Untitled
Abstract: No abstract text available
Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110
|
Original
|
PDF
|
IRFPE50,
SiHFPE50
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
91248
Abstract: No abstract text available
Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110
|
Original
|
PDF
|
IRFPE50,
SiHFPE50
2002/95/EC
O-247AC
O-247AC
11-Mar-11
91248
|
IRFPE50
Abstract: SiHFPE50 IRFPE50PBF
Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110
|
Original
|
PDF
|
IRFPE50,
SiHFPE50
2002/95/EC
O-247AC
11-Mar-11
IRFPE50
IRFPE50PBF
|
IRFPE50
Abstract: 78A31
Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110 • Ease of Paralleling Qgd (nC)
|
Original
|
PDF
|
IRFPE50,
SiHFPE50
O-247
O-247
12-Mar-07
IRFPE50
78A31
|
Untitled
Abstract: No abstract text available
Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110
|
Original
|
PDF
|
IRFPE50,
SiHFPE50
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
IRFPE50
Abstract: SiHFPE50 47 AB IRFPE50PBF
Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110 • Ease of Paralleling Qgd (nC)
|
Original
|
PDF
|
IRFPE50,
SiHFPE50
O-247
O-247
18-Jul-08
IRFPE50
47 AB
IRFPE50PBF
|
IRFPE50
Abstract: No abstract text available
Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110
|
Original
|
PDF
|
IRFPE50,
SiHFPE50
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFPE50
|
Untitled
Abstract: No abstract text available
Text: IRFPE50_RC, SiHFPE50_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
IRFPE50
SiHFPE50
AN609,
07-Jul-10
|
Untitled
Abstract: No abstract text available
Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110
|
Original
|
PDF
|
IRFPE50,
SiHFPE50
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|