Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    150DE Search Results

    SF Impression Pixel

    150DE Price and Stock

    Vishay Dale WSLP1206R0150DEA

    RES 0.015 OHM 0.5% 1W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey WSLP1206R0150DEA Reel 8,000 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.74624
    		Buy Now
    WSLP1206R0150DEA Cut Tape 2,376 1
    • 1 $1.84
    • 10 $1.546
    • 100 $1.1786
    • 1000 $0.76992
    • 10000 $0.76992
    		Buy Now

    Zaber Technologies Inc X-LSQ150D-E01-KX14C

    Motorized linear stage, screw dr
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey X-LSQ150D-E01-KX14C 5 1
    • 1 $3242
    • 10 $3242
    • 100 $3242
    • 1000 $3242
    • 10000 $3242
    		Buy Now

    Zaber Technologies Inc X-LSQ150D-E01-KX13C

    LINEAR STAGE 150MM CPITCH HSPEED
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey X-LSQ150D-E01-KX13C Bulk 5 1
    • 1 $3386.9
    • 10 $3386.9
    • 100 $3386.9
    • 1000 $3386.9
    • 10000 $3386.9
    		Buy Now

    Vishay Dale WSR2R0150DEA

    RES 0.015 OHM 0.5% 2W 4527
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey WSR2R0150DEA Reel 1,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.14756
    		Buy Now

    Microchip Technology Inc 1EZ150DE3/TR8

    DIODE ZENER 150V 1W DO204AL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1EZ150DE3/TR8 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more 150DE price and stock on Findchips.com

    150DE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CDMC10D50/T150 Features • Metal compound molding type construction. • Magnetically shielded. • Qualified AEC-Q200 • Suitable for Large Current • Operating temperature range: - 40deg C～+150deg C including coil’s self temperature rise Applications


    Original     		PDF CDMC10D50/T150 AEC-Q200 40deg 150deg CDMC10D50T150NP-1R1MC CDMC10D50T150NP-1R6MC CDMC10D50T150NP-2R2MC CDMC10D50T150NP-2R7MC CDMC10D50T150NP-3R3MC CDMC10D50T150NP-4R3MC

    Untitled

    Abstract: No abstract text available
    Text: CDMC50D38/T150 Features • Metal compound molding type construction. • Magnetically shielded. • Qualified AEC-Q200 • Suitable for Large Current • Operating temperature range: - 40deg C～+150deg C including coil’s self temperature rise Applications


    Original     		PDF CDMC50D38/T150 AEC-Q200 40deg 150deg CDMC50D38/T150NP

    alternator LIN protocol 2.0

    Abstract: voltage regulation of alternator using microcontroller LIN 2.0 alternator ecu alternator voltage regulator TC80310 Alternator regulator lin protocol specification automotive alternator voltage regulator LIN alternator diode numbers ISO-7637-1 alternator circuit diagram
    Text: Freescale Semiconductor Advance Information Document Number: TC80310 Rev 3.0, 8/2012 Alternator Regulator with LIN 80310 The 80310 is an integrated circuit intended to regulate the output voltage of an automotive alternator. The IC supplies a current via a high side MOSFET to the excitation


    Original     		PDF TC80310 STR0326182960 alternator LIN protocol 2.0 voltage regulation of alternator using microcontroller LIN 2.0 alternator ecu alternator voltage regulator Alternator regulator lin protocol specification automotive alternator voltage regulator LIN alternator diode numbers ISO-7637-1 alternator circuit diagram

    GRM31 Murata

    Abstract: CC195 ST1S40 h3dg qp2n ST1S40IPUR MURATA GRM31 C3225X7RE106K ST1S40IDR s08b
    Text: ST1S40 3 A DC step-down switching regulator Features • 3 A DC output current ■ 4.0 V to 18 V input voltage ■ Output voltage adjustable from 0.8 V ■ 850 kHz switching frequency ■ Internal soft-start ■ Integrated 95 mΩ and 69 mΩ Power MOSFETs ■


    Original     		PDF ST1S40 ST1S40 GRM31 Murata CC195 h3dg qp2n ST1S40IPUR MURATA GRM31 C3225X7RE106K ST1S40IDR s08b

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC327, BC327A, BC328 PNP BC337, BC337A, BC338 (NPN) TO-92 EBC


    Original     		PDF BC327, BC327A, BC328 BC337, BC337A, BC338 C-120

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.


    Original     		PDF RD10MMS2 870MHz RD10MMS2 12Wtyp, 870MHz 800MHz-band

    optical sensor

    Abstract: amplifire Circuit current amplifire circuit diagram 5v infrared camera
    Text: Visible Radiant Optical Sensor /Data Sheet TDK Visible Radiant Optical Sensor is the photo-IC which uses an amorphous silicone semiconductor technology. It is the most suitable for Brightness Adjustment, Control of the Lighting systems. BCS2015A1 has currentamplifire in it. BCS2015A1 is for surface mounthing.


    Original     		PDF BCS2015A1 245deg 255deg 230deg 180deg 30sec 40sec 150deg optical sensor amplifire Circuit current amplifire circuit diagram 5v infrared camera

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R2A20057BM Lithium-Ion Battery Switching Charger IC with Auto Load Current Distribution R03DS0069EJ0100 Rev.1.00 Mar 1, 2013 This is a target specification. Some specs are subject to change. Description R2A20057BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC.


    Original     		PDF R2A20057BM R03DS0069EJ0100 R2A20057BM TH05-3H103F NCP15WF104F03RC R03DS0069EJ0100

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    BC337A

    Abstract: No abstract text available
    Text: BC337A NPN Medium Power Transistor • This device is designed for general purpose amplifier application at collector currents to 800mA. • Sourced from process 38. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF BC337A 800mA. BC337A

    RD02MUS1

    Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


    Original     		PDF RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17

    RD07MVS1

    Abstract: RD07MVS1-101 T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) RD07MVS1-101 T112 3M Touch Systems

    RD07MVS1

    Abstract: RD07MVS1B T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05


    Original     		PDF RD07MVS1B 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS1B RD07MVS1 T112 3M Touch Systems

    RD30HVF1

    Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 RD30HVF1-101 rf power transistor rd30hvf1 100OHM

    RD01MUS1-101

    Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 c111m RD01MSU1 3M Touch Systems

    RD07MUS2B

    Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


    Original     		PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773

    100OHM

    Abstract: RD30HUF1
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101 100OHM

    Ceramic Capacitors 104

    Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
    Text: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.


    Original     		PDF K99E-27 Ceramic Capacitors 104 mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1

    BCY58

    Abstract: TYP50 BCY59 X10-4 BCY58-7 BCY58-9 bcy58-8 BCY581 cdil bcy58-8 BCY588
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low Noise Audio Amplifier Input Stages & Driver Applications Complementary BCY78/79 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BCY58, BCY59 BCY78/79 BCY58 C-120 BCY58 TYP50 BCY59 X10-4 BCY58-7 BCY58-9 bcy58-8 BCY581 cdil bcy58-8 BCY588

    Untitled

    Abstract: No abstract text available
    Text: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted


    Original     		PDF BCW66G 500mA. OT-23 150degrees BCW66G

    pn4117a

    Abstract: No abstract text available
    Text: PN4117A PN4117A N-Channel Switch • This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for subpicoamp instrumentation or any high impedance signal sources. • Sourced from process 53.


    Original     		PDF PN4117A 150degrees PN4117A ND26Z

    MLX91206

    Abstract: 952 hall sensor
    Text: MLX91206 Triaxis Current Sensor IC Features and Benefits Application Examples Programmable high speed current sensor IC Wideband: DC to 90kHz Short response time Tria⊗is hall technology Programmable linear transfer characteristic Selectable analog ratiometric output


    Original     		PDF MLX91206 90kHz MLX91206 15nVss, 952 hall sensor

    Tyre pressure monitoring system block diagram

    Abstract: lanskroun avx taj AVX Tantalum Electrolytic Capacitors TS16949 electronic control unit engine Automotive capacitors electronic stability control cars tyre pressure monitoring airbag
    Text: Tantalum and OxiCap niobium oxide capacitors deliver enhanced reliability, wide temperature range and low leakage for automotive applications R. Faltus AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic email: radovan.faltus@eur.avx.com


    Original     		PDF

    d10n05

    Abstract: IN5240B RFD10N05SM RFD10N05 AN7254 AN7260 92CS-42660
    Text: Power MegaFETs- RFD10N05, RFD10N05SM File N um b er 2107 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 10 A , 50 V rD s (o n ) = 0 .1 f i N -C H A N N E L E N H A N C E M E N T M OD E Features: • S ingle pu lse avalanche e n ergy ra ted


    OCR Scan     		PDF RFD10N05, RFD10N05SM RFD10N05 RFD10N05SM 92cs-429 AN7254 AN7260. IN5240B 92cs-42922 92cs-42659 d10n05 IN5240B AN7260 92CS-42660