Untitled
Abstract: No abstract text available
Text: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129VxxBC is a 3.3V, three m egabit SRAM 128Kx24 bit CMOS Static constructed with three 128Kx8 die mounted on a m ulti Random Access Memory Array
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I8L24129V
128KX24
128Kx24
EDI8L24129VxxBC
128Kx8
EDI8L24129V
SP5630x
EDI8L24129V15BI
MO-163
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SP5630
Abstract: No abstract text available
Text: ^EDI ED I8L24512V 512KX24 SRAM Module ELECTRONIC DESIGNS, INC Preliminary 512KX24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static The ED I8L24512V is a high speed, 3.3V, 12 m egabit DSP Memory Solution • Motorola DSP 5630x SRAM. The device is available w ith access tim es of 12,
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I8L24512V
512KX24
I8L24512V
5630x
ca-40
EDI8L24512V15AC
EDI8L24512V17AC
EDI8L24512V20AI
SP5630
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