Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
O-247AC
IRFPC50APbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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IRFPC50LC,
SiHFPC50LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SiHFPC50LC
Abstract: IRFPC50LC
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
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IRFPC50LC,
SiHFPC50LC
O-247
18-Jul-08
IRFPC50LC
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IRFPC50
Abstract: SiHFPC50
Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the
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IRFPC50,
SiHFPC50
O-247AC
O-220AB
O-247AC
O-218
11-Mar-11
IRFPC50
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IRFPC50A
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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Original
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
11-Mar-11
IRFPC50A
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IRFPC50LC
Abstract: SiHFPC50LC
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
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IRFPC50LC,
SiHFPC50LC
O-247
18-Jul-08
IRFPC50LC
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Untitled
Abstract: No abstract text available
Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the
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IRFPC50,
SiHFPC50
2002/95/EC
O-247AC
O-247AC
O-22hay
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the
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IRFPC50,
SiHFPC50
2002/95/EC
O-247AC
O-247AC
O-22trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: IRFPC50_RC, SiHFPC50_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFPC50
SiHFPC50
AN609,
07-Jul-10
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Untitled
Abstract: No abstract text available
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFPC50LC,
SiHFPC50LC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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Original
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PDF
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFPC50LC,
SiHFPC50LC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.58 Qg (Max.) (nC) 70 Qgs (nC) 19 Qgd (nC) 28 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFPC50A,
SiHFPC50A
O-247
O-247
IRFPC50APbF
SiHFPC50A-E3
IRFPC50Amerchantability,
12-Mar-07
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irfpc50
Abstract: MOSFET IRFpc50
Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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IRFPC50,
SiHFPC50
O-247
O-247
O-220
12-Mar-07
irfpc50
MOSFET IRFpc50
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IRFPC50A
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.58 Qg (Max.) (nC) 70 Qgs (nC) 19 Qgd (nC) 28 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFPC50A,
SiHFPC50A
O-247
18-Jul-08
IRFPC50A
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IRFPC50LC
Abstract: SiHFPC50LC
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFPC50LC,
SiHFPC50LC
O-247
11-Mar-11
IRFPC50LC
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Untitled
Abstract: No abstract text available
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
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Original
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PDF
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IRFPC50LC,
SiHFPC50LC
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFPC50LC,
SiHFPC50LC
2002/95/EC
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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Original
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PDF
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
O-247AC
IRFPC50APbF
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the
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Original
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PDF
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IRFPC50,
SiHFPC50
O-247AC
O-220AB
O-247AC
O-218
2002/95/EC.
2002/95/EC
2011/65/EU.
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IRFPC50A
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.58 Qg (Max.) (nC) 70 Qgs (nC) 19 Qgd (nC) 28 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFPC50A,
SiHFPC50A
O-247
18-Jul-08
IRFPC50A
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irfpc50
Abstract: MOSFET IRFpc50 SiHFPC50
Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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PDF
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IRFPC50,
SiHFPC50
O-247
O-247
18-Jul-08
irfpc50
MOSFET IRFpc50
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Untitled
Abstract: No abstract text available
Text: IRFPC50LC_RC, SiHFPC50LC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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IRFPC50LC
SiHFPC50LC
AN609,
06-Jul-10
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Untitled
Abstract: No abstract text available
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFPC50LC,
SiHFPC50LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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