Untitled
Abstract: No abstract text available
Text: M/HITE /M ICROELECTRONICS WS128K8-XCX 128Kx8 SRAM MODULE FEATURES FIG. 1 • Access Times 25 to 45nS ■ Standard M icro circ u it Draw ing, 5962-93156 PIN CONFIGURATION TOP VIEW NCC A16C A14C A12 C A7 C A6 H A 5Ü A4 C A3 C A2 C A1C ADC i/ooC 1/01 □ 1/02C
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WS128K8-XCX
128Kx8
1/02C
MIL-STD-883
06HXX
07HXX
08HXX
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Untitled
Abstract: No abstract text available
Text: T T WS512K32BV-XCJCE M/HITE /M ICROELECTRONICS 512Kx32 3.3V SRAM MODULE ADVANCED* FEATURES • Access Times of 15,17, 20ns Commercial Temperature Range ■ Low Voltage Operation: TTL Compatible Inputs and Outputs •3.3V ±10% Power Supply Fully Static Operation:
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WS512K32BV-XCJCE
512Kx32
68-lead,
512Kx32;
1Mx16
WS512K32BV-XCJCE
68LEADJLCC
WS512K32BV-XC
512K32
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Untitled
Abstract: No abstract text available
Text: . BOUM A R /U H IT E TECHNOLOGY SDE D • 15^=10 W W n i t e Technology, Inc. D aaaS3n T il ■ Btil T 7 = . ^ MEMORY PRODUCTS PRELIMINARY WS-64M-XX 3.5" 8 8 .9 m m 1 1 2 3 4 DO D1 02 5 6 7 8 e 04 05 10 11 12 03 De 07 08 09 0)0 011 D12 D13 D14 016 E E CM
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WS-64M-XX
811B3
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Untitled
Abstract: No abstract text available
Text: HHITE /M ICRO ELECTRONICS W MF128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • Access Tim es of 60, 70, 9 0 ,1 2 0 ,150ns ■ Organized as 128Kx8 ■ Packaging ■ Commercial, Industrial and M ilita ry Tem perature Ranges • 32 lead, Hermetic Ceramic, 0.400" S O J Package 101
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MF128K8-XXX5
128Kx8
150ns
128Kx8
16KByte
04HXX
05HXX
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Untitled
Abstract: No abstract text available
Text: WHITE /M ICRO ELECTRO NICS 512Kx32 5V FLASH MODULE WF512K32-XXX5 PRELIMINARY* FEATURES Also supports full chip erase • Access Times of 90,120 and 150nS ■ Organized as 512Kx32 ■ Packaging ■ Commercial, Industrial and Military Temperature Ranges • 66-pin, PGA Type, 1.185 inch square. Hermetic Ceramic
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512Kx32
WF512K32-XXX5
150nS
512Kx32
66-pin,
1024K
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WF1024K32-XXX
Abstract: sMD .v05 smd V05
Text: c WHITE /MICROELECTRONICS a WF1024K32-XXX 1024Kx32 12V FLASH M ODULE FEATURES • 100,000 Erase/Program C ycles ■ ■ Organized as 1024Kx32 ■ Com m ercial, Industrial and M ilita ry T em peratu re Ranges ■ A c c e s s T im es of 1 0 0 ,150nS Packaging:
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WF1024K32-XXX
1024Kx32
150nS
66-pin,
64KBytes
each1024Kx8
1024Kx32
1024K
2048K
WF1024K32-XXX
sMD .v05
smd V05
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Untitled
Abstract: No abstract text available
Text: BOUM AR /WHITE TECHNOL OG Y fl? DE Jj ISbBbTfl □ fl jj • ■■■— ¿¿-S iZzif ' - i l ^ •J.\ . ■‘1 ^ - ►' B o u u m a r /llin iite Technology o8&> HYBRID THREE TERMINAL VOLTAGE REGULATORS 8007, 8008, 8009 F lâ T ü iiS • Provides àï % Temperature Stability
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REGULAT0RS-8007,
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Untitled
Abstract: No abstract text available
Text: M/HITE /M ICRO ELEC TR O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SM D 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION TO P V IEW A18C 1 A 16 C 2 32 □ V « 31 □ w e A 15 C 3 30 □ A17 A 12 C 4 29 □ A14
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
300ns
WE512K8-150CQ
01HYX
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Untitled
Abstract: No abstract text available
Text: 128Kx32 5V FLASH MODULE PRELIMINARY* FEATURES • A ccess Times of 120 and 150nS ■ ■ Packaging ■ Organized as 128Kx32 ■ Commercial, Industrial and M ilitary Temperature Ranges ■ 5 Volt Programming. 5V ± 1 0 % Supply. ■ Low Power CM OS, 1.5mA Standby
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128Kx32
150nS
128Kx32
66-pin,
128Kx
128Byte
01HXX*
120nS
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256K x 8 SRAM dip
Abstract: No abstract text available
Text: WS256K8-XCX I/I/HITE /M ICRO ELECTRO N IC S 256Kx8 SRAM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NCC 1 W 32 ^ Vcc □ A15 A16C 2 31 A14C 3 A12C 4 30 □ A 1 7 29 □ W E A7C 5 28 A6 C 6 A5 C 7 27 H8 25 A4 □ A13 □ A8 26 □ A9 Standard Microcircuit Drawing, 5962-93157
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WS256K8-XCX
256Kx8
120ns
MIL-STD-883
100ns
01HXX
02HXX
03HXX
256K x 8 SRAM dip
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Untitled
Abstract: No abstract text available
Text: c a WHITE /MICROELECTRONICS WPS256K4-XRJX PRELIMINARY* 256Kx4 SRAM PLASTIC PLUS FEATURES • Access Times 15,17,20nS PIN CONFIGURATION TOP VIEW N Cd 1 A31 2 ^ 32 □ 31 □ ■ Standard Commercial Off-The-Shelf COTS Memory Devices for Extended Temperature Range
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WPS256K4-XRJX
256Kx4
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Untitled
Abstract: No abstract text available
Text: I/I/HITE /M ICROELECTRONICS 512Kx32 3.3V SRAM MODULE W S512K32BV-XXXE PRELIMINARY* FEATURES • A c c e s s Tim es of 15f, 17, 2 0 n s ■ Com m ercial, Industrial and M ilita ry Tem perature R a n g e s ■ M IL -S T D -8 8 3 C om pliant D e vic e s A va ilab le
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512Kx32
S512K32BV-XXXE
66-pin,
512KX32
1Mx16
15b3b
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Untitled
Abstract: No abstract text available
Text: WS512K8-XCX 1/1/HITE /MICROELECTRONICS 512Kx8 SRAM MODULE FEATURES FIG. 1 • Access Times 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW ■ Standard Microcircuit Drawing, 5962-92078 ■ MIL-STD-883 Compliant Devices Available 32 J Vcc 31 H A15 ■ Rad Tolerant Devices Available
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WS512K8-XCX
512Kx8
MIL-STD-883
06HTX
07HTX
08HTX
09HTX
DDD2057
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Untitled
Abstract: No abstract text available
Text: I i 'À II liVHITE M IC RO ELECT RO N ICS 128Kx8 SRAM WPS128K8-XRJX prelim ina ry * PLASTIC PLUS FEATURES • Access Times 15,17, 20ns PIN C O N F IG U R A T IO N T O P V IE W AOC 1 A 1C 2 A 2C 3 A 3C 4 C SC 5 1/01 C 6 W ■ Standard Commercial Off-The-Shelf COTS Memory
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128Kx8
WPS128K8-XRJX
128K8
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Untitled
Abstract: No abstract text available
Text: WS128K8-XCX 1/1/HITE /M ICRO ELECTRO N IC S 128Kx8 SRAM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NCC 1 ^ 32 3 Vcc • Access Times 55, 70, 8 5 ,1 0 0 ,120ns ■ Standard Microcircuit Drawing, 5962-93156 ■ M IL-STD -883 Compliant Devices Available
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WS128K8-XCX
128Kx8
120ns
128Kx
01HXX
100ns
02HXX
03HXX
04HXX
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Untitled
Abstract: No abstract text available
Text: m WPF2M32B-90PSC5 I/I/HITE /M ICRO ELECT R O N IC S 4x512Kx32 5V FLASH SIM M PRELIMINARY* FEATURES • ■ ■ A c c e s s Time of 90 n s 100,000 Erase/Program Cycles Packaging: ■ Organized a s four banks of 5 1 2K x32 • 80-pin S I M M ■ Com m ercial Tem perature Range
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WPF2M32B-90PSC5
4x512Kx32
80-pin
15b3b=
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Untitled
Abstract: No abstract text available
Text: C3 WPF1M32-90PJC5 WHITE /M ICRO ELECTR O N IC S 1Mx32 5V FLASH MODULE PRELIMINARY1' FEATURES • Maximum A ccess Time of 90ns ■ Embedded Program Algorithms ■ Packaging • Autom atically programs and verifies data at specified address • 68-lead, Plastic PLCC, 25.15 mm 0.990 inch square
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WPF1M32-90PJC5
1Mx32
68-lead,
64KBytes
Pin32-90PJC5
15b3b
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Untitled
Abstract: No abstract text available
Text: WHITE /MICROELECTRONICS 128Kx8 SRAM WPS128K8V-XRJX ad va nce d * PLAS TIC P LU S FEA T U R ES • Access Times 1 5 ,17,20ns PIN CONFIGURATION TOP VIEW c □ A2 □ AO 1 A1 2 A3 3 [I 4 c c I/0 2 c Vcc □ Vss □ CS 5 1/01 6 7 8 9 I/03 □ 10 1/04 IZ 11
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128Kx8
WPS128K8V-XRJX
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Untitled
Abstract: No abstract text available
Text: M/HITE /MICROELECTRONICS WMS256K4-XDSX 256Kx4 SRAM MONOLITHIC FEATURES PIN CONFIGURATION TOP VIEW 28 □ Vcc 27 □ A17 26 □ A16 25 □ A15 24 HA14 23 ZJA13 22 □ A12 21 3A11 20 ]N C 19 Di/os 18 Hl/02 17 31/01 16 ni/oo 15 □ WÊ A cce ss Times 25, 35, 45ns
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WMS256K4-XDSX
256Kx4
ZJA13
Hl/02
AO-17
15b3bSfl
0D0173fl
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Untitled
Abstract: No abstract text available
Text: WSF256K8-XCX M/HITE /M IC RO ELEC TR O N IC S 256Kx8 SRAM/ FLASH MODULE * ADVANCED FEATURES FIG. 1 • A18H 1 ^ ■ 32 3 Vcc A16C 2 31 H W E A15C 3 30 3 A17 A12H 4 29 H A 1 4 A7C 5 28 H A13 A6C 6 A5C 7 27 H A 8 A4C 8 25 H A11 J E D E C S ta n d a rd , H e rm e tic C e ra m ic P a c k a g e , 3 2 pin D IP
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WSF256K8-XCX
256Kx8
WSE128K16-XXX
128K16
Package401)
150ns
300ns
128Kx
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Untitled
Abstract: No abstract text available
Text: a WHITE /M IC R O E L E C T R O N IC S 128Kx48 3.3V SRAM MODULE W S128K48V-XG4W X ADVANCED* FEATURES • A c c e s s Tim es 1 5 , 1 7 , 2 0 , 25 n s ■ Pa ckaging 2 V Data Retention D e vice s A vailab le ■ TTL C om patible Inputs and Outputs Low Pow er Version
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128Kx48
S128K48V-XG4W
128K48
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ws128k8xcx
Abstract: No abstract text available
Text: I/I/HITE /MICROELECTRONICS WS128K8-XCX 128Kx8 SRAM MODULE FEATURES FIG. 1 • Access Times 25, 35, 45ns PIN CONFIGURATION TOP VIEW ■ Standard Microcircuit Drawing, 5962-93156 ■ MIL-STD-883 Compliant Devices Available ■ Rad Tolerant Devices Available
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WS128K8-XCX
128Kx8
MIL-STD-883
06HXX
07HXX
08HXX
ws128k8xcx
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Untitled
Abstract: No abstract text available
Text: TT WSF512K16-XXX M/HITE /MICROELECTRONICS 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture
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WSF512K16-XXX
512Kx16
120ns
66-pin,
68-lead,
120ns
01HXX
02HXX
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Untitled
Abstract: No abstract text available
Text: BO WMAR / U H I T E TEC HN OL OG Y t a D e | lSt3t18 0DD DDD7 1 J n * C u sto m B e v ic e s , Êmc M l. a mO T v 11 A P P L IC A T IO N S A SM A LO O SW 1T FO R A/D AN D D/A C O N V ER SIO N , SAM PLE AN D HOLD CIRCU ITS, AN D M U LTIP LEX IN G A PPLIC A TIO N S
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lSt3t18
15b3bTfl
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