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    EDI8L24129V

    Abstract: No abstract text available
    Text: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution


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    PDF EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 EDI8L24129V DSP5630x 21060L 21062L EDI8L24129V,

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,


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    PDF EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 DSP5630x 21060L 21062L EDI8L24129V,

    DSP5600x

    Abstract: MO-163
    Text: EDI8L24128C 128Kx24 Asynchronous SR AM, 5V SRAM, FEATURES DESCRIPTION n 128Kx24 bit CMOS Static n Random Access Memory Array The EDI8L24128CxxBC is a 5V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 12 to 15ns access times, x24 width


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    PDF EDI8L24128C 128Kx24 EDI8L24128CxxBC 128Kx8 EDI8L2418C DSP5600x MO-163 EDI8L24128C12BC MO-163

    EDI8L24128C

    Abstract: No abstract text available
    Text: White Electronic Designs EDI8L24128C 128Kx24 Asynchronous SRAM, 5V FEATURES DESCRIPTION 128Kx24 bit CMOS Static Random Access Memory Array Fast Access Times: 12 and 15ns Master Output Enable and Write Control TTL Compatible Inputs and Outputs Fully Static, No Clocks


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    PDF EDI8L24128C 128Kx24 MO-163) DSP5600xTM EDI8L24128CxxBC 128Kx8 EDI8L2418C MO-163 EDI8L24128C

    DSP5630x

    Abstract: p 602 EDI8L24129V
    Text: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,


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    PDF EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 DSP5630x 21060L 21062L EDI8L24129V, DSP5630x p 602 EDI8L24129V

    EDI8L24128C

    Abstract: No abstract text available
    Text: EDI8L24128C White Electronic Designs 128Kx24 Asynchronous SRAM, 5V FEATURES DESCRIPTION  128Kx24 bit CMOS Static The EDI8L24128CxxBC is a 5V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 12 to 15ns access times, x24


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    PDF EDI8L24128C 128Kx24 EDI8L24128CxxBC 128Kx8 EDI8L2418C DSP5600x MO-163) MO-163 EDI8L24128C

    7665

    Abstract: MO-47AE
    Text: EDI8L24128V 128Kx24 SRAM 3.3 Volt ADVANCED 128Kx24 CMOS High Speed Static RAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 12 and 15ns • Individual Byte Enables • User Configurable Organization with Minimal Additional Logic


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    PDF EDI8L24128V 128Kx24 MO-47AE) EDI8L24128V no8V15AC MO-47AE 7665 MO-47AE

    Untitled

    Abstract: No abstract text available
    Text: EDI8F24128C 128Kx24 SRAM Module 128Kx24 Static RAM CMOS, High Speed Module Features The EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is constructed from three 128Kx8 Static RAMs in SOJ packages on an epoxy laminate FR4 board.


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    PDF EDI8F24128C 128Kx24 EDI8F24128C 128Kx8 EDI8F24128C20MZC EDI8F24128C25MZC EDI8F24128C35MZC 01581USA

    truth table Static Random Access Memory SRAM

    Abstract: EDI8L24128C MO-47AE
    Text: EDI8L24128C 128Kx24 SRAM Module ADVANCED 128Kx24 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Random Access Memory Array • Fast Access Times: 15, 17, and 20 • Individual Byte Enables • User Configurable Organization with Minimal Additional Logic


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    PDF EDI8L24128C 128Kx24 128Kx32 MO-47AE) EDI8L24128C EDI8L24128C20AC EDI8L24128C15AC EDI8L24128C17AC truth table Static Random Access Memory SRAM MO-47AE

    Untitled

    Abstract: No abstract text available
    Text: EDI8L24129V White Electronic Designs 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V


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    PDF EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 DSP5630x 21060L 21062L EDI8L24129V,

    Untitled

    Abstract: No abstract text available
    Text: ^ ED I Electronic D esleís lr>c. EDI8F24128C High Speed Three Megabit SRAM Module 128Kx24 Static RAM CMOS, High Speed Module IP IH IiU iD lM flP Features The ED I8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is


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    PDF EDI8F24128C 128Kx24 I8F24128C 128Kx8 EDI8F24128C JT/77L EDI8F24128C25MZC EDI8F24128C30MZC EDI8F24128C35MZC

    Untitled

    Abstract: No abstract text available
    Text: □PM D PS16616 7 Dense-Pac Microsystems. Inc. 256KX1/128KX2 C M O S SRAM MODULE O NOT RECOMENDED FOR NEW DESIGNS D E SC R IP T IO N : The D P S1 6 6 1 6 7 is a 256K X 1 or 128KX2 bit Static Random Access M em ory SR A M fabricated using sixteen 16KX1 C M O S SRAM s. The memory utilizes


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    PDF PS16616 256KX1/128KX2 128KX2 16KX1 256KX1

    Untitled

    Abstract: No abstract text available
    Text: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129\taBC is a 3.3V, three megabit SRAM 128Kx24 bit CMOS Static Random Access Memory Array constructed with three 128Kx8 die mounted on a multi­


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    PDF I8L24129V 128KX24 128Kx24 EDI8L24129\taBC 128Kx8 EDI8L24129V DSP5630x 21060L 21062L

    Untitled

    Abstract: No abstract text available
    Text: WDI EDI8L24128V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC ADVANCED 128Kx24 CMOS High Speed Static RAM F e a tu re s The EDI8L24128V is a high speed, 3.3 volt, high perform­ ance, three megabit density Static RAM organized as a 128Kx24 bit array. Fully asynchronous circuitry is used, requiring no clocks or


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    PDF EDI8L24128V 128KX24 MO-47AE) MO-47AE

    CU257

    Abstract: A639 3234J
    Text: ^EDI EDI8F24128C ELECTRONIC DESIGNS INC. High Speed Three Megabit SRAM Module 128Kx24 Static RAM CMOS, High Speed Module Features The EDI8F24128C is a high speed 3 megabit Static 128Kx24 bit CMOS Static RAM module organized as 128K words by 24 bits. This Random Access Memory


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    PDF 128Kx24 EDI8F24128C EDI8F24128C 128Kx8 A0-A16 DQ0-DQ23 DI8F24128C20MZC DI8F24128C25MZC CU257 A639 3234J

    Untitled

    Abstract: No abstract text available
    Text: DPS166167 □PM Dense-Pac Microsystems. Inc. ^ 256KX1/128KX2 CMOS SRAM MODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS166167 is a 256K X 1 or 128KX2 bit Static Random Access Memory SRAM fabricated using sixteen 16KX1 C M O S SRAMs. The memory utilizes


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    PDF DPS166167 256KX1/128KX2 DPS166167 128KX2 16KX1 S166167 125-C

    EI24

    Abstract: EI-24
    Text: EDI8F24128C W 3 X ELECTRONIC. DESIGNS, INC 128KX24 SRAM Module !28Kx24Static RAM CMOS, High SpeedModrfe Features TTie EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is 128Kx24 bit CMOS Static constructed from threel 28Kx8 Static RAMs in SOJ packages


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    PDF EDI8F24128C 128KX24 28Kx24Static EDI8F24128C 28Kx8 EDI8F24128C20MZC EDI8F24128C25MZC EDI8F24128C35MZC EI24 EI-24

    512KX24

    Abstract: 128KX24
    Text: ma DSP SOLUTIONS aSCTRONIC DÉSKSN& W C X24ASYNCHRONOUS FAMILY 128K AND 512Kx24 SV/3.3V EDI's x24 Asynchronous SRAM family is de­ signed in support of Analog Devices ADSP- * 2106x DSPs. The family includes densities of 128Kx24 and 5!2Kx24. The family of devices


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    PDF X24ASYNCHRONOUS 512Kx24 2106x 128Kx24 2Kx24. MO-47AE EDI8L24128CxxAC EDI8L24512CxxAC EDI8L24128VxxAC EDI8L24512VxxAC

    Untitled

    Abstract: No abstract text available
    Text: ^ E D I E D I 8 F 2 4 1 2 9 C Electronic Designs Inc. High Speed Three Megabit SRAM Module 128KX24 Static RAM CMOS, High Speed Module D P ÎF Û Ü M T D O M Features The EDI8F24129C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This


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    PDF EDI8F24129C 128KX24 EDI8F24129C 128Kx8 0001b

    DSP5630x

    Abstract: EDI8L24129V
    Text: ^EDI ED I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC Asynchronous, 3.3V, 128Kx24 SRAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 10,12, and 15ns • Master Output Enable and Write Control • TTL Compatible Inputs and Outputs


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    PDF EDI8L24129V 128KX24 MO-163) DSP5630xâ EDI8L24129VxxBC 128Kx8 EDI8L24129V10BC EDI8L24128V12BC DSP5630x EDI8L24129V

    truth table Static Random Access Memory SRAM

    Abstract: No abstract text available
    Text: ^EDI, EDI8F24128C 128Kx24 SRAM Module ELECTRONIC DESIGNS N C 128Kx24 Static RAM CMOS, High SpeedModule Features The EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is 128Kx24 bit CMOS Static constructed from three 128Kx8 Static RAMs in SOJ packages


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    PDF EDI8F24128C 128Kx24 EDI8F24128C 128Kx8 323Dim EDBF24128C truth table Static Random Access Memory SRAM

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8F24128C ELECTRONIC DESIGNS INC. • High Speed Three Megabit SRAM Module 128KX24 Static RAM CMOS, High Speed Module Features The EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is constructed from three 128Kx8 Static RAMs in


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    PDF EDI8F24128C 128KX24 EDI8F24128C 128Kx8 DQ8-DQ15 DQ16-DQ23 00D14MH EDI8F24128C20MZC EDI8F24128C25MZC

    Untitled

    Abstract: No abstract text available
    Text: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129VxxBC is a 3.3V, three m egabit SRAM 128Kx24 bit CMOS Static constructed with three 128Kx8 die mounted on a m ulti­ Random Access Memory Array


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    PDF I8L24129V 128KX24 128Kx24 EDI8L24129VxxBC 128Kx8 EDI8L24129V SP5630x EDI8L24129V15BI MO-163

    Untitled

    Abstract: No abstract text available
    Text: WEDl EDI8F24128C 128Kx24 SRAM Module ELECTRONIC DE9GNS. « C . 128KX24 Static RAM CMOS, High Speed Module Features The EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is constructed from three 128Kx8 Static RAMs in SOJ packages


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    PDF EDI8F24128C 128Kx24 EDI8F24128C 128Kx8 multi15 EDBF24128C