333 331z Text: 7 9 6 4 1 4 2 S ^M S U N G S E M I C O N D U C T O R I DEI TTbMms DDDSim 9 8 D 0 5114 7 “ D T ^ 3 7 ~ // N-CHANNEL POWER MOSFETS IRF330/331/332/333 FEATURES • Low RDS on • Improved inductive ruggedness • • • • • • Fast switching times Rugged polysilicon gate ceil structure	OCR Scan	PDF	0DDS114 IRF330/331Z332/333 IRF330 IRF331 IRF332 IRF333 331z
lem 732 733 Abstract: lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731 Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34b‘ïb74 0 0 5 7 0 ^ □ IRF330-333/IRF730-733 M TM /M TP5N35/5N40 N-Channel Power M O SF ET s, 5.5 A, 350 V/400 V FAIRCHILD A Schlumberger Company Power And Discrete Division — Description TO-204AA TO-220AB IRF330 IRF331	OCR Scan	PDF	IRF330-333/IRF730-733 MTM/MTP5N35/5N40 T-39-11 O-22QAB IRF730 IRF731 IRF732 IRF733 MTP5N35 MTP5N40 lem 732 733 lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731
9BB. Abstract: No abstract text available Text: PD 9.1623 International IOR Rectifier IRF3315 PRELIMINARY H EXFET Power M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating t75°C Operating Temperature Fast Switching Fully Avalanche Rated V DSs = 150V ^ DS on = Description	OCR Scan	PDF	IRF3315 O-220 9BB.
Untitled Abstract: No abstract text available Text: IRF330, IRF331y IRF332, IRF333 I ia ttr is sem conduc or 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.5A and 5.5A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRF330, IRF331y IRF332, IRF333 beRF333
IRF331 Abstract: field effect transistor IRF 900 volts irf330 transistor d 331 data Irf333 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF330 IRF331 IRF333 Pow er Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid	OCR Scan	PDF	IRF330 IRF331 IRF333 O-204) IRF331. field effect transistor IRF 900 volts transistor d 331 data Irf333

IRF33 Search Results

IRF33 Price and Stock

Rochester Electronics LLC AUIRF3305

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IRF33 Datasheets (129)

IRF33 Datasheets Context Search

IRF3315

IRF330

IRF470

mosfet to3

IRF 504

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Untitled

Untitled

IRF1010

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Untitled

TO-254

Untitled

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IRF331R

L3103L

WO2M

IRF330

lem 732 733

9BB.

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IRF331