Untitled
Abstract: No abstract text available
Text: Crystals EK Typical Applications Telecommunications, industrial, 6.0 x 3.5, leadless ceramic package , seam sealed Features Enclosure all units in mm 13.000 MHz to 60.000 MHz In MHz Frequency range Standard frequencies 14.318180 14.745600 15.000000 16.000000
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D-74924
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Untitled
Abstract: No abstract text available
Text: Crystals EK Typical Applications Telecommunications, industrial, 6.0 x 3.5, leadless ceramic package , seam sealed Features Enclosure all units in mm 13.000 MHz to 60.000 MHz In MHz Frequency range Standard frequencies 14.318180 14.745600 15.000000 16.000000
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D-74924
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XTAL 16.000 CERAMIC
Abstract: GGG 60
Text: Quartz Crystal Units 53SMX B CUSTOM-DESIGNED HIGH SPEC SMD CRYSTALS 53SMX(B) SPECIFICATIONS 1. Package type 2. Frequency range 3. Frequency tolerance XTAL Actual Size 53SMX(B) 10.000 MHz to 270.000 MHz O : ±10 ppm at ＋25˚C ±3˚C Q : ±15 ppm at ＋25˚C ±3˚C
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53SMX
3000pcs
1000pcs)
XTAL 16.000 CERAMIC
GGG 60
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42SMX
Abstract: No abstract text available
Text: Quartz Crystal Units 42SMX CUSTOM-DESIGNED HIGH SPEC SMD CRYSTALS 42SMX 42SMX 12.000 MHz to 50.000 MHz O : ±10 ppm at ＋25˚C ±3˚C Q : ±15 ppm at ＋25˚C ±3˚C R : ±20 ppm at ＋25˚C ±3˚C See table below 1. Package type 2. Frequency range 3. Frequency tolerance
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42SMX
3000pcs
1000pcs)
42SMX
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OCXO mti 220
Abstract: 220-0103 220-0116 ocxo 10MHz 12v ocxo mti mti ocxo MTI-Milliren Technologies
Text: 220 • 221 Series OCXO - Hermetically Sealed 16-Pin DIP & SMT Description The 220 Series 16-Pin DIP OCXO is available with an AT or SC cut crystal. Housed in a hermetically sealed package that measures only 0.975"L x 0.800"W x 0.500"H 24.8 x 20.3 x 12.7mm , this series is offered as
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16-Pin
0E-08
-155dBc/Hz.
20E-06
00E-07
00E-06
OCXO mti 220
220-0103
220-0116
ocxo 10MHz 12v
ocxo mti
mti ocxo
MTI-Milliren Technologies
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Untitled
Abstract: No abstract text available
Text: FHF1 The Communications Edge Advanced Product Information High Dynamic Range FET Product Features • 39 dBm Output IP3 • 2.4 dB Noise Figure • 12 dB Gain • 21 dBm P1dB • 3-6 GHz Bandwidth • MTTF >100 Years • SOT-89 Surface Mount Package Functional Diagram
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OT-89
OT-89.
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: FHF1 The Communications Edge Advanced Product Information High Dynamic Range FET Product Features • 39 dBm Output IP3 • 2.0 dB Noise Figure • 12 dB Gain • 21 dBm P1dB • 3-6 GHz Bandwidth • MTTF >100 Years • SOT-89 Surface Mount Package Functional Diagram
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OT-89
OT-89.
1-800-WJ1-4401
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High Dynamic Range FET sot-89
Abstract: No abstract text available
Text: The Communications Edge TM FHF1 High Dynamic Range FET The Communications Ed • Product Features • • • • • • • 50 – 3000 MHz +39 dBm Output IP3 2.4 dB Noise Figure +21 dBm P1dB Single or Dual Supply Operation MTBF>100 Years SOT 89 SMT Package
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OT-89.
1-800-WJ1-4401
High Dynamic Range FET sot-89
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50 85300
Abstract: High Dynamic Range FET sot-89
Text: FHF1 The Wireless Edge Advanced Product Information High Dynamic Range FET Product Features • 39 dBm Output IP3 • 2.4 dB Noise Figure • 12 dB Gain • 21 dBm P1dB • 3-6 GHz Bandwidth • MTTF >100 Years • SOT-89 Surface Mount Package Product Description
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OT-89
OT-89.
1-800-WJ1-4401
50 85300
High Dynamic Range FET sot-89
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High Dynamic Range FET sot-89
Abstract: No abstract text available
Text: FHF1 The Communications Edge Advanced Product Information High Dynamic Range FET Product Features • 39 dBm Output IP3 • 2.4 dB Noise Figure • 12 dB Gain • 21 dBm P1dB • 3-6 GHz Bandwidth • MTTF >100 Years • SOT-89 Surface Mount Package Functional Diagram
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OT-89
OT-89.
1-800-WJ1-4401
High Dynamic Range FET sot-89
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07882
Abstract: NF 817
Text: FHF1 The Communications Edge Advanced Product Information High Dynamic Range FET Product Features • 3000-6000 MHz Bandwidth • +39 dBm Output IP3 • 2.4 dB Noise Figure • +21 dBm P1dB • Single or Dual Supply Operation • MTBF >100 Years • SOT-89 SMT Package
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OT-89
OT-89.
1-800-WJ1-4401
07882
NF 817
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FPD200P70
Abstract: transistor marking code 1325 RO29 "IPC 1752" gold L130
Text: FPD200P70 Data sheet v4.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:
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FPD200P70
26GHz
FPD200P70
J-STD-020C,
transistor marking code 1325
RO29
"IPC 1752" gold
L130
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b 857 W3
Abstract: fpd200p70 transistor marking code 1325 18GHZ TL11 TL22 VG07 filtronic Solid State
Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT PACKAGE FEATURES: • • • • • • Data sheet v2.3 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS GENERAL DESCRIPTION:
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FPD200P70
FPD200P70
26GHz
85GHZ
18GHZ
b 857 W3
transistor marking code 1325
18GHZ
TL11
TL22
VG07
filtronic Solid State
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Untitled
Abstract: No abstract text available
Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • Data sheet v2.2 PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:
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FPD200P70
FPD200P70
26GHz
85GHZ
18GHZ
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PICO Electronics
Abstract: FMX-325 16.000m 16000M
Text: C A L I B E R FMX-325 Series Metal Lid, Seam Weld Lead-Free RoHS Compliant Electronics Inc. 3.2X2.5X0.65mm Surface Mount Crystal PART NUMBERING GUIDE Environmental/Mechanical Specifications on page F5 FMX - 325 E G 20 C 1 - 29.4912MHz Package 3.2X2.5X.75mm max. ht. / Seam Weld (Metal Lid Package)
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FMX-325
4912MHz
10ppm
15ppm
20ppm
30ppm
50ppm
15ppm
PICO Electronics
16.000m
16000M
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MTF32
Abstract: MMTF32 HE38 hooray HE15 MMTF-32
Text: HEC CYCLINDRICAL CRYSTAL / WATCH CRYSTAL HEC offers the industry standard tuning fork watch crystal and tubular AT strip crystal, with many package options and encased in a compact package. PART NUMBERING GUIDE: For 32.768 kHz: Part Number - Capacitance Load
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HE26-6PF
MMTF-32-6PF
HE38-20
00M-20PF
MTF-32-20
0M-20PF
MTF-32
MMTF-32
MMTF-32S
MTF32
MMTF32
HE38
hooray
HE15
MMTF-32
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Untitled
Abstract: No abstract text available
Text: PETERMANN-TECHNIK GmbH Lechwiesenstr. 13 D-86899 Landsberg am Lech Fon: +49/8191/305395 Fax: +49/8191/305397 www.petermann-technik.com info@petermann-technik.com ISO 9001:2008 THT ZTA SERIES CERAMIC RESONATORS FEATURES RoHS-2 2011/65/EU compliant
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D-86899
2011/65/EU
ZTA-13
000MT-B0
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Untitled
Abstract: No abstract text available
Text: C A L I B E R FMX-325 Series Metal Lid, Seam Weld Lead-Free RoHS Compliant Electronics Inc. 3.2X2.5X0.65mm Surface Mount Crystal PART NUMBERING GUIDE Environmental/Mechanical Specifications on page F5 FMX - 325 E G 20 C 1 - 29.4912MHz Package 3.2X2.5X.75mm max. ht. / Seam Weld (Metal Lid Package)
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FMX-325
4912MHz
10ppm
15ppm
20ppm
30ppm
50ppm
15ppm
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FPD200P70
Abstract: TL11 TL22 l420 FPD200P70SR
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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FPD200P70
FPD200P70
25mmx200mm
20dBm
26GHz
15GHz
FPD200P70-AJ
TL11
TL22
l420
FPD200P70SR
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Untitled
Abstract: No abstract text available
Text: PETERMANN-TECHNIK GmbH Lechwiesenstr. 13 D-86899 Landsberg am Lech Fon: +49/8191/305395 Fax: +49/8191/305397 www.petermann-technik.com info@petermann-technik.com ISO 9001:2008 THT ZTT SERIES CERAMIC RESONATORS FEATURES RoHS-2 2011/65/EU compliant
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D-86899
2011/65/EU
ZTA-13
000MT-B0
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FPD200P70
Abstract: No abstract text available
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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FPD200P70
FPD200P70
25mmx200mm
26GHz
20dBm
15GHz
EB200P70-AJ
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fpd200p70
Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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FPD200P70
FPD200P70
25mmx200mm
26GHz
20dBm
15GHz
EB200P70-AJ
w65 transistor
FPD200P70SR
TL11
TL22
"IPC 1752" gold
8GH transistor
L30 type RF microwave power transistor
FPD200P70SB
3400 transistor
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Untitled
Abstract: No abstract text available
Text: * A i S » ? Crystal Unit KSS CX-4025S B lu e to o th ^ • U- KU7 . 7 ° / SMD • ^ fH /F e a tu re s • Bluetooth™MtSSMD • 'M Z ■ M B '1? < X (4.0 2.5 x x 0.75 mm) • izy s. "j • >J 7 a - f t p s • For Bluetooth™ • Compact -thin (size: 4.0 x 2.5 x 0.75 mm)
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CX-4025S
CX-4025.
12-32MHZ
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Untitled
Abstract: No abstract text available
Text: Features and Benefits Electrical • ■ ■ ■ Voltage: 350V Current: 3.0A Contact Resistance: 2 0 m ft max. Insulation Resistance: 1000 M ii min. Sizes 10 to 64 circuits Contact and plating orientation according to DIN 41651 Stackable end-to-end Meets HE 13/14 specification
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PS-99020-0001
Ta90152-3340
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