Untitled
Abstract: No abstract text available
Text: FO-55116-C 11 12 10 9 8 7 6 5 2 3 4 HONEYWELL PART NUMBER 1 REV DOCUMENT E 0086508 WPMM SERIES CHART 1 CHANGED BY VKR CHECK 13FEB12 CMH WPMM H H 1 ANTENNA TYPE CODE RF CODE SOFTWARE VERSION CODE A VERSION 1 2.4 GHz; IEEE 802.15.4 G F NO ANTENNA; RP-SMA CONNECTOR JACK
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FO-55116-C
13FEB12
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Untitled
Abstract: No abstract text available
Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification
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SiRA00DP
2002/95/EC
SiRA00DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM60N10-17 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 • TrenchFET Power MOSFETS RDS(on) () ID (A) 0.0165 at VGS = 10 V 60 0.0190 at VGS = 6 V 56 • 175 °C Junction Temperature • • • • Low Thermal Resistance Package
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SUM60N10-17
2002/95/EC
O-263
SUM60N10-17-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . I INNOVAT AND TEC O L OGY LPS1100 N HN Power Thick Film Resistor O 19 62-2012 Resistors - High Power up to 1100 W High-Power Thick Film Resistor Heatsink Mounting KEY BENEFITS • • • • • • • High power up to 1100 W at 25 °C on heatsink
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LPS1100
2011/65/EU
LPS1100
VMN-PT0311-1202
mm/100
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Untitled
Abstract: No abstract text available
Text: Si1972DH Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 VDS (V) 30 Qg (Typ.) 0.91 nC • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS)
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Si1972DH
2002/95/EC
OT-363
SC-70
Si1972DH-T1-E3
Si1972DH-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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SiRA04DP
2002/95/EC
SiRA04DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiSA12DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • Switch Mode Power Supplies PowerPAK 1212-8
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SiSA12DN
2002/95/EC
SiSA12DN-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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SiRA06DP
2002/95/EC
SiRA06DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR401DP Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)d 0.0032 at VGS = - 10 V - 50 0.0042 at VGS = - 4.5 V - 50 0.0077 at VGS = - 2.5 V - 50 Qg (Typ.) 97 nC APPLICATIONS PowerPAK SO-8
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SiR401DP
2002/95/EC
SiR401DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PowerPAK
Abstract: No abstract text available
Text: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8
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SiRA12DP
2002/95/EC
SiRA12DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
PowerPAK
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Untitled
Abstract: No abstract text available
Text: SUD50N03-12P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 a ID (A) 0.0120 at VGS = 10 V 17.5 0.0175 at VGS = 4.5 V 14.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SUD50N03-12P
2002/95/EC
O-252
SUD50N03-12P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM60N10-17 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 • TrenchFET Power MOSFETS RDS(on) () ID (A) 0.0165 at VGS = 10 V 60 0.0190 at VGS = 6 V 56 • 175 °C Junction Temperature • • • • Low Thermal Resistance Package
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SUM60N10-17
2002/95/EC
O-263
SUM60N10-17-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si1972DH Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 VDS (V) 30 Qg (Typ.) 0.91 nC • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS)
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PDF
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Si1972DH
2002/95/EC
OT-363
SC-70
Si1972DH-T1-E3
Si1972DH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: New Product SiR401DP Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)d 0.0032 at VGS = - 10 V - 50 0.0042 at VGS = - 4.5 V - 50 0.0077 at VGS = - 2.5 V - 50 Qg (Typ.) 97 nC APPLICATIONS PowerPAK SO-8
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SiR401DP
2002/95/EC
SiR401DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SUM90N10-8m2P
Abstract: SUM90N
Text: SUM90N10-8m2P Vishay Siliconix N Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 100 0.0082 at VGS = 10 V ID (A) 90 d Qg (Typ) 97 • • • • TrenchFET Power MOSFETS 175 °C Junction Temperature 100 % Rg and UIS Tested
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SUM90N10-8m2P
2002/95/EC
O-263
SUM90N10-8m2P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SUM90N10-8m2P
SUM90N
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6206a
Abstract: J-LINK GDB SERVER 20 pin JTAG CONNECTOR Atmel SAM-ICE
Text: AT91SAM-ICE . User Guide 6206C–ATARM–13-Feb-12 1-2 6206C–ATARM–13-Feb-12 AT91SAM-ICE User Guide Table of Contents Section 1 Introduction. 1-1
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AT91SAM-ICE
6206C
13-Feb-12
AT91SAM-ICE
6206a
J-LINK GDB SERVER
20 pin JTAG CONNECTOR
Atmel SAM-ICE
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SQ4946AEY Vishay Siliconix Dual N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SQ4946AEY
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8
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SiRA12DP
2002/95/EC
SiRA12DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiC402A, SiC402BCD Vishay Siliconix 10 A microBUCK SiC402A/B Integrated Buck Regulator with Programmable LDO DESCRIPTION FEATURES The Vishay Siliconix SiC402A/B an advanced stand-alone synchronous buck regulator featuring integrated power MOSFETs, bootstrap switch, and a programmable LDO in a
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SiC402A
SiC402BCD
SiC402A/B
MLP55-32L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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SiRA04DP
2002/95/EC
SiRA04DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SiSA12DN
Abstract: No abstract text available
Text: New Product SiSA12DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • Switch Mode Power Supplies PowerPAK 1212-8
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SiSA12DN
2002/95/EC
SiSA12DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: rwPU6U&ATUN 1 COPVWQHT - By - OIST ALL HkJHIU HLÜUAtb. ES REVISIONS 00 — vescopm— E8 0 .9 2 ± 0 .0 8 BATE NM I A W 13FEB12 J.H S.Y fxTxxl A P IA- |-^|0q.i | a D|b (D| 4 RELEASED PER E C R -1 2 -0 0 2 4 4 8 P LC 2 .5 ± 0 .0 8 D IA -0-|0O.l<P|X|Y|
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13FEB12
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Untitled
Abstract: No abstract text available
Text: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - - REVISIO N S RESERVED. - LTR J2 D 2 REVISED PER DATE E C O - 12 - 0 0 2 6 9 0 13FEB12 DWN A PVD KH DR D 1 / D E S C R IP T IO N WIRE INSULATION
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13FEB12
13FEB
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G S 3 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By 2 P U B L IC A T IO N R IG H TS R E V IS IO N S RESERVED. G - o: LTR E3 D E S C R IP T IO N R EVISED PER DATE E C O - 12 - 0 0 2 6 9 2 13FEB12 DWN A PVD KH DR D D BODY
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13FEB12
E66717
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