Untitled
Abstract: No abstract text available
Text: IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling
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IRFPC40,
SiHFPC40
2002/95/EC
O-247AC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching
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IRFPE40,
SiHFPE40
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFP360LC
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
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IRFP360LC,
SiHFP360LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFP360LC
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Untitled
Abstract: No abstract text available
Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110
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IRFP360,
SiHFP360
2002/95/EC
O-247AC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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irfpf40
Abstract: No abstract text available
Text: IRFPF40, SiHFPF40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 2.5 Qg (Max.) (nC) 120 Qgs (nC) 16 Qgd (nC) 67 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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IRFPF40,
SiHFPF40
2002/95/EC
O-247AC
O-247AC
O-220trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
irfpf40
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Untitled
Abstract: No abstract text available
Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching
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Original
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PDF
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IRFPE40,
SiHFPE40
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
O-247AC
IRFPC50APbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole
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IRFP048,
SiHFP048
2002/95/EC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110
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IRFPE50,
SiHFPE50
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFP064
Abstract: ab540
Text: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.009 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP064,
SiHFP064
2002/95/EC
O-247AC
11-Mar-11
IRFP064
ab540
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Untitled
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix Ø 10 0. 0 + 0.0 50 1. 4.00 ± 0.10 2.00 ± 0.05 A + 0.30 8.00 - 0.10 0.25 ± 0.02 1.75 ± 0.10 MICRO FOOT 0.8 x 0.8 CARRIER TAPE B BO B 5° max. 3.50 ± 0.05 4.00 ± 0.10 A SECTION A-A BO = 0.91 ± 0.05 5° max. KO = 0.50 ± 0.05
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C11-0255-Rev.
14-Mar-11
93-5268-X
14-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling
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PDF
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IRFPE30,
SiHFPE30
2002/95/EC
O-247AC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFPF50,
SiHFPF50
2002/95/EC
O-247AC
O-247AC
O-22trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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IRFPC50LC,
SiHFPC50LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFP140P
Abstract: No abstract text available
Text: IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.077 Qg (Max.) (nC) 72 Qgs (nC) 11 Qgd (nC) 32 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP140,
SiHFP140
O-247AC
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFP140P
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IRFPE30
Abstract: No abstract text available
Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling
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Original
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IRFPE30,
SiHFPE30
2002/95/EC
O-247AC
O-220AB
O-247AC
11-Mar-11
IRFPE30
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TE1508
Abstract: TE1105 te1507 Vishay Sprague axial TE1090 TE110 TE1211 30D605G025B
Text: TE Vishay Sprague Aluminum Capacitors Little-Lytic Electrolytics FEATURES • Proven dependable performance in the industrial and electronic equipment with either transistor or modified electron-tube circuits All terminal connections welded, eliminating possibility of
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11-Mar-11
TE1508
TE1105
te1507
Vishay Sprague axial
TE1090
TE110
TE1211
30D605G025B
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SIHG20N50C
Abstract: No abstract text available
Text: SiHG20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • High Peak Current Capability • dV/dt Ruggedness • Improved Trr/Qrr
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SiHG20N50C
O-247AC
2002/95/EC
O-247AC
SiHG20N50C-E3
SiHG20N50C-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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IRFP350
Abstract: SiHFP350 IRFP350PBF
Text: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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PDF
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IRFP350,
SiHFP350
O-247AC
O-220AB
O-247AC
O-218
11-Mar-11
IRFP350
IRFP350PBF
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IRFPC40
Abstract: SiHFPC40
Text: IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling
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Original
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PDF
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IRFPC40,
SiHFPC40
2002/95/EC
O-247AC
O-220AB
O-247AC
11-Mar-11
IRFPC40
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IRFPC50
Abstract: SiHFPC50
Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the
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Original
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IRFPC50,
SiHFPC50
O-247AC
O-220AB
O-247AC
O-218
11-Mar-11
IRFPC50
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IRFPC50A
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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Original
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PDF
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
11-Mar-11
IRFPC50A
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EIA-364-52
Abstract: MMS12
Text: 1471-9 3 /1 1 LOC D IS T AD 0 0 R E V IS IO N S P LTR A1 D E S C R IP T IO N REVISED PE R DATE ECO-11-005027 DWN A PVD RK HMR 14MAR11 D M AKE - B E FO R E - B R E A K SPDT SPECIFICATIONS: MATERIALS: BASE, NYLON 66 U L 9 4 V - 0 , 25% GF-BLACK COVER, POLYACETAL U L 9 4 - H B , 25% GF-BLACK
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14MAR11
UL94V-0,
UL94-HB,
2002/95/EC
27JAN2003
MMS12
050CT04
MMS-12
EIA-364-52
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Untitled
Abstract: No abstract text available
Text: 4 C O PYRIG HT - 2 3 T H IS DRAW ING IS U N P U B L IS H E D . R E LE A S E D FO R P U B LIC A TIO N LOC By - REVISIO NS D IS T AF ÒU ALL RIGHTS R ESERVED . p LTR D E S C R IP T IO N M1 REVISED PER E C O - 1 1 - 0 0 5 0 2 7 DATE DWN 14MAR11 APVD RK HMR
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14MAR11
C-070]
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