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    Untitled

    Abstract: No abstract text available
    Text: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129\taBC is a 3.3V, three megabit SRAM 128Kx24 bit CMOS Static Random Access Memory Array constructed with three 128Kx8 die mounted on a multi­


    OCR Scan     		PDF I8L24129V 128KX24 128Kx24 EDI8L24129\taBC 128Kx8 EDI8L24129V DSP5630x 21060L 21062L

    DSP5630x

    Abstract: EDI8L24129V
    Text: ^EDI ED I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC Asynchronous, 3.3V, 128Kx24 SRAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 10,12, and 15ns • Master Output Enable and Write Control • TTL Compatible Inputs and Outputs


    OCR Scan     		PDF EDI8L24129V 128KX24 MO-163) DSP5630xâ EDI8L24129VxxBC 128Kx8 EDI8L24129V10BC EDI8L24128V12BC DSP5630x EDI8L24129V

    Untitled

    Abstract: No abstract text available
    Text: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The I8L24129VxxBC is a 3.3V, three m egabit SRAM 128Kx24 bit CMOS Static constructed with three 128Kx8 die mounted on a m ulti­ Random Access Memory Array


    OCR Scan     		PDF I8L24129V 128KX24 128Kx24 EDI8L24129VxxBC 128Kx8 EDI8L24129V SP5630x EDI8L24129V15BI MO-163