IRFP350LC
Abstract: No abstract text available
Text: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
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IRFP350LC,
SiHFP350LC
O-247
18-Jul-08
IRFP350LC
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IRFP350
Abstract: SiHFP350 IRFP350PBF
Text: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP350,
SiHFP350
O-247AC
O-220AB
O-247AC
O-218
11-Mar-11
IRFP350
IRFP350PBF
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Untitled
Abstract: No abstract text available
Text: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP350,
SiHFP350
O-247AC
O-220AB
O-247AC
O-218
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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IRFP350
Abstract: No abstract text available
Text: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP350,
SiHFP350
O-247
O-220
12-Mar-07
IRFP350
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Untitled
Abstract: No abstract text available
Text: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP350,
SiHFP350
2002/95/EC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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IRFP350LC,
SiHFP350LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFP350LC
Abstract: No abstract text available
Text: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
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IRFP350LC,
SiHFP350LC
O-247
18-Jul-08
IRFP350LC
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IRFP350
Abstract: SiHFP350
Text: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP350,
SiHFP350
O-247
O-220
O-218
18-Jul-08
IRFP350
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Untitled
Abstract: No abstract text available
Text: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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IRFP350LC,
SiHFP350LC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFP350LC_RC, SiHFP350LC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFP350LC
SiHFP350LC
AN609,
18-Jun-10
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IRFP350LC
Abstract: No abstract text available
Text: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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IRFP350LC,
SiHFP350LC
O-247AC
11-Mar-11
IRFP350LC
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Untitled
Abstract: No abstract text available
Text: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP350,
SiHFP350
2002/95/EC
O-247AC
O-220AB
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
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IRFP350LC,
SiHFP350LC
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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IRFP350LC,
SiHFP350LC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP350,
SiHFP350
O-247AC
O-220AB
O-247AC
O-218
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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irfp35
Abstract: No abstract text available
Text: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP350,
SiHFP350
2002/95/EC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irfp35
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Untitled
Abstract: No abstract text available
Text: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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IRFP350LC,
SiHFP350LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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IRFP350LC,
SiHFP350LC
2002/95/EC
11-Mar-11
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