panasonic EEEFK1C470UR
Abstract: 47 vfk EEEFK1H470XP EEEFK1V331P EEEKF1V EEE-FK1H470XP Panasonic 330 vfk eeefk1c101p panasonic EEE-FK1V101XP EEEFK2A151AM
Text: NOT RECOMMENDED FOR NEW DESIGN NOTICE SUBJECT: V-FKseries Surface Mount Type Aluminum Electrolytic Capacitors Non-RoHS EEV parts 10mm diameter and under, suffix P and R BULLETIN #: NRFND.PG44.06.05.09-4 Date: June 5, 2009 Page 1 of 5 Details: V-FK series Non-RoHS Surface Mount Type Aluminum Electrolytic
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250degC
240degC
240degC
panasonic EEEFK1C470UR
47 vfk
EEEFK1H470XP
EEEFK1V331P
EEEKF1V
EEE-FK1H470XP Panasonic
330 vfk
eeefk1c101p
panasonic EEE-FK1V101XP
EEEFK2A151AM
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optical sensor
Abstract: amplifire Circuit current amplifire circuit diagram 5v infrared camera
Text: Visible Radiant Optical Sensor /Data Sheet TDK Visible Radiant Optical Sensor is the photo-IC which uses an amorphous silicone semiconductor technology. It is the most suitable for Brightness Adjustment, Control of the Lighting systems. BCS2015A1 has currentamplifire in it. BCS2015A1 is for surface mounthing.
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BCS2015A1
245deg
255deg
230deg
180deg
30sec
40sec
150deg
optical sensor
amplifire Circuit
current amplifire circuit diagram
5v infrared camera
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39E2527A
Abstract: GRM155B11E103K GRM155B11H102K spectrum emission mask MITSUBISHI Microwave PW2100 GRM32EB31C476K grm188B31E105K metal detector plans wimax spectrum mask
Text: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device
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MGFS39E2527A-01
39E2527A
30dBm
64QAM,
MGFS39E2527A
39E2527A
GRM155B11E103K
GRM155B11H102K
spectrum emission mask
MITSUBISHI Microwave
PW2100
GRM32EB31C476K
grm188B31E105K
metal detector plans
wimax spectrum mask
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XF-15TB-1222XMNL
Abstract: tl217
Text: REV. 5.0 5.95 0.46±0.05 7.80 2.54 5.30 3.95 5.30 3.30 一Mechanicals Dimensions DESCRIPTION DATE DWN AP’PD 三、ELECTRICAL SPECFICATIONS@25℃: 1. Turn Ratio ±2% :1CT:2CT 9.50 SUGGESTED PAD LAYOUT 0.64 7.60 4 3. Pri LL (100KHz/0.1V):0.4uH MAX 7.37
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100KHz/0
1500Vrms/0
TG08-1205NSRL
XF-15TB-1222XMNL
44grams/pcs
62pcs
6200pcs/box
XF-15TB-1222XMNL
tl217
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HBT 01 05
Abstract: No abstract text available
Text: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •
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MGFS38E3336-01
MGFS38E3336
64QAM,
IEEE802
16e-2005
0120sec
HBT 01 05
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GRM31CB30J476K
Abstract: MGFS38E2325 RPC03T
Text: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •
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MGFS38E2325-01
MGFS38E2325
64QAM,
IEEE802
16e-2005
0120sec
GRM31CB30J476K
RPC03T
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Untitled
Abstract: No abstract text available
Text: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •
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MGFS38E3336-01
MGFS38E3336
64QAM,
IEEE802
16e-2005
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Untitled
Abstract: No abstract text available
Text: MYLPW3R34EAFN Specification 1 DC-DC Converter Specification MYLPW3R34EAFN 1. Application This specification applies to DC-DC Converter MYLPW3R34EAFN for telecommunication / data-communication equipment.For any other application, please contact us before using this product.
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MYLPW3R34EAFN
MYLPW3R34EAFN
3R34EAFN
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BCS5030G1
Abstract: 5v infrared camera
Text: Visible Radiant Optical Sensor /Data Sheet BCS5030G1 Application • Brightness control for LCD, EL and CRT • Brightness control for Keypads e. g. Mobile Phones • Positioning scanline for Rear Projecton TV • Exposure adjust for Compact Camera • Sub exposure adjust for Digital Camera
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BCS5030G1
BCS5030G1
4200K)
245deg
255deg
230deg
180deg
30sec
5v infrared camera
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D552
Abstract: MOS13 d3604 moisture sensitivity MPC745 MPC755 Preconditioning
Text: MPC745/755 Microprocessor MOS-13 HiP4DP Rev. 2.8 Qualification Report Device No./Rev.: MPC745/755 Rev 2.8 Description: MPC745/755 Technology:MOS13 HiP4DP Package: 255PBGA / 360PBGA / 360CBGA Report Rev.: A Revision date: 06/15/04 Page 1 of 7 MPC745/755 Product Information:
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MPC745/755
MOS-13
MPC745/755
MOS13
255PBGA
360PBGA
360CBGA
MPC745:
D552
d3604
moisture sensitivity
MPC745
MPC755
Preconditioning
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Untitled
Abstract: No abstract text available
Text: MPDTY461S/MPDTY462S DATA Sheet 1 DC-DC Converter DATA Sheet MPDTY461S/MPDTY462S Feature: Size: 33.02mm*13.46mm*4.2mm Max. Vin : 4.5Vdc-14Vdc Vout : MPDTY461S/1.6Vdc-3.63Vdc, MPDTY462S/0.75Vdc-1.65Vdc Iout : 0-26Adc/10-14Vdc in, 0-20Adc/4.5-10Vdc in 94W Application:
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MPDTY461S/MPDTY462S
MPDTY461S/MPDTY462S
5Vdc-14Vdc
MPDTY461S/1
63Vdc,
MPDTY462S/0
75Vdc-1
65Vdc
0-26Adc/10-14Vdc
0-20Adc/4
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BCS2015H1
Abstract: BCS2015G1
Text: Visible Radiant Optical Sensor /Data Sheet BCS2015H1 is the photodiode which uses an amorphous silicone semiconductor on the plastic substrate. It is the most suitable for Brightness Adjustment, Control of the Lighting systems,and some light sensing. BCS2015H1 is for conventional surface mounthing.
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BCS2015H1
BCS2015G1
245deg
255deg
230deg
180deg
30sec
40sec
BCS2015G1
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39E2527A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device
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MGFS39E2527A-01
39E2527A
30dBm
64QAM,
MGFS39E2527A
39E2527A
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Untitled
Abstract: No abstract text available
Text: T-1 3mm SOLID STATE LAMP Part Number: WP710A10VBC/D Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z Low power consumption. The Blue source color devices are made with InGaN Light z Popular T-1 diameter package.
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WP710A10VBC/D
22pcs
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GRM155B11C223K
Abstract: RPC03T GRM155B11 GRM32EB31C476K
Text: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •
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MGFS38E2527-01
MGFS38E2527
64QAM,
IEEE802
16e-2005
0V60120sec
GRM155B11C223K
RPC03T
GRM155B11
GRM32EB31C476K
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Untitled
Abstract: No abstract text available
Text: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •
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MGFS38E2325-01
MGFS38E2325
64QAM,
IEEE802
16e-2005
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2040 li
Abstract: XP-58TB-1226CCNL
Text: REV. 一Mechanicals Dimensions DESCRIPTION DATE DWN AP’PD 三、ELECTRICAL SPECFICATIONS@25℃: 1. Turn Ratio ±2% Pri:Sec: 1:1CT 2. Pri OCL(100KHz/0.1V): 1.2mH MIN 3. Pri LL(100KHz/0.1V): 0.6uH MAX. 4. CWW(100KHz/0.1V): 35pF MAX 5. HI-POT: 1500Vrms/0.5mA/2Sec
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100KHz/0
1500Vrms/0
TX1294NL
XF-58TB-1226CCNL
400pcs
unit2400pcs/box
2040 li
XP-58TB-1226CCNL
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XF00135-32S
Abstract: 273g
Text: REV. 一Mechanicals Dimensions DESCRIPTION DATE DWN AP’PD 三、ELECTRICAL SPECFICATIONS@25℃: 1. Turn Ratio ±5% Pri:Sec: TX=1:2, RX=1:1 2. Pri OCL(100KHz/0.05V): 1.5mH TYP 3. Pri LL(100KHz/0.05V):0.6uH MAX 4. CWW(100KHz/0.05V):30pF MAX 5. Pri DCR:1.0Ω MAX
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100KHz/0
1500Vrms/0
XF00135-32S
XF-59TB-1528DNL
73grams/pcs
450pcs
2700pcs/box
XF00135-32S
273g
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11FB-05ANL
Abstract: H1102TNL 11FB-05 100mV8mA b 1370 C1410 tl217 100baseT
Text: REV. 一Mechanicals Dimensions DESCRIPTION DATE DWN AP’PD 8.89 16 9 三、ELECTRICAL SPECFICATIONS@25℃: 10.67 6.85 6.90 8.89 2. OCL 100KHz/100mV@8mA : 350uH MIN 8 1 1.27±0.10 1. Turn Ratio(±2%): 1CT:1CT 0.46±0.05 3. Insertion Loss(dB MAX): -1.1dB(0.3-100MHz)
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100KHz/100mV
350uH
3-100MHz)
-20dB
30MHz)
-14dB
60MHz)
80MHz)
-45dB
11FB-05ANL
H1102TNL
11FB-05
100mV8mA
b 1370
C1410
tl217
100baseT
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AN994
Abstract: AN-955 AN-994 SMD-220
Text: IR Application Note AN-994 TITLE: Maximizing the Effectiveness of Your SMD Assemblies Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Topics Covered: I. Thermal characteristics of surface-mounted packages II. How we measure Rth JA
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AN-994
SMD-220
O-263)
O-252)
OT-223
O-261)
OT-23)
OT-89
O-243
AN994
AN-955
AN-994
SMD-220
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AN-994
Abstract: AN994 HEXFET SO-8 AN-955 SMD-220 9417
Text: IR Application Note AN-994 TITLE: Maximizing the Effectiveness of Your SMD Assemblies Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Topics Covered: I. Thermal characteristics of surface-mounted packages II. How we measure Rth JA
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AN-994
SMD-220
O-263)
O-252)
OT-223
O-261)
OT-23)
OT-89
O-243
AN-994
AN994
HEXFET SO-8
AN-955
SMD-220
9417
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photodiode CIE eye response
Abstract: photodiode eyes response application amorphous silicon photodiode BCS2015G1 photodiode eyes response
Text: Visible Radiant Optical Sensor /Data Sheet BCS2015G1 is the photodiode which uses an amorphous silicone semiconductor on the glass substrate. It is the most suitable for Brightness Adjustment, Control of the Lighting systems. BCS2015G1 is for surface mounthing.
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BCS2015G1
BCS2015G1
245deg
255deg
230deg
180deg
30sec
photodiode CIE eye response
photodiode eyes response application
amorphous silicon photodiode
photodiode eyes response
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D7377
Abstract: MC7457RX1000NB D62673 mc7457 360CB D626 MC7447 MOS13 FIT rate d6108
Text: Semiconductor Products Sector MC7447/MC7457 Microprocessor MOS-13 HiP7SOI Rev. 1.1 / 1.2 Qualification Report MC7447/MC7457 Product Information: Device No./Rev.: MC7447/MC7457 Rev. 1.1/1.2 Description: L/N/W-spec MC7447/MC7457 Technology:MOS13 Package: 360CBGA / 483CBGA
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MC7447/MC7457
MOS-13
MC7447/MC7457
MOS13
360CBGA
483CBGA
30-March-04
MC7447:
D7377
MC7457RX1000NB
D62673
mc7457
360CB
D626
MC7447
MOS13
FIT rate
d6108
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Untitled
Abstract: No abstract text available
Text: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •
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MGFS38E2527-01
MGFS38E2527
64QAM,
IEEE802
16e-2005
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